Графены

Sheet Resistance and Magnetoresistance in Polycrystalline CVD Graphenes

A. K. Fedotov^a, A. A. Kharchanka^a, U. E. Gumiennik^ab, J. A. Fedotova^a, Ali Arash Ronassi^c, A. S. Fedotov^de, S. L. Prischepa^fg, M. V. Chichkov^h, M. D. Malinkovich<sup>h

a</sup> Institute for Nuclear Problems of Belarusian State University, Belarus
^b AGH University of Science and Technology, Poland
^c Payaame Noor University in Borujerd, Iran
^d Belarusian State University, Belarus
^e University of Tyumen, Russia
^f Belarusian State University of Informatics and Radioelectronics, Belarus
^g National Research Nuclear University MEPhI, Russia
^h National University of Science and Technology MISiS, Russia

Аннотация: Temperature and magnetic field dependencies of sheet resistance $R_\Box(T,B)$ in polycrystalline CVD graphene, investigated in the range of 2 $\le T\le$ 300 K and magnetic fields 0 $\le B\le$ 8 T, allowed to determine carrier transport mechanisms in single-layered and twisted CVD graphene. It is shown that for $R_\Box(T,B)$ curves for such samples are described by the interference quantum corrections to the Drude conductivity independently on type of precursor and peculiarities of graphene transfer from Cu foil onto the various substrates (glass or SiO$_2$). The twisted CVD graphene samples have demonstrated additional contribution of 2D hopping conductivity into the $R_\Box(T,B)$ dependencies.

Ключевые слова: graphene, single layer, twisted layers, CVD, carrier transport, magnetoresistance.

Поступила в редакцию: 26.03.2022
Исправленный вариант: 26.03.2022
Принята в печать: 27.03.2022

Язык публикации: английский