Lour Wen-Shiung

Публикации в базе данных Math-Net.Ru

1. Comparative study of InGaP/GaAs high electron mobility transistors with upper and lower $\delta$-doped supplied layers
   
   Физика и техника полупроводников, 46:4 (2012),  530–534
2. Comparative investigation of InGaP/GaAs pseudomorphic field-effect transistors with triple doped-channel profiles
   
   Физика и техника полупроводников, 45:9 (2011),  1279–1281
3. A New InGaP/GaAs Tunneling Heterostructure–Emitter Bipolar Transistor (T-HEBT)
   
   Физика и техника полупроводников, 45:5 (2011),  657–659
4. InP/GaAsSb type-II DHBTs with GaAsSb/InGaAs superlattice-base and GaAsSb bulk-base structures
   
   Физика и техника полупроводников, 44:8 (2010),  1130–1134
5. InGaP/InGaAs Doped-Channel Direct-Coupled Field-Effect Transistors Logic with Low Supply Voltage
   
   Физика и техника полупроводников, 44:2 (2010),  235–239