Эта публикация цитируется в 2 статьях

Физика полупроводниковых приборов

InP/GaAsSb type-II DHBTs with GaAsSb/InGaAs superlattice-base and GaAsSb bulk-base structures

Jung-Hui Tsai^a, Wen-Shiung Lour^b, Der-Feng Guo^c, Wen-Chau Liu^d, Yi-Zhen Wu^a, Ying-Feng Dai<sup>a

a</sup> Department of Electronic Engineering, National Kaohsiung Normal University, Kaohsiung, Taiwan
^b Department of Electrical Engineering, National Taiwan Ocean University, Keelung, Taiwan
^c Department of Electronic Engineering, Air Force Academy, Kaohsiung, Taiwan
^d Institude of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University, Tainan, Taiwan

Аннотация: High-performance InP/GaAsSb double heterojunction bipolar transistor (DHBT) employing GaAsSb/InGaAs superlattice-base structure is demonstrated and compared with GaAsSb bulk-base structure by two-dimensional simulation analysis. The proposed device exhibits a higher current gain of 257 than the conventional InP/GaAsSb type-II DHBT with a lower current gain of 180, attributed to the tynneling behavior of minority carriers in the GaAsSb/InGaAs superlattice-base region under large forward base-emitter bias. In addition, a larger unity gain cutoff frequency of 19.1 GHz is botained for the superlattice-base device than that of 17.2 GHz for the bulk-base device.

Поступила в редакцию: 27.01.2009
Принята в печать: 29.01.2009

Язык публикации: английский

 Англоязычная версия: Semiconductors, 2010, 44:8, 1096–1100

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