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Yakovlev Yurii Pavlovich

Publications in Math-Net.Ru

  1. InAs/InAsSbP bridge photodiodes: features of the fabrication technology

    Fizika i Tekhnika Poluprovodnikov, 59:8 (2025),  505–509
  2. Bridge-contact microdisk lasers formed by wet chemical etching

    Fizika i Tekhnika Poluprovodnikov, 59:1 (2025),  37–42
  3. Light-emitting diodes based on GaInAsSb solid solutions for the spectral range of 2.5–2.8 $\mu$m

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:21 (2025),  34–37
  4. Hydrogen current generator based on palladium nanofilms

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:11 (2025),  15–17
  5. Current generation in Pd/InP structures in hydrogen medium

    Fizika i Tekhnika Poluprovodnikov, 58:1 (2024),  37–41
  6. Kinetics of changing in optical transmittance of palladium nanolayers during interaction with hydrogen

    Optics and Spectroscopy, 131:3 (2023),  419–423
  7. Development of a method for etching the InAs/InAsSbP photodiode heterostructures

    Fizika i Tekhnika Poluprovodnikov, 57:8 (2023),  710–715
  8. Gettering of epitaxial indium arsenide by the rare Earth element holmium

    Fizika i Tekhnika Poluprovodnikov, 57:2 (2023),  89–94
  9. Photodetectors based on GaInAsSb/GaAlAsSb heterostructures for the practical tasks of precision diode laser spectroscopy

    Fizika i Tekhnika Poluprovodnikov, 56:5 (2022),  508–515
  10. Cascade of impedance instabilities of the structure Pd-surface-oxidized-InP

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 48:17 (2022),  6–8
  11. Hydrogen influence on electrical and photoelectrical properties of InP/Pd thin-film structures obtained by sol-gel method

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 48:10 (2022),  12–15
  12. Optical and structural properties of palladium nanolayers in hydrogen medium

    Optics and Spectroscopy, 129:9 (2021),  1183–1187
  13. Current generation in Pd/InP structures in hydrogen medium

    Fizika i Tekhnika Poluprovodnikov, 55:12 (2021),  1236–1239
  14. Monopolarity of hot charge carrier multiplication in A$^{\mathrm{III}}$B$^{\mathrm{V}}$ semiconductors at high electric field and noiseless avalanche photodiodes (a review)

    Fizika i Tekhnika Poluprovodnikov, 55:11 (2021),  995–1010
  15. Uncooled photodiodes for detecting pulsed infrared radiation in the spectral range of 0.9–1.8 $\mu$m

    Fizika i Tekhnika Poluprovodnikov, 55:7 (2021),  607–613
  16. Hydrogen influence on the optical transparency of palladium layers

    Optics and Spectroscopy, 128:5 (2020),  603–606
  17. Radiative recombination and impact ionization in semiconductor nanostructures (review)

    Fizika i Tekhnika Poluprovodnikov, 54:12 (2020),  1267–1288
  18. Photodiodes for detecting the emission of quantum-sized disk lasers operating on whispering gallery modes (2.2 – 2.3 $\mu$m)

    Fizika i Tekhnika Poluprovodnikov, 54:7 (2020),  677–683
  19. Influence of hydrogen on the impedance of Pd/oxide/InP structures

    Fizika i Tekhnika Poluprovodnikov, 54:6 (2020),  547–551
  20. Long-wavelength leds in the atmospheric transparency window of 4.6 – 5.3 $\mu$m

    Fizika i Tekhnika Poluprovodnikov, 54:2 (2020),  202–206
  21. Influence of hydrogen on the electrical properties of Pd/InP structures

    Fizika i Tekhnika Poluprovodnikov, 53:10 (2019),  1427–1430
  22. Light–emitting diodes based on asymmetrical double InAs/InAsSb/InAsSbP heterostructure for CO$_{2}$ ($\lambda$ = 4.3 $\mu$m) and CO ($\lambda$ = 4.7 $\mu$m) detection

    Fizika i Tekhnika Poluprovodnikov, 53:6 (2019),  832–838
  23. Discovery of III–V semiconductors: physical properties and application

    Fizika i Tekhnika Poluprovodnikov, 53:3 (2019),  291–308
  24. Effect of the hydrogen concentration on the Pd/$n$-InP Schottky diode photocurrent

    Fizika i Tekhnika Poluprovodnikov, 53:2 (2019),  246–248
  25. Electroluminescence in $n$-GaSb/InAs/$p$-GaSb heterostructures with a single quantum well grown by MOVPE

    Fizika i Tekhnika Poluprovodnikov, 53:1 (2019),  50–54
  26. Determining the hydrogen concentration from the photovoltage of Pd–oxide–InP MIS structures

    Fizika i Tekhnika Poluprovodnikov, 52:10 (2018),  1183–1186
  27. GaSb/GaAlAsSb heterostructure photodiodes for the near-IR spectral range

    Fizika i Tekhnika Poluprovodnikov, 52:9 (2018),  1094–1099
  28. Photoconductivity amplification in a type-II $n$-GaSb/InAs/$p$-GaSb heterostructure with a single QW

    Fizika i Tekhnika Poluprovodnikov, 52:8 (2018),  906–911
  29. Measurement of the water content in oil and oil products using IR light-emitting diode–photodiode optrons

    Zhurnal Tekhnicheskoi Fiziki, 87:2 (2017),  315–318
  30. Collective modes in coupled semiconductor disk lasers in the case of whispering-gallery modes

    Fizika i Tekhnika Poluprovodnikov, 51:9 (2017),  1273–1277
  31. Enhancement of the spectral sensitivity of photodiodes for the mid-IR spectral range

    Fizika i Tekhnika Poluprovodnikov, 50:10 (2016),  1420–1424
  32. Photovoltage and photocurrent in Pd–oxide–InP structures in a hydrogen medium

    Fizika i Tekhnika Poluprovodnikov, 50:7 (2016),  946–951
  33. Features of high-temperature electroluminescence in an LED $n$-GaSb/$n$-InGaAsSb/$p$-AlGaAsSb heterostructure with high potential barriers

    Fizika i Tekhnika Poluprovodnikov, 50:6 (2016),  794–800
  34. Photoelectric properties of photodiodes based on InAs/InAsSbP heterostructures with photosensitive-area diameters of 0.1–2.0 mm

    Fizika i Tekhnika Poluprovodnikov, 49:12 (2015),  1720–1726
  35. Light emitting diode–photodiode optoelectronic pairs based on the InAs/InAsSb/InAsSbP heterostructure for the detection of carbon dioxide

    Fizika i Tekhnika Poluprovodnikov, 49:7 (2015),  1003–1006
  36. Electrical properties of Pd-oxide-InP structures

    Fizika i Tekhnika Poluprovodnikov, 49:3 (2015),  376–378
  37. Mode synchronization in a laser with coupled disk cavities

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 41:16 (2015),  77–83
  38. High-power LEDs based on InGaAsP/InP heterostructures

    Fizika i Tekhnika Poluprovodnikov, 48:12 (2014),  1693–1696
  39. Electroluminescence properties of a whispering-gallery-mode laser with coupled disk cavities

    Fizika i Tekhnika Poluprovodnikov, 48:10 (2014),  1434–1438
  40. High-temperature luminescence in an $n$-GaSb/$n$-InGaAsSb/$p$-AlGaAsSb light-emitting heterostructure with a high potential barrier

    Fizika i Tekhnika Poluprovodnikov, 47:9 (2013),  1270–1275
  41. High-speed photodiodes for the mid-infrared spectral region 1.2–2.4 $\mu$m based on GaSb/GaInAsSb/GaAlAsSb heterostructures with a transmission band of 2–5 GHz

    Fizika i Tekhnika Poluprovodnikov, 47:8 (2013),  1109–1115
  42. Photoelectric and luminescence properties of GaSb-Based nanoheterostructures with a deep Al(As)Sb/InAsSb/Al(As)Sb quantum well grown by metalorganic vapor-phase epitaxy

    Fizika i Tekhnika Poluprovodnikov, 47:8 (2013),  1037–1042
  43. Temperature dependence of the threshold current in quantum-well WGM lasers (2.0–2.5 $\mu$m)

    Fizika i Tekhnika Poluprovodnikov, 47:6 (2013),  821–824
  44. Improvement in the quantum sensitivity of InAs/InAsSb/InAsSbP heterostructure photodiodes

    Fizika i Tekhnika Poluprovodnikov, 47:5 (2013),  690–695
  45. Superlinear electroluminescence in GaSb-based heterostructures with high potential barriers

    Fizika i Tekhnika Poluprovodnikov, 47:1 (2013),  75–82
  46. Increasing output power of LEDs ($\lambda$ = 1.7–2.4 $\mu$m) by changing directions of reflected light fluxes in GaSb/GaInAsSb/GaAlAsSb heterostructures

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 39:4 (2013),  39–45
  47. Electrical and electroluminescent properties of InAsSb-Based LEDs ($\lambda$ = 3.85–3.95 $\mu$m) in the temperature interval 20–200$^\circ$C

    Zhurnal Tekhnicheskoi Fiziki, 82:1 (2012),  73–76
  48. Study of the emission extraction efficiency of mesa-LEDs with a narrow-gap InAsSb active region

    Fizika i Tekhnika Poluprovodnikov, 46:2 (2012),  247–251
  49. Characterization of quantum-confinement whispering-gallery-mode lasers operating above room temperature

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 38:14 (2012),  27–31
  50. Photodiodes based on InAs/InAsSb/InAsSbP heterostructures with quantum efficiency increased by changing directions of reflected light fluxes

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 38:10 (2012),  43–49
  51. Mid-infrared radiation sources based on coupled disk cavities

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 38:7 (2012),  7–13
  52. Anisotropic polarization of radiation in quantum-confinement whispering-gallery-mode lasers

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 38:3 (2012),  4–9
  53. Electroluminescent characteristics of InGaAsSb/GaAlAsSb heterostructure Mid-IR LEDs at high temperatures

    Zhurnal Tekhnicheskoi Fiziki, 81:4 (2011),  91–96
  54. Effect of temperature on the electroluminescent properties of mid-IR ($\lambda_{\mathrm{max}}\approx$ 4.4 $\mu$m) flip-chip LEDs based on an InAs/InAsSbP heterostructure

    Fizika i Tekhnika Poluprovodnikov, 45:11 (2011),  1560–1563
  55. Passivation of infrared photodiodes with alcoholic sulfide solution

    Fizika i Tekhnika Poluprovodnikov, 45:4 (2011),  535–539
  56. Analysis of spatial modes in half-disk lasers based on AlGaAsSb/InGaAsSb quantum well nanoheterostructures

    Fizika i Tekhnika Poluprovodnikov, 45:3 (2011),  365–371
  57. Photovoltaic detector based on type II heterostructure with deep AlSb/InAsSb/AlSb quantum well in the active region for the midinfrared spectral range

    Fizika i Tekhnika Poluprovodnikov, 45:2 (2011),  251–255
  58. Room-temperature photodiodes based on InAs/InAs$_{0.88}$Sb$_{0.12}$/InAsSbP heterostructures for extended (1.5–4.8 $\mu$m) spectral range

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 37:19 (2011),  95–103
  59. LEDs based on InAsSbP/InAsSb heterostructures ($\lambda$ = 4.7 $\mu$m) for carbon monoxide detection

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 37:11 (2011),  15–19
  60. Photodiodes based on InAs/InAs$_{0.88}$Sb$_{0.12}$/InAsSbP heterostructures for 2.5–4.9 $\mu$m spectral range

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 37:1 (2011),  11–17
  61. Portable optical water-and-oil analyzer based on a mid-IR (1.6–2.4 $\mu$m) optron consisting of an LED array and a wideband photodiode

    Zhurnal Tekhnicheskoi Fiziki, 80:2 (2010),  99–104
  62. Molecular beam epitaxy of thermodynamically metastable GaInAsSb alloys for medium IR-range photodetectors

    Fizika i Tekhnika Poluprovodnikov, 44:5 (2010),  699–705
  63. High-power InAs/InAsSbP heterostructure leds for methane spectroscopy ($\lambda\approx$ 3.3 $\mu$m)

    Fizika i Tekhnika Poluprovodnikov, 44:2 (2010),  278–284
  64. Electroluminescence in $p$-InAs/AlSb/InAsSb/AlSb/$p(n)$-GaSb type II heterostructures with deep quantum wells at the interface

    Fizika i Tekhnika Poluprovodnikov, 44:1 (2010),  69–74
  65. Interference of emission from disk-shaped lasers based on quantum-confined AlGaAsSb/InGaAsSb nanoheterostructures

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 36:13 (2010),  89–95
  66. Fast-response $p$–$i$–$n$ photodiodes for 0.9–2.4 $\mu$m wavelength range

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 36:9 (2010),  43–49
  67. Frequency tuning due to nonlinear effects in whispering gallery mode laser based on InAsSb/InAsSbP heterostructure

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 36:8 (2010),  7–13
  68. LEDs ($\lambda_{\mathrm{max}}$ = 3.6 $\mu$m) with cone-shaped light-emitting surfaces

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 36:3 (2010),  104–110
  69. LEDs based on InAs/InAsSb heterostructures for CO$_2$ spectroscopy ($\lambda$ = 4.3 $\mu$m)

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 36:1 (2010),  105–110
  70. InAsSb/InAsSbP injection lasers for high-resolution spectroscopy

    Kvantovaya Elektronika, 20:9 (1993),  839–842
  71. Nature of long-wavelength shift of spectrum of coherent radiation in heterolasers based on GaInAsSb

    Fizika i Tekhnika Poluprovodnikov, 26:11 (1992),  1971–1976
  72. LENGTH-WAVE LASERS BASED ON INASSB-INASSBP FOR METHANE SPECTROSCOPY WHERE (LAMBDA=3.2-3.4 MU-M)

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 18:22 (1992),  6–10
  73. UNCOOLED PHOTODIODES BASED ON INASSBP AND GAINASSB FOR 3-5 MU-M SPECTRAL RANGE

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 18:17 (1992),  50–53
  74. LONG-WAVE EMISSION IN GAINASSB-GAALASSB-BASED HETEROLIGHT DIODES

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 18:17 (1992),  40–44
  75. GENERATION OF COHERENT EMISSION ON P-P-BOUNDARY IN DHS GAINASSB LASERS

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 18:17 (1992),  18–24
  76. Лавинное умножение и коэффициенты ионизации в GaInAsSb

    Fizika i Tekhnika Poluprovodnikov, 25:8 (1991),  1429–1436
  77. Исследование температурной зависимости пороговой плотности тока ДГС лазеров на основе GaInAsSb

    Fizika i Tekhnika Poluprovodnikov, 25:3 (1991),  394–401
  78. Интерфейсная люминесценция, обусловленная надбарьерным отражением в изотипной гетероструктуре $p$-InAs/$P$-InAsPSb

    Fizika i Tekhnika Poluprovodnikov, 25:2 (1991),  298–306
  79. Поведение примесей в твердых растворах $p$-GaInSbAs

    Fizika i Tekhnika Poluprovodnikov, 25:2 (1991),  283–286
  80. Электрические и фотоэлектрические свойства узкозонных твердых растворов GaInSbAs : Mn

    Fizika i Tekhnika Poluprovodnikov, 25:2 (1991),  276–282
  81. EFFECT OF INTERFERENCE RECOMBINATION ON THRESHOLD CHARACTERISTICS OF GAINASSB/GASB LASERS

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 17:17 (1991),  54–59
  82. EMISSION STABILIZATION UNDER THE GROWN INGAASSB-GASB HETEROLASE (LAMBDA=2-MU-M) OPERATION

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 17:6 (1991),  56–60
  83. Природа спонтанной электролюминесценции в гетеросветодиодах на основе GaInAsSb для спектрального диапазона $1.8{-}2.4$ мкм

    Fizika i Tekhnika Poluprovodnikov, 24:10 (1990),  1708–1714
  84. Узкозонные гетеропереходы II типа в системе твердых растворов GaSb$-$InAs

    Fizika i Tekhnika Poluprovodnikov, 24:8 (1990),  1397–1406
  85. Кластерные образования в эпитаксиальных слоях твердых растворов $p$-GaInSbAs, выращенных на подложках $n$-GaSb : Te

    Fizika i Tekhnika Poluprovodnikov, 24:6 (1990),  1072–1078
  86. Природа спонтанной электролюминесценции гетероструктур II-типа GalnAsSb/GaSb

    Fizika i Tekhnika Poluprovodnikov, 24:6 (1990),  1056–1061
  87. Электрические и фотоэлектрические свойства твердых растворов $p$-GaInSbAs

    Fizika i Tekhnika Poluprovodnikov, 24:1 (1990),  98–103
  88. LONG-WAVE LIGHT DIODES BASED ON GAINASSB IN THE VICINITY OF IMMSCIBILITY DOMAIN WHERE LAMBDA=2,4-2,6 MU-M, T=300-K)

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 16:24 (1990),  19–24
  89. FUSION-SOLID STATE PHASE-EQUILIBRIA UNDER THE LIQUID-PHASE EPITAXY SYNTHESIS OF A3B5 COMPOUNDS FROM INERT SOLVENTS (BASED ON PB-INAS-INSB AND BI-GA-GAAS SYSTEMS)

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 16:23 (1990),  23–27
  90. LONG-WAVE LIGHT DIODES BASED ON INAS1-X-YSBXPY/INAS HETEROTRANSITIONS (WHERE LAMBDA=3.0-4 MU-M AT 300-K) WITH WIDE-BAND WINDOW

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 16:16 (1990),  42–47
  91. CALCULATION OF THE WIDTH OF EMISSION-LINE OF LONG-WAVE GAINASSB INJECTION-LASERS

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 16:14 (1990),  66–70
  92. PREPARATION OF ALX-IN1-XASYSB1-Y/INAS SOLID-SOLUTIONS BY THE LPE METHOD

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 16:13 (1990),  41–45
  93. PREPARATION OF INX-GA1-X-ASY-SB1-Y SOLID-SOLUTIONS ISOPERIODIC TO CASB NEAR THE IMMISCIBILITY BOUNDARY

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 16:5 (1990),  33–38
  94. UNCOOLED PHOTODIODES BASED ON INAS/INASSBP FOR THE SPECTRAL RANGE OF 2-3,5 MU-M

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 16:4 (1990),  27–32
  95. Спонтанная электролюминесценция в гетеропереходах II типа на основе GaInAsSb/GaSb (${\lambda=2.5}$ мкм, ${T=300}$ K)

    Fizika i Tekhnika Poluprovodnikov, 23:8 (1989),  1373–1377
  96. Кинетика изменения концентрации структурных дефектов и их роль в рассеянии дырок в $p$-GaSb

    Fizika i Tekhnika Poluprovodnikov, 23:5 (1989),  780–786
  97. HIGH-PERFORMANCE PHOTODIODES BASED ON GAINASSB FOR SPECTRAL RANGE OF 1.8-2.4 MU-M (T=300-K)

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 15:18 (1989),  71–75
  98. LOW-NOISE CUMULATIVE PHOTODIODES WITH SEPARATED AREAS OF ABSORPTION AND MULTIPLICATION FOR THE 1.6-2.4-MU-M SPECTRUM RANGE

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 15:17 (1989),  71–76
  99. HIGH-PRECISION METHOD OF COMPUTATION OF FUSION-SOLIDS PHASE-EQUILIBRIA IN A3B5 SYSTEMS (BASED ON IN-GA-AS-SB)

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 15:12 (1989),  67–73
  100. SUPERFAST-RESPONSE GAINASSB-BASED P-1-N PHOTODIODE FOR SPECTRAL RANGE OF 1,5-2,3 MU-M

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 15:7 (1989),  15–19
  101. RELAXATION OF EMISSION AND NON-EQUILIBRIUM POPULATION IN QUANTUM-DIMENSIONAL SEMICONDUCTING LASERS

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 15:3 (1989),  79–83
  102. COHERENT EMISSION-SPECTRA OF GAINASSB BAND LASERS

    Zhurnal Tekhnicheskoi Fiziki, 58:8 (1988),  1623–1626
  103. LONG-WAVE LASERS BASED ON GAINASSB SOLID-SOLUTIONS NEAR THE IMMISCIBILITY BOUNDARY(LAMBDA-APPROXIMATELY-2.5 MU-M, T=300-K)

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:20 (1988),  1839–1843
  104. EMISSION GENERATION IN THE CHANNELED OVERGROWN LASER BASED ON GAINASSB/GASB IN CONTINUOUS REGIME (T=20-DEGREES-C, LAMBDA=2.0-MU-M)

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:18 (1988),  1671–1675
  105. GAINASSB/GAALASSB-BASED AVALANCHE PHOTODIODE WITH SEPARATED ABSORPTION AND MULTIPLICATION AREAS

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:11 (1988),  986–991
  106. HIGH-EFFICIENT PHOTODIODES BASED ON GAINASSB (WHERE LAMBDA=2.2 MU-M, ZETA=4-PERCENT, T=300-K)

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:9 (1988),  845–849
  107. CUMULATION OF PHOTOFLOW IN THE N-N GASB-GAINASSB ISOTOPIC STRUCTURE

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:5 (1988),  389–393
  108. DEFECT FORMATION IN GAALSB/GASB STRUCTURES FOR PHOTODIODES

    Zhurnal Tekhnicheskoi Fiziki, 57:2 (1987),  316–321
  109. Change of concentration of natural acceptors in $Ga\,Sb$

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:18 (1987),  1103–1108
  110. Effect of a resonator length on electroluminescent characteristics of $Ga\,In\,As\,Sb$-based lasers

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:9 (1987),  517–523
  111. Avalanche multiplication in photodiode structures, based on $Ga\,In\,As\,Sb$ solid-solutions

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:8 (1987),  481–485
  112. Manifestation of self-correlated quantum-dimensional potential holes in electroluminescent properties of $Ga\,In\,As\,Sb$ based lasers

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:8 (1987),  459–464
  113. Polarization of emission in quantum dimensional on one heterotransition

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:6 (1987),  332–337
  114. The photoluminescence spectrum and polarization in indirect gap $\mathrm{Ga}_{1-x}\mathrm{Al}_{x}\mathrm{As}$ semiconductor crystals

    Fizika Tverdogo Tela, 28:6 (1986),  1869–1874
  115. Generation of Coherent Radiation in Quantum-Dimensional Structure on the Single Heterojunction

    Fizika i Tekhnika Poluprovodnikov, 20:12 (1986),  2217–2221
  116. Photodiodes based on $Ga\,In\,As\,Sb/Ga\,Al\,As\,Sb$ solid-solutions

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:21 (1986),  1311–1315
  117. Expansion of spectral photosensitivity in variable R-P-structures by the over-emission effect

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:20 (1986),  1241–1245
  118. Quantum-dimensional laser with single heterojunction

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:11 (1986),  664–668
  119. Injection ($Ga\,Al\,As\,Sb/Ga\,Sb/Ga\,In\,As\,Sb$) heterolaser with $2^x$-channel wave-guide-(DHS 2KV $\lambda=2$-mu-m), operating at room-temperature

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:9 (1986),  557–561
  120. Photoluminescence of Gallium-Antimonide Epitaxial Layers Grown from the Melts Enriched by Antimony

    Fizika i Tekhnika Poluprovodnikov, 19:9 (1985),  1676–1679
  121. Dark Currents in GaAlSb(As) Diode Structures of «Resonant» Composition

    Fizika i Tekhnika Poluprovodnikov, 19:9 (1985),  1605–1611
  122. Luminescence of (GaAl)P Layers Elastically and Plastically Deformed in Heteroepitaxy

    Fizika i Tekhnika Poluprovodnikov, 19:6 (1985),  1078–1080
  123. Coordinate Dependence of the Difference between the Coefficients of Collision Ionization of Holes and Electrons in a Variband $p{-}n$ Structure

    Fizika i Tekhnika Poluprovodnikov, 19:3 (1985),  502–506
  124. Development of $(Ga\,Al)As$ superfine layers by liquid epitaxy

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:8 (1985),  465–469
  125. Suppression of natural acceptors in $Ga\,Sb$

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:2 (1985),  117–121
  126. NON-HOMOGENEOUS MULTIPLICATION IN CASCADE PHOTODIODES WITH THE INCONGRUITY OF LATTICE PERIODS ON THE HETEROBOUNDARY

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 10:22 (1984),  1360–1364
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  128. STUDY OF THE CAPILLARY EFFECT IN THE GA-AL-AS/GAAS SYSTEM

    Zhurnal Tekhnicheskoi Fiziki, 53:11 (1983),  2224–2226
  129. DISTINCTION OF THERMAL-EXPANSION COEFFICIENTS IN GA1-XALXP-GAP HETEROSTRUCTURES

    Zhurnal Tekhnicheskoi Fiziki, 53:2 (1983),  411–412
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    Fizika i Tekhnika Poluprovodnikov, 17:12 (1983),  2173–2176
  131. Спектральная зависимость коэффициента лавинного умножения в варизонной $p{-}n$-структуре

    Fizika i Tekhnika Poluprovodnikov, 17:4 (1983),  753–755
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    TVT, 4:6 (1966),  882–883
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    Dokl. Akad. Nauk SSSR, 151:4 (1963),  826–828

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