Skljarchuk V M

Publications in Math-Net.Ru

1. Charge transport mechanisms in Schottky diodes based on low-resistance CdTe:Mn
   
   Fizika i Tekhnika Poluprovodnikov, 47:7 (2013),  907–915
2. Effect of the concentration of uncompensated impurities on the properties of CdTe-based X- and $\gamma$-ray detectors
   
   Fizika i Tekhnika Poluprovodnikov, 46:3 (2012),  389–395
3. Band gap of CdTe and Cd$_{0.9}$Zn$_{0.1}$Te crystals
   
   Fizika i Tekhnika Poluprovodnikov, 45:10 (2011),  1323–1330
4. Features of the mechanism of electrical conductivity of semiinsulating CdTe crystals
   
   Fizika i Tekhnika Poluprovodnikov, 44:6 (2010),  729–734
5. The density and interdiffusion coefficients of bismuth-tin melts of eutectic and near-eutectic composition
   
   TVT, 48:2 (2010),  206–209
6. Hot luminescence of a silicon bipolar-transistor
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:23 (1985),  1437–1440
7. RADIATION OF LIGHT BY METAL DURING DIRECT DISPLACEMENT OF A SCHOTTKY DIODE
   
   Zhurnal Tekhnicheskoi Fiziki, 54:6 (1984),  1185–1186
8. Mechanism of Electroluminescence of Back-Biased Silicon $p{-}n$ Junction
   
   Fizika i Tekhnika Poluprovodnikov, 18:3 (1984),  426–430