Lenka Trupti Ranjan

Публикации в базе данных Math-Net.Ru

1. Model development for current–voltage and transconductance characteristics of normally-off AlN/GaN MOSHEMT
   
   Физика и техника полупроводников, 50:3 (2016),  388–392
2. A model predicting sheet charge density and threshold voltage with dependence on interface states density in LM–InAlN/GaN MOSHEMT
   
   Физика и техника полупроводников, 49:4 (2015),  524–528
3. Role of nanoscale AlN and InN for the microwave characteristics of AlGaN/(Al,In)N/GaN-based HEMT
   
   Физика и техника полупроводников, 45:9 (2011),  1258–1265
4. Characteristics Study of 2DEG Transport Properties of AlGaN/GaN and AlGaAs/GaAs-based HEMT
   
   Физика и техника полупроводников, 45:5 (2011),  660–665