Ye Sheng-Shiun

Публикации в базе данных Math-Net.Ru

1. Comparative study of InGaP/GaAs high electron mobility transistors with upper and lower $\delta$-doped supplied layers
   
   Физика и техника полупроводников, 46:4 (2012),  530–534
2. A New InGaP/GaAs Tunneling Heterostructure–Emitter Bipolar Transistor (T-HEBT)
   
   Физика и техника полупроводников, 45:5 (2011),  657–659