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Levinshteĭn Michael Efimovich

Publications in Math-Net.Ru

  1. Effect of irradiation temperature on the carrier removal rate in GaN

    Fizika i Tekhnika Poluprovodnikov, 59:4 (2025),  227–229
  2. Low-temperature luminescence study of the formation of radiation defects in $4H$-$\mathrm{SiC}$ Schottky diodes

    Fizika Tverdogo Tela, 66:12 (2024),  2193–2196
  3. Local diagnostics of spin defects in irradiated SiC Schottky diodes

    Pis'ma v Zh. Èksper. Teoret. Fiz., 120:5 (2024),  367–373
  4. Effect of proton and electron irradiation on the parameters of gallium nitride Schottky diodes

    Fizika i Tekhnika Poluprovodnikov, 58:1 (2024),  49–52
  5. Persistent relaxation processes in proton-irradiated 4H-SiC

    Fizika i Tekhnika Poluprovodnikov, 57:9 (2023),  743–750
  6. Effect of proton irradiation on the properties of high-voltage integrated 4$H$-SiC Schottky diodes at operating temperatures

    Fizika i Tekhnika Poluprovodnikov, 57:1 (2023),  53–57
  7. Low frequency noise and resistance in non-passivated InAsSbP/InAs based photodiodes in the presence of atmosphere with ethanol vapor

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 49:11 (2023),  19–24
  8. Electron irradiation hardness of high-voltage 4H-SiC Schottky diodes in the operating temperature range

    Fizika i Tekhnika Poluprovodnikov, 56:8 (2022),  809–813
  9. Annealing of high voltage 4H-SiC Schottky diodes irradiated with electrons at high temperatures

    Fizika i Tekhnika Poluprovodnikov, 56:4 (2022),  441–445
  10. Influence of the proton irradiation temperature on the characteristics of high-power high-voltage silicon carbide Schottky diodes

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:6 (2020),  35–37
  11. Effect of irradiation with 15-MeV protons on low frequency noise in power SiC MOSFETs

    Fizika i Tekhnika Poluprovodnikov, 53:12 (2019),  1604–1608
  12. Impact of high energy elctron irradiation on surge currents in 4$H$-SiC JBS Schottky diodes

    Fizika i Tekhnika Poluprovodnikov, 53:10 (2019),  1448–1452
  13. SiC-based electronics (100th anniversary of the Ioffe Institute)

    UFN, 189:8 (2019),  803–848
  14. Transient switch-off of a 4$H$-SiC bipolar transistor from the deep-saturation mode

    Fizika i Tekhnika Poluprovodnikov, 51:9 (2017),  1243–1248
  15. Current–voltage characteristics of Schottky diodes at high current densities under the injection of minority carriers

    Fizika i Tekhnika Poluprovodnikov, 51:8 (2017),  1125–1130
  16. On the limit of the injection ability of silicon $p^{+}$–$n$ junctions as a result of fundamental physical effects

    Fizika i Tekhnika Poluprovodnikov, 51:6 (2017),  830–834
  17. Analysis of the impact of non-1D effects on the gate switch-on current in 4$H$-SiC thyristors

    Fizika i Tekhnika Poluprovodnikov, 51:2 (2017),  234–239
  18. Isothermal current–voltage characteristics of high-voltage 4$H$-SiC junction barrier Schottky rectifiers

    Fizika i Tekhnika Poluprovodnikov, 50:5 (2016),  668–673
  19. High-voltage silicon-carbide thyristor with an $n$-type blocking base

    Fizika i Tekhnika Poluprovodnikov, 50:3 (2016),  408–414
  20. Transient processes in high-voltage silicon carbide bipolar-junction transistors

    Fizika i Tekhnika Poluprovodnikov, 47:8 (2013),  1071–1077
  21. Violation of neutrality and occurrence of $S$-shaped current-voltage characteristic for doped semiconductors under double injection

    Fizika i Tekhnika Poluprovodnikov, 47:3 (2013),  302–309
  22. Specific features of the steady-state carrier distribution and holding current in an optically triggered SiC thyristor

    Fizika i Tekhnika Poluprovodnikov, 47:1 (2013),  118–123
  23. Overheating of an optically triggered SiC thyristor during switch-on and turn-on spread

    Fizika i Tekhnika Poluprovodnikov, 46:9 (2012),  1224–1229
  24. Low-frequency noise in as-fabricated and degraded blue InGaAs/GaN LEDs

    Fizika i Tekhnika Poluprovodnikov, 46:2 (2012),  219–223
  25. Modulation waves of charge carriers in $n$- and $p$-type semiconductor layers

    Fizika i Tekhnika Poluprovodnikov, 45:2 (2011),  196–201
  26. Forward-current-generated donor centers in high-voltage 4H-SiC based $p$–$i$–$n$ diodes

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 37:19 (2011),  45–50
  27. Features of degradation in high-voltage 4H-SiC $p$–$i$–$n$ diodes under the action of forward current pulses

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 37:8 (2011),  7–12
  28. $1/f$ noise, electric and photoelectric properties of GaAs irradiated bu high-energy ions

    Fizika i Tekhnika Poluprovodnikov, 26:3 (1992),  543–547
  29. О разнице между статической и динамической силами трения

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 18:5 (1992),  42–46
  30. Природа объемного шума $1/f$ в GaAs и Si (обзор)

    Fizika i Tekhnika Poluprovodnikov, 25:12 (1991),  2065–2104
  31. Температурная зависимость низкочастотного шума в структурно совершенном и подвергнутом деструктивному сжанию GaAs

    Fizika i Tekhnika Poluprovodnikov, 25:2 (1991),  355–358
  32. Релаксация фотопроводимости и шум $1/f$ в GaAs, подвергнутом деструктивному сжатию

    Fizika i Tekhnika Poluprovodnikov, 25:1 (1991),  164–167
  33. Влияние деструктивного одноосного сжатия на шум $1/f$ в GaAs

    Fizika i Tekhnika Poluprovodnikov, 24:10 (1990),  1807–1815
  34. Исследование долговременной релаксации фотопроводимости в Si в связи с проблемой шума $1/f$

    Fizika i Tekhnika Poluprovodnikov, 24:9 (1990),  1531–1538
  35. Кинетика спада долговременно́й фотопроводимости в GaAs и модель объемного шума $1/f$ в полупроводниках

    Fizika i Tekhnika Poluprovodnikov, 24:5 (1990),  836–843
  36. Эффект немонотонной зависимости шума $1/f$ от интенсивности подсветки в Si и модель объемного шума $1/f$ в полупроводниках

    Fizika i Tekhnika Poluprovodnikov, 24:5 (1990),  813–820
  37. Шум $1/f$ и долговременная релаксация фотопроводимости в GaAs

    Fizika i Tekhnika Poluprovodnikov, 23:10 (1989),  1828–1833
  38. Модель объемного шума $1/f$ в лавинно-пролетных диодах

    Fizika i Tekhnika Poluprovodnikov, 23:7 (1989),  1187–1192
  39. Модель объемного шума $1/f$ в полупроводниках

    Fizika i Tekhnika Poluprovodnikov, 23:2 (1989),  283–291
  40. Температурная зависимость напряжения лавинного пробоя в карбид-кремниевых $p{-}n$-переходах

    Fizika i Tekhnika Poluprovodnikov, 22:9 (1988),  1574–1579
  41. Исследование субнаносекундного включения арсенид-галлиевых тиристорных структур

    Fizika i Tekhnika Poluprovodnikov, 22:6 (1988),  1134–1137
  42. Подавление светом шума $1/f$ в кремнии

    Fizika i Tekhnika Poluprovodnikov, 22:6 (1988),  1120–1122
  43. Перестройка светом шума $1/f$ в арсениде галлия

    Fizika i Tekhnika Poluprovodnikov, 22:6 (1988),  1049–1052
  44. TEMPERATURE EFFECT ON LIGHT RETUNING OF 1/F NOISE IN GAAS

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:21 (1988),  1978–1982
  45. VISUALIZATION OF THE SUBNANOSECOND SWITCHING OF ARSENIDE-GALLIUM-DIODE STRUCTURES

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:16 (1988),  1526–1530
  46. NEGATIVE TEMPERATURE-COEFFICIENT OF BREAKDOWN PRESSURE IN SILICON-CARBIDE R-P TRANSITIONS

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:6 (1988),  545–547
  47. Propagation of Switched State in Gallium-Arsenide Thyristors

    Fizika i Tekhnika Poluprovodnikov, 21:1 (1987),  129–133
  48. Current stringing in silicon-carbide R-P-transitions under the breakdown

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:12 (1987),  741–743
  49. Light quenching of the $1/f$ noise in gallium-arsenide

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:11 (1987),  645–648
  50. COMPARATIVE INVESTIGATION OF THE SWITCHING ON PROCESSES OF GALLIUM-ARSENIDE AND SILICON THYRISTORS

    Zhurnal Tekhnicheskoi Fiziki, 56:7 (1986),  1343–1347
  51. $1/f$ Noise of Hot Electrons in GaAs

    Fizika i Tekhnika Poluprovodnikov, 19:9 (1985),  1651–1656
  52. High-Frequency Conduction of Ga$_{x}$In$_{1-x}$Sb in High Electric Fields

    Fizika i Tekhnika Poluprovodnikov, 19:1 (1985),  131–133
  53. DYNAMIC CURRENT LOCALIZATION IN THE TRANSITION SWITCHING ON THE PROCESS OF THYRISTORS

    Zhurnal Tekhnicheskoi Fiziki, 54:1 (1984),  124–130
  54. Особенности неустойчивости в условиях отрицательной дифференциальной проводимости при наличии двух сортов носителей

    Fizika i Tekhnika Poluprovodnikov, 18:9 (1984),  1577–1582
  55. SWITCHED ON STATE PROPAGATION IN GAAS THYRISTORS OF THE LARGE AREA

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 10:23 (1984),  1430–1433
  56. HIGH-POWER, HIGH-SPEED COMMUTATORS BASED ON GAAS DINISTOR STRUCTURES

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 10:7 (1984),  385–388
  57. MAIN PARAMETERS OF SWITCHING-ON OF ARSENIDE-GALLIUM THYRISTORS

    Zhurnal Tekhnicheskoi Fiziki, 53:3 (1983),  573–575
  58. Шум $1/f$ в условиях сильного геометрического магнитосопротивления

    Fizika i Tekhnika Poluprovodnikov, 17:10 (1983),  1830–1834
  59. Исследование процесса переключения обратно смещенного $p{-}n$-перехода в высокопроводящее состояние с помощью моделировани на ЭВМ

    Fizika i Tekhnika Poluprovodnikov, 17:10 (1983),  1812–1816
  60. Распространение включенного состояния в арсенидгаллиевых тиристорах

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 9:9 (1983),  546–549
  61. Transverse-discharge copper vapor laser utilizing an optically controlled semiconductor switch

    Kvantovaya Elektronika, 10:1 (1983),  186–189
  62. Multichannel semiconductor nanosecond switch for excitation of copper vapor by a transverse discharge

    Kvantovaya Elektronika, 8:1 (1981),  191–193

  63. The first international research symposium on promising semiconductor devices (ISDRS-91)

    Fizika i Tekhnika Poluprovodnikov, 26:6 (1992),  1153–1155

© Steklov Math. Inst. of RAS, 2026