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Sheĭnkman Moisei Kivovich

Publications in Math-Net.Ru

  1. Coduction lasting relaxations due to photoinduced oxygen diffusion along intergrain boundaries in Cadmiom-Sulpphide films

    Fizika i Tekhnika Poluprovodnikov, 26:1 (1992),  95–101
  2. Ultrasound-stimulated structural changes in strained heterosystems

    Fizika Tverdogo Tela, 33:8 (1991),  2340–2344
  3. KINETICS OF DEGRADATION OF RED ALGAAS LIGHT-EMITTING-DIODES

    Zhurnal Tekhnicheskoi Fiziki, 61:2 (1991),  98–103
  4. Влияние отжига в парах собственных компонентов на поглощение света в области урбаховского края CdSe

    Fizika i Tekhnika Poluprovodnikov, 25:11 (1991),  1946–1951
  5. Образование структуры, ответственной за аномальную температурную зависимость проводимости грани (0001) кристаллов CdS

    Fizika i Tekhnika Poluprovodnikov, 25:9 (1991),  1629–1633
  6. Влияние ультразвуковой обработки на экситонную и примесную люминесценцию CdTe

    Fizika i Tekhnika Poluprovodnikov, 25:7 (1991),  1243–1245
  7. Механизмы изменения электрических и фотоэлектрических свойств монокристаллов твердых растворов Zn$_{x}$Cd$_{1-x}$Te под действием ультразвука

    Fizika i Tekhnika Poluprovodnikov, 25:3 (1991),  409–412
  8. ELECTROPHYSICAL CHARACTERISTICS OF LOW-THRESHOLD (IN=1,3 MA, T=300-K) QUANTUM-DIMENSIONAL ALGAAS-LASER DIODE WITH OVERGROWN HETEROSTRUCTURE MANUFACTURED BY LOW-TEMPERATURE LIQUID-PHASE EPITAXY TECHNIQUE

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 17:3 (1991),  4–8
  9. Инжекционно-стимулированная трансформация спектров люминесценции зеленых GaP : N-светодиодов

    Fizika i Tekhnika Poluprovodnikov, 24:8 (1990),  1337–1348
  10. Нестабильность проводимости пленок сульфида кадмия, обусловленная фотостимулированной диффузией кислорода

    Fizika i Tekhnika Poluprovodnikov, 24:2 (1990),  388–390
  11. VOLUME CHARACTERISTICS OF OVERGREW QUANTUM-DIMENSIONAL ALGAAS LASERS, PREPARED BY THE LOW-TEMPERATURE LIQUID-PHASE EPITAXY METHOD

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 16:15 (1990),  56–59
  12. PHOTOSTIMULATED TRANSFORMATION OF EL2 LUMINESCENCE OF SELF-COMPENSATED GALLIUM-ARSENIDE

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 16:2 (1990),  40–43
  13. ULTRASONIC EFFECT ON POINTED DEFECTS IN SI-SIO2 SYSTEMS

    Zhurnal Tekhnicheskoi Fiziki, 59:8 (1989),  131–134
  14. Новый «электронный» механизм энергетической релаксации локальных колебаний сильно возбужденных дефектов

    Fizika i Tekhnika Poluprovodnikov, 23:12 (1989),  2232–2234
  15. Кинетика инжекционно-стимулированного преобразования дефектов в светоизлучающих GaAs : Si-структурах

    Fizika i Tekhnika Poluprovodnikov, 23:9 (1989),  1529–1538
  16. EFFECT OF THE CD EMISSION FROM THE CDTE CRYSTAL-SURFACE DURING THEIR DEFORMATION

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 15:16 (1989),  16–18
  17. STUDY OF ULTRASONIC TREATMENT EFFECT ON ELECTROPHYSICAL PARAMETERS OF LIGHT-EMITTING DOUBLE HETERO-STRUCTURES BASED ON GAAS-ALGAAS

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 15:15 (1989),  28–34
  18. Спектральные характеристики светодиодов Au$-$ZnS

    Fizika i Tekhnika Poluprovodnikov, 22:11 (1988),  1915–1918
  19. Механизм прохождения прямого тока в электролюминесцентных диодах Au$-$ZnS

    Fizika i Tekhnika Poluprovodnikov, 22:9 (1988),  1651–1656
  20. CERTAIN CAUSES OF INSTABILITY OF GAP-N LIGHTDIODES

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:18 (1988),  1710–1716
  21. ACTIVATION TYPE OF OPTICAL-REDUCTION OF LUMINESCENCE OF EL-2 CENTERS IN GAAS

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:12 (1988),  1067–1071
  22. Effect of ultrasonic loading on the acoustic and electrical characteristics of $\mathrm{CdS}$

    Fizika Tverdogo Tela, 29:4 (1987),  1135–1140
  23. Conduction in heavily defected $\beta$-$(\mathrm{BEDT}$–$\mathrm{TTF})_{2}\mathrm{I}_{3}$

    Fizika Tverdogo Tela, 29:3 (1987),  884–887
  24. Mechanism of Photoinduced Dissociation of DA Pairs in CdS Crystals and CdS$_{x}$Se$_{1-x}$ Solid Solutions

    Fizika i Tekhnika Poluprovodnikov, 21:3 (1987),  400–403
  25. Acoustostimulated relaxation of inner mechanic tensions in heterostructures

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:21 (1987),  1310–1313
  26. Dependence of kinetics of light-diode $Ga\,P:N$, $Zn-O$ degradation on the intensity of red band luminescence

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:20 (1987),  1221–1227
  27. Effect of ultrasound treatment on volt-ampere and noise characteristics of tunnel-diodes from $Ga\,As$

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:16 (1987),  1009–1013
  28. Mechanism of Variation of Cadmium-Sulphide Photoelectric and Luminescence Properties Stimulated by Ultrasound

    Fizika i Tekhnika Poluprovodnikov, 20:10 (1986),  1861–1867
  29. Symmetry and Model of a Complex Center of Polarized Photoluminescence and Thermoluminescence in GaP Single Crystals

    Fizika i Tekhnika Poluprovodnikov, 20:10 (1986),  1791–1800
  30. Transformation of Deep Centers during Degradation of GaP$\langle$N, Zn$-$O$\rangle$ Light-Emitting Diodes

    Fizika i Tekhnika Poluprovodnikov, 20:4 (1986),  701–707
  31. Radiative Recombination on Donor-Acceptor Pairs in the Space-Charge Region of Au-ZnS Diodes

    Fizika i Tekhnika Poluprovodnikov, 20:4 (1986),  619–624
  32. Photoinduced change in the sound rate in centrosymmetric crystals of the outer electric-field

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:18 (1986),  1134–1137
  33. $In\,Ga\,As:Si$ lightdiode electric and luminescent characteristic transformation, stimulated by ultrasound

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:2 (1986),  76–81
  34. Flash luminescence complex center in electron irradiated $\mathrm{CdS}$ single crystals

    Fizika Tverdogo Tela, 27:7 (1985),  1921–1928
  35. Polarized luminescence of deep centers in $\mathrm{GaAs}:\mathrm{Sn}(\mathrm{Te})$ single crystals

    Fizika Tverdogo Tela, 27:3 (1985),  748–756
  36. Auger Interaction of Electrons with Complexes of Point Centers in Some A$^{\text{III}}$B$^{\text{V}}$ Semiconductors. II. Comparison of Theory and Experiment

    Fizika i Tekhnika Poluprovodnikov, 19:12 (1985),  2139–2144
  37. Auger Interaction of Electrons with Complexes of Point Centers in Some A$^{\text{III}}$B$^{\text{V}}$ Semiconductors. I. Theory

    Fizika i Tekhnika Poluprovodnikov, 19:12 (1985),  2131–2138
  38. Quantum Diffusion of Defects in Excited States

    Fizika i Tekhnika Poluprovodnikov, 19:9 (1985),  1577–1584
  39. Ultrasonic ionization of deep centers in zinc-sulfide

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:21 (1985),  1315–1320
  40. Holographic gratings in CdS:Cu crystals with a diffraction efficiency dependent on the readout beam intensity

    Kvantovaya Elektronika, 12:3 (1985),  603–605
  41. Defect formation in solids by decay of electronic excitations

    UFN, 147:3 (1985),  523–558
  42. Детальные механизмы электронных переходов краевого излучения в широкозонных соединениях A$^{\text{II}}$B$^{\text{VI}}$

    Fizika i Tekhnika Poluprovodnikov, 18:10 (1984),  1788–1794
  43. Mechanism of «Red»-Luminescence Flash in CdS Single Crystals Irradiated by Electrons

    Fizika i Tekhnika Poluprovodnikov, 18:2 (1984),  305–311
  44. TRANSFORMATION OF LUMINESCENT AND ACOUSTIC CHARACTERISTICS OF CDS MONOCRYSTALS, STIMULATED WITH ULTRA-SONIC OSCILLATIONS

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 10:20 (1984),  1243–1247
  45. Влияние магнитного поля на ход ионизационных процессов, обусловленных электронами верхних долин $c$-зоны в GaAs

    Fizika i Tekhnika Poluprovodnikov, 17:11 (1983),  2093–2095
  46. Новая серия краевого излучения CdS в электрическом поле

    Fizika i Tekhnika Poluprovodnikov, 17:11 (1983),  2086–2088
  47. Излучательная и безызлучательная рекомбинация сульфида кадмия при низкотемпературной пластической деформации

    Fizika i Tekhnika Poluprovodnikov, 17:10 (1983),  1835–1840
  48. Особенности отрицательных фотоэффектов в кристаллах TlGaSe$_{2}$

    Fizika i Tekhnika Poluprovodnikov, 17:10 (1983),  1787–1790
  49. Особенности примесной люминесценции твердых растворов на основе селенидов и теллуридов кадмия

    Fizika i Tekhnika Poluprovodnikov, 17:8 (1983),  1454–1458
  50. Two parallel carrier capture mechanisms for a single recombination centre

    Dokl. Akad. Nauk SSSR, 167:4 (1966),  795–798
  51. The constants of recombination centres in cadmium sulfide as determined by the kinetics of infrared quenching of photocurrent

    Dokl. Akad. Nauk SSSR, 161:6 (1965),  1310–1312
  52. The shape of the spectral distribution of photoconductance by single crystals of $\mathrm{CdS}$

    Dokl. Akad. Nauk SSSR, 114:6 (1957),  1203–1205

  53. О XX Международной конференции по физике полупроводников

    Fizika i Tekhnika Poluprovodnikov, 25:7 (1991),  1263–1273
  54. Vadim Evgen'evich Lashkarev (obituary)

    UFN, 117:2 (1975),  377–378

© Steklov Math. Inst. of RAS, 2026