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  1. Alloy-disorder scattering of the interacting electron gas in quantum wells and heterostructures of Al$_x$Ga$_{1-x}$As

    Ïèñüìà â ÆÝÒÔ, 98:7 (2013),  472–476
  2. Thermoelectric properties of the interacting two dimensional electron gas in the diffusion regime

    Ïèñüìà â ÆÝÒÔ, 94:6 (2011),  481–485
  3. Single-particle relaxation time of the two-dimensional electron gas in Si/SiGe: many-body effects

    Ïèñüìà â ÆÝÒÔ, 93:8 (2011),  499–504
  4. Superconductor-insulator transition in thin metallic films induced by interface-roughness scattering

    Ïèñüìà â ÆÝÒÔ, 90:9 (2009),  676–680
  5. Calculation of the anisotropic mobility in (110) AlAs quantum wells at zero temperature

    Ïèñüìà â ÆÝÒÔ, 90:5 (2009),  389–392
  6. Determination of Landau's Fermi-liquid parameters in Si-MOSFET systems

    Ïèñüìà â ÆÝÒÔ, 86:9 (2007),  687–690
  7. Subband mobilities and Dingle temperatures within a two-subband model in the presence of localized states

    Ïèñüìà â ÆÝÒÔ, 86:4 (2007),  286–289


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