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Publications in Math-Net.Ru
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NBn-photodiode based on InAsSb/AlAsSb alloys with a long-wavelength cutoff of 5 $\mu$m
Fizika i Tekhnika Poluprovodnikov, 52:13 (2018), 1636–1640
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Specific features of NH$_3$ and plasma-assisted MBE in the fabrication of III-N HEMT heterostructures
Fizika i Tekhnika Poluprovodnikov, 49:1 (2015), 94–97
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Photosensitivity of structures with quantum wells under normal radiation incidence
Fizika i Tekhnika Poluprovodnikov, 48:2 (2014), 225–228
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Deposition of GaN Layers with a lowered dislocation density by molecular-beam epitaxy
Fizika i Tekhnika Poluprovodnikov, 46:11 (2012), 1460–1462
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AlGaAs/GaAs multiquantum-well heterostructures for long-wavelength (8–10 $\mu$m) IR photodetectors
Pisma v Zhurnal Tekhnicheskoi Fiziki, 38:9 (2012), 81–87
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Powerful highly stable laser diodes for pumping of solid-state lasers
Kvantovaya Elektronika, 25:9 (1998), 789–791
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Recombination Processes in InGaAsP/InP Double Heterostructures
with ${\lambda= 1\div1.5} \mu m$
Fizika i Tekhnika Poluprovodnikov, 18:6 (1984), 1069–1076
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Luminescent and Threshold Characteristics of InGaAsP/InP Double Heterostructures (${0.94\mu m<\lambda<1.51 \mu m}$) under
Optical Excitation
Fizika i Tekhnika Poluprovodnikov, 18:1 (1984), 102–108
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