Эта публикация цитируется в 9 статьях

Неэлектронные свойства полупроводников (атомная структура, диффузия)

Valence band structure of binary chalcogenide vitreous semiconductors by high-resolution XPS

S. Kozyukhin^a, R. Golovchak^b, A. Kovalskiy^c, O. Shpotyuk^b, H. Jain<sup>c

a</sup> Institute of General and Inorganic Chemistry, Russian Academy of Science, 199991 Moscow, Russia
^b Lviv Scientific Research Institute of Materials of SRC "Carat", UA-79031 Lviv, Ukraine
^c Department of Materials Science and Engineering, Lehigh University, Bethlehem, PA 18015-3195, USA

Аннотация: High-resolution X-ray photoelectron spectroscopy (XPS) is used to study regularities in the formation of valence band electronic structure in binary As$_x$Se$_{100-x}$, As$_x$S$_{100-x}$, Ge$_x$Se$_{100-x}$ and Ge$_x$S$_{100-x}$ chalcogenide vitreous semiconductors. It is shown that the highest occupied energetic states in the valence band of these materials are formed by lone pair electrons of chalcogen atoms, which play dominant role in the formation of valence band electronic structure of chalcogen-rich glasses. A well-expressed contribution from chalcogen bonding $p$ electrons and more deep s orbitals are also recorded in the experimental valence band XPS spectra. Compositional dependences of the observed bands are qualitatively analyzed from structural and compositional points of view.

Поступила в редакцию: 14.09.2010
Принята в печать: 20.09.2010

Язык публикации: английский

 Англоязычная версия: Semiconductors, 2011, 45:4, 423–426

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