Эта публикация цитируется в 77 статьях

Физика полупроводниковых приборов

Characteristics Study of 2DEG Transport Properties of AlGaN/GaN and AlGaAs/GaAs-based HEMT

T. R. Lenka, A. K. Panda

National Institute of Science and Technology, Palur Hills, Berhampur-761008, Odisha, India

Аннотация: Growth of wide bandgap material over narrow bandgap material, results into a two dimensional electron gas (2DEG) at the heterointerface due to the conduction band discontinuity. In this paper the 2DEG transport properties of AlGaN/GaN-based high electron mobility transistor (HEMT) is discussed and its effect on various characteristics such as 2DEG density, C-V characteristics and Sheet resistances for different mole fractions are presented. The obtained results are also compared with AlGaAs/GaAs-based HEMT for the same structural parameter as like AlGaN/GaN-based HEMT. The calculated results of electron sheet concentration as a function of the Al mole fraction are in excellent agreement with some experimental data available in the literature.

Поступила в редакцию: 05.08.2010
Принята в печать: 02.11.2010

Язык публикации: английский

 Англоязычная версия: Semiconductors, 2011, 45:5, 650–656

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