Abdikarimov A

Публикации в базе данных Math-Net.Ru

1. Simulation of DIBL effect in junctionless SOI MOSFETs with extended gate
   
   Наносистемы: физика, химия, математика, 8:1 (2017),  75–78
2. Simulation of DIBL effect in 25 nm SOIFinFET with the different body shapes
   
   Наносистемы: физика, химия, математика, 8:1 (2017),  71–74
3. The lateral capacitance of nanometer MNOSFET with a single charge trapped in oxide layeror at SiO$_2$ – Si$_3$N$_4$ interfaceat
   
   Наносистемы: физика, химия, математика, 6:6 (2015),  837–842