Эта публикация цитируется в 2 статьях

Полупроводниковые структуры, низкоразмерные системы, квантовые явления

Electrical characteristics of Au/$n$-GaAs structures with thin and thick SiO$_2$ dielectric layer

H. Altuntas^a, S. Corekci^b, S. Ozcelik^c, Ş. Altindal^c, M. K. Ozturk<sup>c

a</sup> Department of Physics, Faculty of Sciences, Çankiri Karatekin Üniversitesi, Çankiri, Turkey
^b Department of Physics, Faculty of Arts and Sciences, Kirklareli University, 39000 Ankara, Turkey
^c Department of Physics, Faculty of Arts and Sciences, Gazi University, 06500 Ankara, Turkey

Аннотация: The aim of this study, to explain effects of the SiO$_2$ insulator layer thickness on the electrical properties of Au/$n$-GaAs Shottky barrier diodes (SBDs). Thin (60 $\mathring{\mathrm{A}}$) and thick (250 $\mathring{\mathrm{A}}$) SiO$_2$ insulator layers were deposited on $n$-type GaAs substrates using the plasma enhanced chemical vapour deposition technique. The current-voltage (I–V) and capacitance-voltage (C–V) characteristics have been carried out at room temperature. The main electrical parameters, such as ideality factor $(n)$, zero-bias barrier height $(\phi_{Bo})$, series resistance $(R_s)$, leakage current, and interface states $(N_{ss})$ for Au/SiO$_2$/$n$-GaAs SBDs have been investigated. Surface morphologies of the SiO$_2$ dielectric layer was analyzed using atomic force microscopy. The results show that SiO$_2$ insulator layer thickness very affects the main electrical parameters. Au/$n$-GaAs SBDs with thick SiO$_2$ insulator layer have low leakage current level, small ideality factor, and low interface states. Thus, Au/$n$-GaAs SBDs with thick SiO$_2$ insulator layer shows better diode characteristics than other.

Язык публикации: английский

 Англоязычная версия: Semiconductors, 2011, 45:10, 1286–1290

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