Эта публикация цитируется в 10 статьях

КОНДЕНСИРОВАННОЕ СОСТОЯНИЕ

Engineering near-surface electron states in three-dimensional topological insulators

V. N. Men'shov^ab, V. V. Tugushev^cab, E. V. Chulkov<sup>db

a</sup> National Research Centre "Kurchatov Institute"
^b Tomsk State University
^c A. M. Prokhorov General Physics Institute, Russian Academy of Sciences, Moscow
^d Departamento de Física de Materiales, Facultad de Quimica, UPV/EHU, San Sebastian, Basque Country

Аннотация: Using the continual model of a semi-infinite three dimensional (3D) topological insulator (TI) we study the effect of the surface potential (SP) on the formation of helical topological states near the surface. The results reveal that spatial profile and spectrum of these states strongly depend on the SP type and strength. We pay special attention to the 3D TI substrate/non-magnetic insulating overlayer system to illustrate the principles of the topological near-surface states engineering.

Поступила в редакцию: 05.08.2013
Исправленный вариант: 03.10.2013

Язык публикации: английский

DOI: 10.7868/S0370274X13220050

 Англоязычная версия: Journal of Experimental and Theoretical Physics Letters, 2013, 98:10, 603–608

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