RUS
ENG
Полная версия
ПЕРСОНАЛИИ
Panda Ajit K
Публикации в базе данных Math-Net.Ru
Doping-dependent nonlinear electron mobility in GaAs|In
$_x$
Ga
$_{1-x}$
As coupled quantum-well pseudo-morphic MODFET structure
Физика и техника полупроводников
,
54
:7 (2020),
676
Role of nanoscale AlN and InN for the microwave characteristics of AlGaN/(Al,In)N/GaN-based HEMT
Физика и техника полупроводников
,
45
:9 (2011),
1258–1265
Characteristics Study of 2DEG Transport Properties of AlGaN/GaN and AlGaAs/GaAs-based HEMT
Физика и техника полупроводников
,
45
:5 (2011),
660–665
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