Эта публикация цитируется в 3 статьях

Полупроводниковые структуры, низкоразмерные системы, квантовые явления

Enhancement of low temperature electron mobility due to an electric field in an InGaAs/InAlAs double quantum well structure

T. Sahu^a, S. Palo^b, P. K. Nayak^c, N. Sahoo<sup>d

a</sup> Department of Electronics and Communication Engineering, National Institute of Science and Technology, Berhampur-761 008, Odisha, India
^b Department of ECE, Kalam Institute of Technology, Berhampur, Odisha
^c Department of ECE, SMIT, Berhampur, Odisha
^d Department of Electronic Science, Berhampur University, Berhampur-760007, India

Аннотация: The effect of external electric field $F$ on multisubband electron mobility $\mu$ in an In$_{0.53}$Ga$_{0.47}$As/In$_{0.52}$Al$_{48}$As double quantum well structure is analyzed. We consider scatterings due to ionized impurities, interface roughness and alloy disorder to analyze $\mu$. The variation of scattering mechanisms as a function of $F$ for different structure parameters shows interesting results through intersubband interactions. For small well widths, the mobility is governed by interface roughness scattering. When two subbands are occupied, the effect of impurity scattering gets enhanced through intersubband interactions. Our results of enhancement in mobility as a function of $F$, can be utilized for low temperature devices.

Поступила в редакцию: 11.09.2013
Принята в печать: 20.02.2014

Язык публикации: английский

 Англоязычная версия: Semiconductors, 2014, 48:10, 1318–1323

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