Ulin Vladimir Petrovich

Publications in Math-Net.Ru

1. Gold on surface of А$^{\mathrm{III}}$В$^{\mathrm{V}}$ crystals: effects of catalytic dissociation dissociation and anisotropic imbedding
   
   Fizika i Tekhnika Poluprovodnikov, 59:7 (2025),  414–422
2. Chemical preparation of gold nanoclusters on GaP (001) surface and spectroscopy of their localized plasmons
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:9 (2025),  14–17
3. Limiting thickness of pore walls formed in processes of anode etching of heavily doped semiconductors
   
   Zhurnal Tekhnicheskoi Fiziki, 93:2 (2023),  281–285
4. Finding the wedge-shaped Au nanoclusters at the surface of GaAs and investigating them with the polarization spectroscopy of plasmons
   
   Fizika i Tekhnika Poluprovodnikov, 57:6 (2023),  484–490
5. Effect of chemical passivation of GaAs(001) surface on anisotropy and orientation of gold nanoclusters formed on it and their plasmons
   
   Fizika i Tekhnika Poluprovodnikov, 56:7 (2022),  613–617
6. Silicon monoxide carbonized by fluorocarbon as a composite material for anodes of lithium-ion batteries
   
   Zhurnal Tekhnicheskoi Fiziki, 91:9 (2021),  1381–1392
7. Erratum to: Effect of Conductivity Type and Doping Level of Silicon Crystals on the Size of Formed Pore Channels during Anodic Etching in Hydrofluoric Acid Solutions
   
   Zhurnal Tekhnicheskoi Fiziki, 91:2 (2021),  367
8. Formation of silicon nanoclusters upon disproportionation of silicon monoxide
   
   Fizika i Tekhnika Poluprovodnikov, 55:4 (2021),  373–387
9. Interaction of fluorocarbon with silicon monoxide and processes of SiC nanowire formation
   
   Fizika i Tekhnika Poluprovodnikov, 54:8 (2020),  753–765
10. The effect of thermal treatment on properties of composite silicon–carbon anodes for lithium-ion batteries
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:3 (2020),  14–18
11. Effect of conductivity type and doping level of silicon crystals on the size of formed pore channels during anodic etching in hydrofluoric acid solutions
    
    Zhurnal Tekhnicheskoi Fiziki, 89:10 (2019),  1575–1584
12. Weakly ordered nanostructured silver disilicate and its colloidal solutions: preparation and properties
    
    Zhurnal Tekhnicheskoi Fiziki, 89:6 (2019),  938–947
13. Fluorocarbon carbonization of nanocrystalline silicon
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:13 (2019),  29–32
14. Liquid-metal field electron source based on porous GaP
    
    Zhurnal Tekhnicheskoi Fiziki, 87:9 (2017),  1416–1422
15. Sensitivity of energy-packed compounds based on superfine and nanoporous silicon to pulsed electrical treatments
    
    Fizika i Tekhnika Poluprovodnikov, 51:4 (2017),  501–506
16. Anodic processes in the chemical and electrochemical etching of Si crystals in acid-fluoride solutions: Pore formation mechanism
    
    Fizika i Tekhnika Poluprovodnikov, 51:4 (2017),  481–496
17. A study of the electrical properties of the porous GaP (111) surface
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:22 (2016),  39–48
18. Epitaxial layers of nickel fluoride on Si(111): Growth and stabilization of the orthorhombic phase
    
    Fizika Tverdogo Tela, 57:8 (2015),  1610–1615
19. Dark current-voltage characteristic of triple-junction solar cells: Their relation with the efficiency and the influence of passivating treatments
    
    Zhurnal Tekhnicheskoi Fiziki, 84:6 (2014),  92–97
20. Porous silicon and its applications in biology and medicine
    
    Zhurnal Tekhnicheskoi Fiziki, 84:1 (2014),  67–78
21. Surface of porous silicon under hydrophilization and hydrolytic degradation
    
    Fizika i Tekhnika Poluprovodnikov, 48:9 (2014),  1243–1248
22. Organic light-emitting diodes based on polyvinylcarbazole films doped with polymer nanoparticles
    
    Fizika Tverdogo Tela, 55:3 (2013),  617–621
23. Reflectance anisotropy spectroscopy of metal nanoclusters formed on semiconductor surface
    
    Pis'ma v Zh. Èksper. Teoret. Fiz., 98:10 (2013),  687–692
24. Electron auger spectroscopy and reflectance anisotropy spectroscopy of monolayer nitride films on (001) surfaces of GaAs and GaSb crystals
    
    Fizika i Tekhnika Poluprovodnikov, 46:11 (2012),  1463–1467
25. Nitride chemical passivation of a GaAs (100) Surface: Effect on the electrical characteristics of Au/GaAs surface-barrier structures
    
    Fizika i Tekhnika Poluprovodnikov, 45:12 (2011),  1637–1641
26. Study of processes of self-catalyzed growth of gaas crystal nanowires by molecular-beam epitaxy on modified Si (111) surfaces
    
    Fizika i Tekhnika Poluprovodnikov, 45:4 (2011),  441–445
27. Свойства и особенности кристаллизации эпитаксиальных слоев GaAs, выращенных на подложках Si(100) методом двухстадийного осаждения в МОС гидридном процессе
    
    Fizika i Tekhnika Poluprovodnikov, 25:6 (1991),  1022–1029
28. Механизм компенсации в многослойных структурах на основе нелегированного GaAs, выращенных из раствора-расплава в Ga
    
    Fizika i Tekhnika Poluprovodnikov, 23:6 (1989),  1058–1065
29. Widening transition layers in heterostructures, based on $In\,Ga\,As\,P$ solid-solutions, caused by elastic tensions
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:3 (1987),  132–136
30. Formation of transition layers in heterostructures based on $Ga\,As-Al\,As$ solid-solutions during the liquid-phase epitaxy
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:6 (1986),  335–341
31. Электрофизические характеристики метастабильных твердых растворов (Ge$_{2}$)$_{x}$(GaAs)$_{1-x}$ и влияние на них термообработки
    
    Fizika i Tekhnika Poluprovodnikov, 18:8 (1984),  1438–1445