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Grain boundary related electrical transport in Al-rich Al$_x$Ga$_{1-x}$N layers grown by metal-organic chemical vapor deposition

A. Yildiz^ab, P. Tasli^c, B. Sarikavak^c, S. B. Lisesivdin^c, M. K. Ozturk^c, M. Kasap^c, S. Ozcelik^c, E. Ozbay<sup>d

a</sup> Department of Engineering Physics, Faculty of Engineering, Ankara University, 06100 Besevler, Ankara, Turkey
^b Department of Physics, Faculty of Science and Arts, Ahi Evran University, 40040 Kirsehir, Turkey
^c Department of Physics, Faculty of Science and Arts, Gazi University, Teknikokular, 06500 Ankara, Turkey
^d Bilkent University, Bilkent, 06800 Ankara, Turkey

Аннотация: Electrical transport data for Al-rich AlGaN layers grown by metal-organic chemical vapor deposition (MOCVD) are presented and analyzed in the temperature range 135–300 K. The temperature dependence of electrical conductivity indicated that conductivity in the films was controlled by potential barriers caused by carrier depletion at grain boundaries in the material. The Seto's grain boundary model provided a complete framework for understanding of the conductivity behavior. Various electrical parameters of the present samples such as grain boundary potential, donor concentration, surface trap density, and Debye screening length were extracted.

Поступила в редакцию: 16.03.2010
Принята в печать: 29.04.2010

Язык публикации: английский

 Англоязычная версия: Semiconductors, 2011, 45:1, 33–36

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