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Электронные свойства полупроводников

Effect of pressure and temperature on electronic structure of GaN in the zinc-blende structure

A. R. Degheidy, E. B. Elkenany

Department of Physics, Faculty of Science, Mansoura University, 35516 Mansoura, Egypt

Аннотация: The effect of the hydrostatic pressure and the temperature on the electronic structure in GaN semiconductor has been calculated using the local empirical pseudopotential method. The variation of the direct and indirect energy gaps with the pressure up to 120 kbar and with the temperature up to 500 K has been done. The calculated fundamental energy gap at different pressures and different temperatures are calculated and compared with the available experimental data which show excellent agreement. The effect of pressure and temperature on the refractive index of the considered materials has also been studied.

Поступила в редакцию: 12.01.2011
Принята в печать: 22.03.2011

Язык публикации: английский

 Англоязычная версия: Semiconductors, 2011, 45:10, 1251–1257

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