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Imenkov Al'bert Nikolaevich

Publications in Math-Net.Ru

  1. Collective modes in coupled semiconductor disk lasers in the case of whispering-gallery modes

    Fizika i Tekhnika Poluprovodnikov, 51:9 (2017),  1273–1277
  2. Photovoltage and photocurrent in Pd–oxide–InP structures in a hydrogen medium

    Fizika i Tekhnika Poluprovodnikov, 50:7 (2016),  946–951
  3. High-power LEDs based on InGaAsP/InP heterostructures

    Fizika i Tekhnika Poluprovodnikov, 48:12 (2014),  1693–1696
  4. Electroluminescence properties of a whispering-gallery-mode laser with coupled disk cavities

    Fizika i Tekhnika Poluprovodnikov, 48:10 (2014),  1434–1438
  5. Temperature dependence of the threshold current in quantum-well WGM lasers (2.0–2.5 $\mu$m)

    Fizika i Tekhnika Poluprovodnikov, 47:6 (2013),  821–824
  6. Improvement in the quantum sensitivity of InAs/InAsSb/InAsSbP heterostructure photodiodes

    Fizika i Tekhnika Poluprovodnikov, 47:5 (2013),  690–695
  7. Study of the emission extraction efficiency of mesa-LEDs with a narrow-gap InAsSb active region

    Fizika i Tekhnika Poluprovodnikov, 46:2 (2012),  247–251
  8. Characterization of quantum-confinement whispering-gallery-mode lasers operating above room temperature

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 38:14 (2012),  27–31
  9. Anisotropic polarization of radiation in quantum-confinement whispering-gallery-mode lasers

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 38:3 (2012),  4–9
  10. Analysis of spatial modes in half-disk lasers based on AlGaAsSb/InGaAsSb quantum well nanoheterostructures

    Fizika i Tekhnika Poluprovodnikov, 45:3 (2011),  365–371
  11. Interference of emission from disk-shaped lasers based on quantum-confined AlGaAsSb/InGaAsSb nanoheterostructures

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 36:13 (2010),  89–95
  12. Frequency tuning due to nonlinear effects in whispering gallery mode laser based on InAsSb/InAsSbP heterostructure

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 36:8 (2010),  7–13
  13. LEDs ($\lambda_{\mathrm{max}}$ = 3.6 $\mu$m) with cone-shaped light-emitting surfaces

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 36:3 (2010),  104–110
  14. InAsSb/InAsSbP injection lasers for high-resolution spectroscopy

    Kvantovaya Elektronika, 20:9 (1993),  839–842
  15. Nature of long-wavelength shift of spectrum of coherent radiation in heterolasers based on GaInAsSb

    Fizika i Tekhnika Poluprovodnikov, 26:11 (1992),  1971–1976
  16. LENGTH-WAVE LASERS BASED ON INASSB-INASSBP FOR METHANE SPECTROSCOPY WHERE (LAMBDA=3.2-3.4 MU-M)

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 18:22 (1992),  6–10
  17. GENERATION OF COHERENT EMISSION ON P-P-BOUNDARY IN DHS GAINASSB LASERS

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 18:17 (1992),  18–24
  18. Исследование температурной зависимости пороговой плотности тока ДГС лазеров на основе GaInAsSb

    Fizika i Tekhnika Poluprovodnikov, 25:3 (1991),  394–401
  19. EFFECT OF INTERFERENCE RECOMBINATION ON THRESHOLD CHARACTERISTICS OF GAINASSB/GASB LASERS

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 17:17 (1991),  54–59
  20. EMISSION STABILIZATION UNDER THE GROWN INGAASSB-GASB HETEROLASE (LAMBDA=2-MU-M) OPERATION

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 17:6 (1991),  56–60
  21. Природа спонтанной электролюминесценции в гетеросветодиодах на основе GaInAsSb для спектрального диапазона $1.8{-}2.4$ мкм

    Fizika i Tekhnika Poluprovodnikov, 24:10 (1990),  1708–1714
  22. LONG-WAVE LIGHT DIODES BASED ON GAINASSB IN THE VICINITY OF IMMSCIBILITY DOMAIN WHERE LAMBDA=2,4-2,6 MU-M, T=300-K)

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 16:24 (1990),  19–24
  23. LONG-WAVE LIGHT DIODES BASED ON INAS1-X-YSBXPY/INAS HETEROTRANSITIONS (WHERE LAMBDA=3.0-4 MU-M AT 300-K) WITH WIDE-BAND WINDOW

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 16:16 (1990),  42–47
  24. CALCULATION OF THE WIDTH OF EMISSION-LINE OF LONG-WAVE GAINASSB INJECTION-LASERS

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 16:14 (1990),  66–70
  25. Спонтанная электролюминесценция в гетеропереходах II типа на основе GaInAsSb/GaSb (${\lambda=2.5}$ мкм, ${T=300}$ K)

    Fizika i Tekhnika Poluprovodnikov, 23:8 (1989),  1373–1377
  26. HIGH-PERFORMANCE PHOTODIODES BASED ON GAINASSB FOR SPECTRAL RANGE OF 1.8-2.4 MU-M (T=300-K)

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 15:18 (1989),  71–75
  27. RELAXATION OF EMISSION AND NON-EQUILIBRIUM POPULATION IN QUANTUM-DIMENSIONAL SEMICONDUCTING LASERS

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 15:3 (1989),  79–83
  28. COHERENT EMISSION-SPECTRA OF GAINASSB BAND LASERS

    Zhurnal Tekhnicheskoi Fiziki, 58:8 (1988),  1623–1626
  29. LONG-WAVE LASERS BASED ON GAINASSB SOLID-SOLUTIONS NEAR THE IMMISCIBILITY BOUNDARY(LAMBDA-APPROXIMATELY-2.5 MU-M, T=300-K)

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:20 (1988),  1839–1843
  30. EMISSION GENERATION IN THE CHANNELED OVERGROWN LASER BASED ON GAINASSB/GASB IN CONTINUOUS REGIME (T=20-DEGREES-C, LAMBDA=2.0-MU-M)

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:18 (1988),  1671–1675
  31. HIGH-EFFICIENT PHOTODIODES BASED ON GAINASSB (WHERE LAMBDA=2.2 MU-M, ZETA=4-PERCENT, T=300-K)

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:9 (1988),  845–849
  32. Effect of a resonator length on electroluminescent characteristics of $Ga\,In\,As\,Sb$-based lasers

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:9 (1987),  517–523
  33. Manifestation of self-correlated quantum-dimensional potential holes in electroluminescent properties of $Ga\,In\,As\,Sb$ based lasers

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:8 (1987),  459–464
  34. Polarization of emission in quantum dimensional on one heterotransition

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:6 (1987),  332–337
  35. Generation of Coherent Radiation in Quantum-Dimensional Structure on the Single Heterojunction

    Fizika i Tekhnika Poluprovodnikov, 20:12 (1986),  2217–2221
  36. Expansion of spectral photosensitivity in variable R-P-structures by the over-emission effect

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:20 (1986),  1241–1245
  37. Quantum-dimensional laser with single heterojunction

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:11 (1986),  664–668
  38. Injection ($Ga\,Al\,As\,Sb/Ga\,Sb/Ga\,In\,As\,Sb$) heterolaser with $2^x$-channel wave-guide-(DHS 2KV $\lambda=2$-mu-m), operating at room-temperature

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:9 (1986),  557–561
  39. Coordinate Dependence of the Difference between the Coefficients of Collision Ionization of Holes and Electrons in a Variband $p{-}n$ Structure

    Fizika i Tekhnika Poluprovodnikov, 19:3 (1985),  502–506
  40. Квантовая эффективность пластически и упруго деформированных варизонных Ga$_{1-x}$Al$_{x}$P $p{-}n$-структур

    Fizika i Tekhnika Poluprovodnikov, 17:12 (1983),  2173–2176
  41. Спектральная зависимость коэффициента лавинного умножения в варизонной $p{-}n$-структуре

    Fizika i Tekhnika Poluprovodnikov, 17:4 (1983),  753–755
  42. Спектры фоточувствительности варизонных Ga$_{1-x}$Al$_{x}$P $p{-}n$-структур

    Fizika i Tekhnika Poluprovodnikov, 17:1 (1983),  125–128
  43. Electrical properties and photoconductivity of $\mathrm{ZnSiAs}_2$ crystals of $n$-type

    Dokl. Akad. Nauk SSSR, 216:1 (1974),  56–58
  44. Optical and photoelectric properties of single $\mathrm{ZnSiP}_2$ crystals

    Dokl. Akad. Nauk SSSR, 163:3 (1965),  606–608

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