Petrov A I

Publications in Math-Net.Ru

1. Optimization of InGaAs/GaAs quantum-well strain-layer heterojunction laser structures
   
   Kvantovaya Elektronika, 20:5 (1993),  454–456
2. Laser diode emitting cw 663 nm radiation at room temperature
   
   Kvantovaya Elektronika, 18:7 (1991),  824–825
3. Investigation of the polarization of radiation from single-channel injection lasers
   
   Kvantovaya Elektronika, 6:8 (1979),  1789–1792
4. Single-frequency cw injection heterolaser tunable by an external dispersive resonator
   
   Kvantovaya Elektronika, 6:6 (1979),  1264–1270
5. Effect of the active region width in GaAs semiconductor injection lasers on single-frequency stimulated emission conditions
   
   Kvantovaya Elektronika, 6:4 (1979),  797–802
6. Stimulated emission from neodymium-doped yttrium aluminum garnet crystals pumped with injection lasers
   
   Kvantovaya Elektronika, 2:5 (1975),  1050–1054
7. Investigation of injection lasers with a wide active region
   
   Kvantovaya Elektronika, 1:5 (1974),  1220–1222
8. Injection laser with an average output power of 200 mW
   
   Kvantovaya Elektronika, 1:1 (1974),  163–164
9. Some aspects of the degradation of heterojunction lasers
   
   Kvantovaya Elektronika, 1972, no. 3(9),  108–110
10. Internal parameters of injection lasers at 300°K
    
    Kvantovaya Elektronika, 1971, no. 5,  99–101
11. Dependence of the stimulated emission threshold of injection lasers on the duration of pumping current pulses
    
    Kvantovaya Elektronika, 1971, no. 5,  97–99