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ЖУРНАЛЫ // Физика и техника полупроводников // Архив

Физика и техника полупроводников, 2012, том 46, выпуск 5, страницы 633–636 (Mi phts8233)

Эта публикация цитируется в 4 статьях

Электронные свойства полупроводников

CdSe semiconducting layers produced by pulse electrolysis

C. Mitzithra, S. Hamilakis, C. Kollia, Z. Loizos

School of Chemical Engineering, National Technical University of Athens, Zografou Campus 15 780, Greece

Аннотация: Thin films of CdSe semiconductors electrodeposited from acid aqueous electrolytes onto Ti substrates have been developed using periodically modified currents, such as pulse current. The products obtained were fully characterized and their photoelectric behavior was studied using a photoelectrochemical cell. All deposits obtained by pulse electrolysis exhibit some differences in their structure, surface morphology and photoelectric properties, depending on the imposed pulse current parameters such as pulse frequency and duty cycle. It was also found that increased photoelectrochemical efficiencies are observed to so higher pulse frequencies as more negative deposition potentials are applied and vice-versa.

Поступила в редакцию: 27.10.2011
Принята в печать: 10.11.2011

Язык публикации: английский


 Англоязычная версия: Semiconductors, 2012, 46:5, 615–618

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