Gaquiere Christophe

Публикации в базе данных Math-Net.Ru

1. Effect of surface passivation by SiN/SiO$_2$ of AlGaN/GaN high-electron mobility transistors on Si substrate by deep level transient spectroscopy method
   
   Физика и техника полупроводников, 47:7 (2013),  1002–1005
2. Evidence of surface states for AlGaN/GaN/SiC HEMTs passivated Si$_3$N$_4$ by CDLTS
   
   Физика и техника полупроводников, 46:3 (2012),  396–399