A. Fathalian, “The adsorption effect of C$_6$H$_5$ on density of states for double wall carbon nanotubes by tight binding model”, Физика и техника полупроводников, 2012, том 46, выпуск 6,страницы 788

Эта публикация цитируется в 1 статье

Полупроводниковые структуры, низкоразмерные системы, квантовые явления

The adsorption effect of C$_6$H$_5$ on density of states for double wall carbon nanotubes by tight binding model

A. Fathalian^abc

^a Department of Physics, Razi University, Kermanshah, Iran
^b Nano Science and Technology Research Center, Razi University, Kermanshah, Iran
^c Department of Nano Science, Institute for Studies in Theoretical Physics and Mathematics, Tehran, Iran

Аннотация: A theoretical approach based on a tight-binding model is developed to study the effects of the adsorption of finite concentrations of C$_6$H$_5$ gas molecules on double-walled carbon nanotube (DWCNT) electronic properties. To obtain proper hopping integrals and random on-site energies for the case of one molecule adsorption, the local density of states for various hopping integrals and random on-site energies are calculated. Since C$_6$H$_5$ molecule is a donor with respect to the carbon nanotubes and their states should appear near the conduction band of the system, effects of various hopping integral deviations and on-site energies for one molecule adsorption are considered to find proper hopping and on-site energies consistent with expected $n$-type semiconductor. We found that adsorption of C$_6$H$_5$ gas molecules could lead to a (8.0)@(20.0) DWCNT $n$-type semiconductor. The width of impurity adsorbed gas states in the density of states could be controlled by adsorbed gas concentration.

Поступила в редакцию: 14.11.2011
Принята в печать: 14.11.2011

Язык публикации: английский