Baranov Aleksey Nikolaevich

Publications in Math-Net.Ru

1. Conductivity of nanocontact to A$^{\mathrm{III}}$As- and A$^{\mathrm{III}}$Sb semiconductors with a native oxide layer
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 50:11 (2024),  42–46
2. Collective modes in coupled semiconductor disk lasers in the case of whispering-gallery modes
   
   Fizika i Tekhnika Poluprovodnikov, 51:9 (2017),  1273–1277
3. Mode synchronization in a laser with coupled disk cavities
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 41:16 (2015),  77–83
4. Electroluminescence properties of a whispering-gallery-mode laser with coupled disk cavities
   
   Fizika i Tekhnika Poluprovodnikov, 48:10 (2014),  1434–1438
5. Temperature dependence of the threshold current in quantum-well WGM lasers (2.0–2.5 $\mu$m)
   
   Fizika i Tekhnika Poluprovodnikov, 47:6 (2013),  821–824
6. Characterization of quantum-confinement whispering-gallery-mode lasers operating above room temperature
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 38:14 (2012),  27–31
7. Anisotropic polarization of radiation in quantum-confinement whispering-gallery-mode lasers
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 38:3 (2012),  4–9
8. InAsSb/InAsSbP injection lasers for high-resolution spectroscopy
   
   Kvantovaya Elektronika, 20:9 (1993),  839–842
9. Nature of long-wavelength shift of spectrum of coherent radiation in heterolasers based on GaInAsSb
   
   Fizika i Tekhnika Poluprovodnikov, 26:11 (1992),  1971–1976
10. Исследование температурной зависимости пороговой плотности тока ДГС лазеров на основе GaInAsSb
    
    Fizika i Tekhnika Poluprovodnikov, 25:3 (1991),  394–401
11. Оптическое отражение и определение характеристик эпитаксиальных структур InAs$_{1-x-y}$Sb$_{x}$P$_{y}$/InAs
    
    Fizika i Tekhnika Poluprovodnikov, 25:1 (1991),  99–101
12. FIELD DISTRIBUTION EFFECT ON SURFACE BREAKDOWN PRESSURE OF COAXIAL SYSTEM INSULATORS IN CONDUCTING MEDIA
    
    Zhurnal Tekhnicheskoi Fiziki, 60:9 (1990),  167–169
13. Природа спонтанной электролюминесценции в гетеросветодиодах на основе GaInAsSb для спектрального диапазона $1.8{-}2.4$ мкм
    
    Fizika i Tekhnika Poluprovodnikov, 24:10 (1990),  1708–1714
14. Кластерные образования в эпитаксиальных слоях твердых растворов $p$-GaInSbAs, выращенных на подложках $n$-GaSb : Te
    
    Fizika i Tekhnika Poluprovodnikov, 24:6 (1990),  1072–1078
15. Misfit stress relaxation in $\mathrm{In}_{1-x}\mathrm{Ga}_{x}\mathrm{As}_{1-y}\mathrm{Sb}_{y}/\mathrm{GaSb}(x\sim 0.1,y\sim 0.2)$ heterostructures
    
    Fizika Tverdogo Tela, 31:8 (1989),  158–163
16. Спонтанная электролюминесценция в гетеропереходах II типа на основе GaInAsSb/GaSb (${\lambda=2.5}$ мкм, ${T=300}$ K)
    
    Fizika i Tekhnika Poluprovodnikov, 23:8 (1989),  1373–1377
17. Кинетика изменения концентрации структурных дефектов и их роль в рассеянии дырок в $p$-GaSb
    
    Fizika i Tekhnika Poluprovodnikov, 23:5 (1989),  780–786
18. COHERENT EMISSION-SPECTRA OF GAINASSB BAND LASERS
    
    Zhurnal Tekhnicheskoi Fiziki, 58:8 (1988),  1623–1626
19. DEFECT FORMATION IN GAALSB/GASB STRUCTURES FOR PHOTODIODES
    
    Zhurnal Tekhnicheskoi Fiziki, 57:2 (1987),  316–321
20. Change of concentration of natural acceptors in $Ga\,Sb$
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:18 (1987),  1103–1108
21. Effect of a resonator length on electroluminescent characteristics of $Ga\,In\,As\,Sb$-based lasers
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:9 (1987),  517–523
22. Avalanche multiplication in photodiode structures, based on $Ga\,In\,As\,Sb$ solid-solutions
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:8 (1987),  481–485
23. Manifestation of self-correlated quantum-dimensional potential holes in electroluminescent properties of $Ga\,In\,As\,Sb$ based lasers
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:8 (1987),  459–464
24. Generation of Coherent Radiation in Quantum-Dimensional Structure on the Single Heterojunction
    
    Fizika i Tekhnika Poluprovodnikov, 20:12 (1986),  2217–2221
25. Photodiodes based on $Ga\,In\,As\,Sb/Ga\,Al\,As\,Sb$ solid-solutions
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:21 (1986),  1311–1315
26. Quantum-dimensional laser with single heterojunction
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:11 (1986),  664–668
27. Injection ($Ga\,Al\,As\,Sb/Ga\,Sb/Ga\,In\,As\,Sb$) heterolaser with $2^x$-channel wave-guide-(DHS 2KV $\lambda=2$-mu-m), operating at room-temperature
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:9 (1986),  557–561
28. Dark Currents in GaAlSb(As) Diode Structures of «Resonant» Composition
    
    Fizika i Tekhnika Poluprovodnikov, 19:9 (1985),  1605–1611
29. STUDY OF THE CAPILLARY EFFECT IN THE GA-AL-AS/GAAS SYSTEM
    
    Zhurnal Tekhnicheskoi Fiziki, 53:11 (1983),  2224–2226