Mokerov Vladimir Grigor'evich

Publications in Math-Net.Ru

1. Optical properties of the two-dimentional electron gas in the $\mathrm{N}$–$\mathrm{AlGaAs}/\mathrm{GaAs}$ heterostructures
   
   Dokl. Akad. Nauk, 348:5 (1996),  608–610
2. Photoluminescence of the three-dimensional and two-dimensional carries in the $\mathrm{N}$–$\mathrm{AlGaAs}/\mathrm{GaAs}$-heterostructures
   
   Dokl. Akad. Nauk, 348:1 (1996),  42–44
3. Rate equations for layer-by-layer epitaxial growth
   
   Dokl. Akad. Nauk, 347:4 (1996),  469–471
4. Extended model of the molecular beam epitaxial growth kinetics on vicinal surface
   
   Dokl. Akad. Nauk, 344:1 (1995),  40–42
5. Influence of $\mathrm{GaAs}$ surface structure before $\mathrm{Si}$ deposition on $\delta$-doping
   
   Dokl. Akad. Nauk, 332:5 (1993),  575–577
6. Effect of spacer-layers on current-voltage characteristic of tunnelly resonance diodes
   
   Fizika i Tekhnika Poluprovodnikov, 26:10 (1992),  1795–1800
7. Multiple band structure with quasi-1$D$ electron energy spectrum
   
   Fizika i Tekhnika Poluprovodnikov, 26:9 (1992),  1521–1528
8. Characteristic and special features of near-surface $\delta$-doped layer conduction in GaAs under variation of 2D-electron concentration
   
   Fizika i Tekhnika Poluprovodnikov, 26:8 (1992),  1462–1470
9. ELECTRONIC MOBILITY OF GALLIUM-ARSENIDE LAYERS PREPARED THROUGH MOLECULAR-BEAM EPITAXY IN HYDROGEN ATMOSPHERE
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 17:17 (1991),  25–28
10. Фотоэлектрические характеристики многослойных $p^{+}{-}i{-}n^{+}$-структур GaAs$-$AlGaAs с квантовыми ямами
    
    Fizika i Tekhnika Poluprovodnikov, 24:11 (1990),  2017–2023
11. Фотопроводимость в области циклотронного резонанса двумерного электронного газа в GaAs/AlGaAs при больших факторах заполнения
    
    Fizika i Tekhnika Poluprovodnikov, 24:4 (1990),  635–637
12. RESONANCE TUNNELING IN 2-BARRIER STRUCTURE DIODES ON SEMI-INSULATING SUBSTRATE
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 16:20 (1990),  76–78
13. NEW EPITAXIAL STRUCTURE FOR ARSENIDE-GALLIUM DEVICES ON SILICON SUBLAYERS
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 16:11 (1990),  48–52
14. Ac quantum Hall effect in $\mathrm{GaAs}$–$\mathrm{Ga}_{1-x}\mathrm{Al}_{x}\mathrm{As}$ heterostructures
    
    Fizika Tverdogo Tela, 31:3 (1989),  73–78
15. FIELD DISTRIBUTION IN BOUNDARY MAGNETOPLASMA OSCILLATIONS IN 2D-CHANNEL OF GAAS-ALGAAS HETEROSTRUCTURE
    
    Zhurnal Tekhnicheskoi Fiziki, 59:8 (1989),  136–138
16. Резонансный эффект Фарадея в ограниченной двумерной электронной системе
    
    Fizika i Tekhnika Poluprovodnikov, 22:7 (1988),  1196–1198
17. Determination of Potential-Barrier Height in Heterojunctions with Two-Dimensional Electron Gas
    
    Fizika i Tekhnika Poluprovodnikov, 21:8 (1987),  1522–1524
18. Two-Dimensional Electron-Hole System in the Region of Heterojunction in GaAs$-$GaAlAs Structures with Modulated Doping
    
    Fizika i Tekhnika Poluprovodnikov, 21:3 (1987),  449–455
19. DETERMINATION OF THICKNESS AND COMPOSITION OF EPITAXIAL LAYERS DURING GAAS-GA1-XALX-AS STRUCTURE FORMATION
    
    Zhurnal Tekhnicheskoi Fiziki, 56:6 (1986),  1198–1201
20. ELECTRON AUGER-SPECTROMETRY OF THIN PLATINUM SILICIDE FILMS ON SILICON
    
    Zhurnal Tekhnicheskoi Fiziki, 54:6 (1984),  1212–1214
21. Mechanism of phase transitions in vanadium and titanium oxides
    
    Dokl. Akad. Nauk SSSR, 264:6 (1982),  1370–1374
22. Determination of the parameters of pulsed radiation using semiconductor–metal phase transitions in vanadium dioxide
    
    Kvantovaya Elektronika, 8:6 (1981),  1363–1366
23. Coherent properties of a copper vapor laser and dynamic holograms in vanadium dioxide films
    
    Kvantovaya Elektronika, 5:2 (1978),  425–428