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Publications in Math-Net.Ru
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Electron-beam-pumped lasers using heteroepitaxial zinc selenide obtained from organoelemental compounds
Kvantovaya Elektronika, 10:5 (1983), 1007–1009
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Influence of doping of Ga0.68Al0.32As on its cathodoluminescence and threshold current density of a laser pumped by an electron beam
Kvantovaya Elektronika, 8:1 (1981), 201–204
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Sealed scanning semiconductor laser with transverse electronbeam pumping
Kvantovaya Elektronika, 6:2 (1979), 354–357
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Spontaneous and stimulated emission from GaxIn1–xAs, GaAsxSb1–x, and GaxIn1–xAs1–yPy solid solutions
Kvantovaya Elektronika, 3:11 (1976), 2490–2494
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Spectral and power characteristics of electron-beam-excited gallium antimonide lasers
Kvantovaya Elektronika, 3:10 (1976), 2205–2214
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Electron-beam-pumped AlxGa1–xSb semiconductor laser
Kvantovaya Elektronika, 2:1 (1975), 68–72
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Investigation of the photoluminescence and parameters of laser radiation generated by electron excitation of Al$_x$Ga$_{1-x}$As solid solutions
Kvantovaya Elektronika, 1:12 (1974), 2602–2607
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Influence of structure defects on the radiative recombination in gallium arsenide crystals
Kvantovaya Elektronika, 1:3 (1974), 673–675
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Parameters of electron-beam-pumped AlxGa1–xAs lasers in the visible part of the spectrum
Kvantovaya Elektronika, 1:1 (1974), 178–180
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KGS-3: An electron-beam-pumped gallium antimonide laser
Kvantovaya Elektronika, 1:1 (1974), 114–118
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