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КОНДЕНСИРОВАННОЕ СОСТОЯНИЕ
Metallization in the molten and solid state and phase diagrams
of the GeSe$_2$ and GeS$_2$ under high pressure
V. V. Brazhkina,
E. Bychkovb,
M. V. Kondrina a Institute for High Pressure Physics, Russian Academy of Sciences
b LPCA, UMR 8101 CNRS, Universite du Littoral
Аннотация:
We found that under high pressure, the GeSe
$_2$ and GeS
$_2$ melts pass into
the metallic state.
In the vicinity of the melting curves, their metallization begins at
$3.5$ and
$7$ GPa, respectively.
The position of the semiconductor – metal transition line on the phase diagram
for GeSe
$_2$ liquid is
established. The GeS
$_2$-II and GeSe
$_2$-III high-pressure crystalline
modifications are
semiconductors, whereas the GeSe
$_2$-III modification at pressures exceeding
$3.5$–
$4$ GPa is a metal
($\sigma\approx10^3\,\Omega^{-1}\cdot\text{cm}^{-1}$).
The
$P$,
$T$ phase diagrams for these compounds are constructed in the
pressure range up to
$10$ GPa. Metallization during the GeSe
$_2$-II–GeSe
$_2$-III
transition is evidently
responsible for the small jump of entropy and the corresponding almost vertical
slope of the transition line.
Поступила в редакцию: 20.08.2014
Язык публикации: английский
DOI:
10.7868/S0370274X14190072
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