Микро- и нанокристаллические, пористые, композитные полупроводники

Metal assisted chemical etching of silicon and solution synthesis of Cu$_2$O/Si radial nanowire array heterojunctions

L. Chetibi, D. Hamana, S. Achour

Laboratory of Advanced Materials Technology, Ecole Nationale Polytechnique de Constantine and Phases transformations Laboratory, University of Constantine 1, Algeria

Аннотация: Cu$_2$O/Si radial nanowire (NWs) array heterojunctions were prepared by depositing Cu$_2$O nanoparticles via chemical bath deposition on $n$-Si nanowire arrays that were fabricated by metal-assisted electroless etching. After 20 cycles of deposition, large numbers of Cu$_2$O nanoparticles with form shells that wrap the upper segment of each Si nanowire. This method of etching offers exceptional simplicity, flexibility, environmental friendliness, and scalability for the fabrication of three-dimensional silicon nanostructures with considerable depths, because of replacement of harsh oxidants such as H$_2$O$_2$ and AgNO$_3$.

Ключевые слова: Cu$_2$O/Si NWs heterojunctions, Cu$_2$O nanoparticles, metal-assisted electroless etching.

Поступила в редакцию: 15.03.2022
Исправленный вариант: 10.03.2023
Принята в печать: 10.03.2023

Язык публикации: английский