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Kryzhanovskaya Natal'ya Vladimirovna

Publications in Math-Net.Ru

  1. Направленность вывода излучения из кольцевых микролазеров с нарушенной вращательной симметрией

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 52:7 (2026),  27–30
  2. Study of the emission from a microdisk laser monolithically integrated with an optical waveguide

    Fizika i Tekhnika Poluprovodnikov, 59:7 (2025),  388–391
  3. Bridge-contact microdisk lasers formed by wet chemical etching

    Fizika i Tekhnika Poluprovodnikov, 59:1 (2025),  37–42
  4. Surface lasing in micropillar cavity lasers

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:21 (2025),  58–62
  5. High-frequency modulation of a quantum dot microring laser at elevated temperature

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:20 (2025),  32–35
  6. Monolithic integration of InGaAs/GaAs quantum dot microdisk lasers with optical transparent waveguides

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:19 (2025),  11–14
  7. Lasing in InGaN/GaN/AlGaN disk microstructures on silicon

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:11 (2025),  41–45
  8. Bimodal whispering-gallery mode lasing in micropillar cavity lasers

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:5 (2025),  41–44
  9. Study of the structural and optical properties of InGaAs quantum dots

    Fizika i Tekhnika Poluprovodnikov, 58:6 (2024),  318–325
  10. Microdisk lasers based on InGaAs/GaAs quantum dots monolithically integrated with a waveguide

    Fizika i Tekhnika Poluprovodnikov, 58:2 (2024),  107–113
  11. Dependence of lasing wavelength on optical loss in quantum dot laser

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 50:21 (2024),  57–60
  12. Optical studies of InP/InAsP/InP nanoinclusions integrated into silicon

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 50:5 (2024),  3–6
  13. Investigation of high-temperature generation of microdisk lasers with optically coupled waveguide

    Optics and Spectroscopy, 131:11 (2023),  1483–1485
  14. The effect of surface passivation of GaAs-based cylindrical mesa structures on their optical properties

    Optics and Spectroscopy, 131:8 (2023),  1112–1117
  15. Effect of arsenic pressure during overgrowth of InAs quantum dots with a thin low-temperature GaAs layer on their optical properties

    Fizika i Tekhnika Poluprovodnikov, 57:4 (2023),  276–281
  16. Model for speed performance of quantum-dot waveguide photodiode

    Fizika i Tekhnika Poluprovodnikov, 57:3 (2023),  215–220
  17. Investigation of a $p$–$i$–$n$ photodetector with an absorbing medium based on InGaAs/GaAs quantum well-dots

    Fizika i Tekhnika Poluprovodnikov, 57:3 (2023),  202–206
  18. Investigation of photoluminescence in the InGaAs/GaAs system with 1100-nm range quantum dots

    Fizika i Tekhnika Poluprovodnikov, 57:1 (2023),  63–70
  19. Effect of nitrogen plasma treatment on the structural and optical properties of InGaN

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 49:5 (2023),  32–35
  20. Temperature dependencies of radiative and nonradiative carrier lifetimes in InGaAs quantum well-dots

    Fizika i Tekhnika Poluprovodnikov, 56:10 (2022),  993–996
  21. The influence of the waveguide layer composition on the emission parameters of 1550 nm InGaAs/InP laser heterostructures

    Fizika i Tekhnika Poluprovodnikov, 56:9 (2022),  933–939
  22. Internal loss in diode lasers with quantum well-dots

    Fizika i Tekhnika Poluprovodnikov, 56:9 (2022),  922–927
  23. Optical properties of silicon nanopillars with a built-in vertical $p$–$n$-junction

    Fizika i Tekhnika Poluprovodnikov, 56:3 (2022),  340–348
  24. Temperature-dependent characteristics of 1.3 $\mu$m InAs/InGaAs/GaAs quantum dot ring lasers

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 48:18 (2022),  36–40
  25. Two-state lasing in injection microdisks with InAs/InGaAs quantum dots

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 48:12 (2022),  40–43
  26. High-speed photodetectors based on InGaAs/GaAs quantum well-dots

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 48:4 (2022),  32–35
  27. High-speed vertically emitting lasers in the spectral range of 1550 nm, implemented in the framework of wafer sintering method

    Kvantovaya Elektronika, 52:10 (2022),  878–884
  28. Ultrahigh modal gain in stripe injection lasers and microlasers based on InGaAs/GaAs quantum dots

    Kvantovaya Elektronika, 52:7 (2022),  593–596
  29. Optical properties of three-dimensional InGaP(As) islands formed by substitution of fifth-group elements

    Optics and Spectroscopy, 129:2 (2021),  218–222
  30. Increase in the efficiency of a tandem of semiconductor laser – optical amplifier based on self-organizing quantum dots

    Fizika i Tekhnika Poluprovodnikov, 55:12 (2021),  1223–1228
  31. Saturation power of a semiconductor optical amplifier based on self-organized quantum dots

    Fizika i Tekhnika Poluprovodnikov, 55:9 (2021),  820–825
  32. Impact of substrate in calculating the electrical resistance of microdisk lasers

    Fizika i Tekhnika Poluprovodnikov, 55:2 (2021),  195–200
  33. MBE growth of InGaN nanowires on SiC/Si(111) and Si(111) substrates

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:21 (2021),  32–35
  34. Increasing the optical power of InGaAs/GaAs microdisk lasers transferred to a silicon substrate by thermal compression

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:20 (2021),  3–6
  35. An investigation of the sensitivity of a microdisk laser to a change in the refractive index of the environment

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:19 (2021),  30–33
  36. Energy consumption at high-frequency modulation of an uncooled InGaAs/GaAs/AlGaAs microdisk laser

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:13 (2021),  28–31
  37. Synthesis of morphologically developed ingan nanostructures on silicon: influence of the substrate temperature on the morphological and optical properties

    Fizika i Tekhnika Poluprovodnikov, 54:9 (2020),  884–887
  38. A study of the photoresponse in graphene produced by chemical vapor deposition

    Fizika i Tekhnika Poluprovodnikov, 54:9 (2020),  833–840
  39. Ultimate lasing temperature of microdisk lasers

    Fizika i Tekhnika Poluprovodnikov, 54:6 (2020),  570–574
  40. MBE-grown In$_x$ Ga$_{1-x}$ As nanowires with 50% composition

    Fizika i Tekhnika Poluprovodnikov, 54:6 (2020),  542
  41. Comparative analysis of injection microdisk lasers based on InGaAsN quantum wells and InAs/InGaAs quantum dots

    Fizika i Tekhnika Poluprovodnikov, 54:2 (2020),  212–216
  42. Lasing of injection microdisks with InAs/InGaAs/GaAs quantum dots transferred to silicon

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:16 (2020),  3–6
  43. A micro optocoupler based on a microdisk laser and a photodetector with an active region based on quantum well-dots

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:13 (2020),  7–10
  44. The effect of self-heating on the modulation characteristics of a microdisk laser

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:11 (2020),  3–7
  45. Evaluation of the impact of surface recombination in microdisk lasers by means of high-frequency modulation

    Fizika i Tekhnika Poluprovodnikov, 53:8 (2019),  1122–1127
  46. Silicon nanopillar microarrays: formation and resonance reflection of light

    Fizika i Tekhnika Poluprovodnikov, 53:2 (2019),  216–220
  47. The use of microdisk lasers based on InAs/InGaAs quantum dots in biodetection

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:23 (2019),  10–13
  48. Synthesis by molecular beam epitaxy and properties of InGaN nanostructures of branched morphology on a silicon substrate

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:21 (2019),  48–50
  49. Specific features of the current–voltage characteristic of microdisk lasers based on InGaAs/GaAs quantum well-dots

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:19 (2019),  37–39
  50. Energy consumption for high-frequency switching of a quantum-dot microdisk laser

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:16 (2019),  49–51
  51. Reflection spectra of microarrays of silicon nanopillars

    Optics and Spectroscopy, 124:5 (2018),  695–699
  52. Violation of local electroneutrality in the quantum well of a semiconductor laser with asymmetric barrier layers

    Fizika i Tekhnika Poluprovodnikov, 52:12 (2018),  1518–1526
  53. Phosphorus-based nanowires grown by molecular-beam epitaxy on silicon

    Fizika i Tekhnika Poluprovodnikov, 52:11 (2018),  1304–1307
  54. Coherent growth of InP/InAsP/InP nanowires on a Si (111) surface by molecular-beam epitaxy

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:3 (2018),  55–61
  55. On the high characteristic temperature of an InAs/GaAs/InGaAsP QD laser with an emission wavelength of $\sim$1.5 $\mu$m on an InP substrate

    Fizika i Tekhnika Poluprovodnikov, 51:10 (2017),  1382–1386
  56. Optical properties of metamorphic hybrid heterostuctures for vertical-cavity surface-emitting lasers operating in the 1300-nm spectral range

    Fizika i Tekhnika Poluprovodnikov, 51:9 (2017),  1176–1181
  57. Study of the structural and optical properties of GaP(N) layers synthesized by molecular-beam epitaxy on Si(100) 4$^\circ$ substrates

    Fizika i Tekhnika Poluprovodnikov, 51:2 (2017),  276–280
  58. Specific features of waveguide recombination in laser structures with asymmetric barrier layers

    Fizika i Tekhnika Poluprovodnikov, 51:2 (2017),  263–268
  59. Laser characteristics of an injection microdisk with quantum dots and its free-space outcoupling efficiency

    Fizika i Tekhnika Poluprovodnikov, 50:10 (2016),  1425–1428
  60. Theory of the power characteristics of quantum-well lasers with asymmetric barrier layers: Inclusion of asymmetry in electron- and hole-state filling

    Fizika i Tekhnika Poluprovodnikov, 50:10 (2016),  1380–1386
  61. Multilayer heterostructures for quantum-cascade lasers operating in the terahertz frequency range

    Fizika i Tekhnika Poluprovodnikov, 50:5 (2016),  674–678
  62. Microdisk injection lasers for the 1.27-$\mu$m spectral range

    Fizika i Tekhnika Poluprovodnikov, 50:3 (2016),  393–397
  63. Laser generation at 1.3 $\mu$m in vertical microcavities containing InAs/InGaAs quantum dot arrays under optical pumping

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:19 (2016),  70–79
  64. Optical and electrical properties of silicon nanopillars

    Fizika i Tekhnika Poluprovodnikov, 49:7 (2015),  961–965
  65. On the optimization of asymmetric barrier layers in InAlGaAs/AlGaAs laser heterostructures on GaAs substrates

    Fizika i Tekhnika Poluprovodnikov, 49:7 (2015),  956–960
  66. Thermal resistance of ultra-small-diameter disk microlasers

    Fizika i Tekhnika Poluprovodnikov, 49:5 (2015),  688–692
  67. The effect of sulfide passivation on luminescence from microdisks with quantum wells and quantum dots

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 41:13 (2015),  86–94
  68. The effect of asymmetric barrier layers in the waveguide region on power characteristics of QW lasers

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 41:9 (2015),  61–70
  69. Lasing in microdisks of ultrasmall diameter

    Fizika i Tekhnika Poluprovodnikov, 48:12 (2014),  1666–1670
  70. Whispering-gallery mode microcavity quantum-dot lasers

    Kvantovaya Elektronika, 44:3 (2014),  189–200
  71. Spectral dependence of the linewidth enhancement factor in quantum dot lasers

    Fizika i Tekhnika Poluprovodnikov, 47:12 (2013),  1681–1686
  72. Room-temperature lasing in microring cavities with an InAs/InGaAs quantum-dot active region

    Fizika i Tekhnika Poluprovodnikov, 47:10 (2013),  1396–1399
  73. Optimization of the design and mode of operation of a QD laser for reducing the heat-to-bitrate ratio

    Fizika i Tekhnika Poluprovodnikov, 47:8 (2013),  1102–1108
  74. Laser generation in microdisc resonators with InAs/GaAs quantum dots transferred on a silicon substrate

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 39:18 (2013),  70–77
  75. High-temperature lasing in a microring laser with an active region based on InAs/InGaAs quantum dots

    Fizika i Tekhnika Poluprovodnikov, 46:8 (2012),  1063–1066
  76. Effect of asymmetric barrier layers in the waveguide region on the temperature characteristics of quantum-well lasers

    Fizika i Tekhnika Poluprovodnikov, 46:8 (2012),  1049–1053
  77. Electroluminescence of GaP$_x$N$_y$As$_{1-x-y}$ nanoheterostructures through a transparent electrode made of CVD graphene

    Fizika i Tekhnika Poluprovodnikov, 46:6 (2012),  815–819
  78. Effect of an excited-state optical transition on the linewidth enhancement factor of quantum dot lasers

    Fizika i Tekhnika Poluprovodnikov, 46:2 (2012),  235–240
  79. Optical properties of quantum-confined heterostructures based on GaP$_x$N$_y$As$_{1-x-y}$ alloys

    Fizika i Tekhnika Poluprovodnikov, 45:9 (2011),  1209–1213
  80. Effect of the nonlinear saturation of the gain on the peak modulation frequency in lasers based on self-assembled quantum dots

    Fizika i Tekhnika Poluprovodnikov, 45:7 (2011),  996–1000
  81. Effect of AlGaAs–(AlGa)$_x$O$_y$ pedestal parameters on characteristics of a microdisk laser with active region based on InAs/InGaAs quantum dots

    Fizika i Tekhnika Poluprovodnikov, 45:7 (2011),  992–995
  82. Semiconductor lasers with asymmetric barrier layers: An approach to high temperature stability

    Fizika i Tekhnika Poluprovodnikov, 45:4 (2011),  540–546
  83. Formation of composite InGaN/GaN/InAlN quantum dots

    Fizika i Tekhnika Poluprovodnikov, 44:10 (2010),  1382–1386
  84. Structural and optical properties of InAlN/GaN distributed Bragg reflectors

    Fizika i Tekhnika Poluprovodnikov, 44:7 (2010),  981–985
  85. Optical properties of quaternary GaN$_x$As$_y$P$_{1-x-y}$ semiconductor alloys

    Fizika i Tekhnika Poluprovodnikov, 44:7 (2010),  886–890
  86. Optical and structural properties of InGaN/GaN short-period superlattices for the active region of light- emitting diodes

    Fizika i Tekhnika Poluprovodnikov, 44:6 (2010),  857–863
  87. A monolithic white LED with an active region based on InGaN QWs separated by short-period InGaN/GaN superlattices

    Fizika i Tekhnika Poluprovodnikov, 44:6 (2010),  837–840

© Steklov Math. Inst. of RAS, 2026