Эта публикация цитируется в 3 статьях

Физика полупроводниковых приборов

A New InGaP/GaAs Tunneling Heterostructure–Emitter Bipolar Transistor (T-HEBT)

Jung-Hui Tsai^a, Ching-Sung Lee^b, Wen-Shiung Lour^c, Yung-Chun Ma^a, Sheng-Shiun Ye<sup>a

a</sup> Department of Electronic Engineering, National Kaohsiung Normal University, 802 Kaohsiung, Taiwan
^b Department of Electronic Engineering, Feng Chia University, 100 Taichung, Taiwan
^c Department of Electrical Engineering, National Taiwan Ocean University, Keelung, Taiwan

Аннотация: Excellent characteristics of an InGaP/GaAs tunneling heterostructure-emitter bipolar transistor (T-HEBT) are first demonstrated. The insertion of a thin $n$-GaAs emitter layer between tynneling confinement and base layers effectivelty eliminates the potential spike at base-emitter junction and reduces the collector-emitter offset voltage, while the thin InGaP tunneling confinement layer is employed to reduce the transporting time across emitter region for electrons and maintain the good confinement effect for holes. Experimentally, the studied T-HEBN exhibits a maximum current gain of 285, a relatively low offset voltage of 40 mW, and a current-gain cutoff frequency of 26.4 GHz.

Поступила в редакцию: 25.10.2010
Принята в печать: 29.10.2010

Язык публикации: английский

 Англоязычная версия: Semiconductors, 2011, 45:5, 646–649

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