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Publications in Math-Net.Ru
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Optical properties of indium-doped Hg$_{0.3}$Cd$_{0.7}$Te epitaxial films
Fizika Tverdogo Tela, 67:5 (2025), 805–809
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Thermal annealing of CdTe-rich HgCdTe: structural and optical studies
Fizika Tverdogo Tela, 67:1 (2025), 22–27
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Characterization of wide-bandgap layers in laser structures based on CdHgTe
Fizika Tverdogo Tela, 65:3 (2023), 411–414
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New recombination centers in MBE MCT layers on (013) GaAs substrates
Fizika Tverdogo Tela, 65:1 (2023), 56–62
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Photoluminescence of Hg$_{0.3}$Cd$_{0.7}$Te and Hg$_{0.7}$Cd$_{0.3}$Te epitaxial films
Fizika i Tekhnika Poluprovodnikov, 57:8 (2023), 640–643
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Optical and structural properties of Hg$_{0.7}$Cd$_{0.3}$Te epitaxial films
Fizika i Tekhnika Poluprovodnikov, 55:11 (2021), 1040–1044
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Parametric model of the optical constant spectra of Hg$_{1-x}$Cd$_{x}$Te and determination of the compound composition
Optics and Spectroscopy, 128:12 (2020), 1815–1820
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Optical and structural properties of HgCdTe solid solutions with a high CdTe content
Fizika i Tekhnika Poluprovodnikov, 54:12 (2020), 1302–1308
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An optical study of disordering in cadmium mercury telluride solid solutions
Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:11 (2019), 24–27
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Electrophysical properties of $p$-type undoped and arsenic-doped Hg$_{1-x}$Cd$_{x}$Te epitaxial layers with $x\approx$ 0.4 grown by the MOCVD method
Fizika i Tekhnika Poluprovodnikov, 52:6 (2018), 554–559
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CdHgTe heterostructures on large-area Si(310) substrates for infrared photodetector arrays of the short-wavelength spectral range
Fizika i Tekhnika Poluprovodnikov, 48:6 (2014), 788–792
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High-temperature photoluminescence of CdHgTe solid solutions grown by molecular-beam epitaxy
Zhurnal Tekhnicheskoi Fiziki, 83:10 (2013), 147–150
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Optical monitoring of technological parameters during molecular-beam epitaxy
Fizika i Tekhnika Poluprovodnikov, 46:12 (2012), 1505–1509
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Photoluminescence of Hg$_{1-x}$Cd$_x$Te based heterostructures grown by molecular-beam epitaxy
Fizika i Tekhnika Poluprovodnikov, 45:7 (2011), 900–907
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Effect of annealing under anode oxide on the variation of surface composition and conversion of conduction type for $p$-Cd$_{x}$Hg$_{1-x}$Te ($x\simeq0.2$) single crystals
Fizika i Tekhnika Poluprovodnikov, 26:2 (1992), 310–317
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High-efficiency phase hologram recording in chalcogenide films at elevated temperatures
Kvantovaya Elektronika, 7:5 (1980), 1110–1112
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