Эта публикация цитируется в 25 статьях

Физика полупроводниковых приборов

Role of nanoscale AlN and InN for the microwave characteristics of AlGaN/(Al,In)N/GaN-based HEMT

T. R. Lenka, A. K. Panda

National Institute of Science and Technology, Palur Hills, Berhampur-761008, Odisha, India

Аннотация: A new AlGaN/GaN-based high electron mobility transistor (HEMT) is proposed and its microwacharacteristics are discussed by introducing a nanoscale AlN or InN layer to study the potential improvement in their high frequency performance. The 2DEG transport mechanism including various subband calculations for both (Al,In)N-based HEMTs are also discussed in the paper. Apart from direct current characteristics of the proposed HEMT, various microwave parameters such as transconductance, unit current gain ($h_{21}$ = 1) cut-off frequency $(f_t)$, high power-gain frequency $(f_{\mathrm{max}})$. Masons available/stable gain and masons unilateral gain are also discussed for both devices to understand its suitable deployment in microwave frequency range.

Поступила в редакцию: 11.02.2011
Принята в печать: 14.02.2011

Язык публикации: английский

 Англоязычная версия: Semiconductors, 2011, 45:9, 1211–1218

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