Эта публикация цитируется в 8 статьях

Физика полупроводниковых приборов

An accurate polynomial-based analytical charge control model for AlGaN/GaN HEMT

Jinrong Pu, Jiuxun Sun, Da Zhang

Department of Applied Physics, University of Electronic Science and Technology of China, 610054 Chengdu, People’s Republic of China

Аннотация: A new nonlinear expression of Fermi-level variation with two-dimensional electron gas density in a high electron mobility has been proposed. It was found that our expression has a better fit with the numerical results. And, an analytical expression for $n_s$ in terms of the applied gate voltage is developed. Comparing with other previous approximations, the solutions of our expression has a better agreement with the exact numerical results over the entire range of interest. Besides, the solutions of our expression of $n_s$ versus $V_G$ are compared with the experimental data and shown to be in good agreement over a wide range of bias conditions.

Поступила в редакцию: 13.01.2011
Принята в печать: 14.02.2011

Язык публикации: английский

 Англоязычная версия: Semiconductors, 2011, 45:9, 1205–1210

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