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Alloy-disorder scattering of the
interacting electron gas in quantum wells
and heterostructures of Al$_x$Ga$_{1-x}$As
Ïèñüìà â ÆÝÒÔ, 98:7 (2013), 472–476
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Thermoelectric properties of the interacting two dimensional electron gas in the diffusion regime
Ïèñüìà â ÆÝÒÔ, 94:6 (2011), 481–485
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Single-particle relaxation time of the two-dimensional electron gas in Si/SiGe: many-body effects
Ïèñüìà â ÆÝÒÔ, 93:8 (2011), 499–504
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Superconductor-insulator transition in thin metallic films induced by interface-roughness scattering
Ïèñüìà â ÆÝÒÔ, 90:9 (2009), 676–680
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Calculation of the anisotropic mobility in (110) AlAs quantum wells at zero temperature
Ïèñüìà â ÆÝÒÔ, 90:5 (2009), 389–392
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Determination of Landau's Fermi-liquid parameters in Si-MOSFET systems
Ïèñüìà â ÆÝÒÔ, 86:9 (2007), 687–690
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Subband mobilities and Dingle temperatures within a two-subband model in the presence of localized states
Ïèñüìà â ÆÝÒÔ, 86:4 (2007), 286–289
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