Эта публикация цитируется в 3 статьях

Физика полупроводниковых приборов

InGaP/InGaAs Doped-Channel Direct-Coupled Field-Effect Transistors Logic with Low Supply Voltage

Jung-Hui Tsai^a, Wen-Shiung Lour^b, Tzu-Yen Weng^c, Chien-Ming Li<sup>c

a</sup> Department of Electronic Engineering, National Kaohsiung Normal University, Kaohsiung 802, Taiwan
^b Department of Electrical Engineering, National Taiwan Ocean University, Keelung, Taiwan
^c Department of Physics, National Kaohsiung Normal University, Kaohsiung 802, Taiwan

Аннотация: InGaP/InGaAs doped-channel direct-coupled field-effect transistor logic (DCFL) with relatively low supple voltage is demonstrated by two-dimensional analysis. In the integrated enhancement/depletion-mode transistors, subband and two-dimensional electron gas (2DEG) are formed in the InGaAs strain channels, which substantially increase the channel concentration and decrease the drain-to-source saturation voltage. The integrated devices show high turn-on voltage, high transconductance, broad gate voltage swing, and excellent high frequency performance, simultaneously. Furthermore, the integrated devices exhibit large noise margins for DCFL application with low supply voltage of 1.5 V attributed from the relatively small saturation voltages of the studied integrated devices.

Поступила в редакцию: 02.06.2009
Принята в печать: 12.06.2009

Язык публикации: английский

 Англоязычная версия: Semiconductors, 2010, 44:2, 223–227

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