Berkovits Vladimir Leonidovich

Publications in Math-Net.Ru

1. Gold on surface of А$^{\mathrm{III}}$В$^{\mathrm{V}}$ crystals: effects of catalytic dissociation dissociation and anisotropic imbedding
   
   Fizika i Tekhnika Poluprovodnikov, 59:7 (2025),  414–422
2. Chemical preparation of gold nanoclusters on GaP (001) surface and spectroscopy of their localized plasmons
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:9 (2025),  14–17
3. Finding the wedge-shaped Au nanoclusters at the surface of GaAs and investigating them with the polarization spectroscopy of plasmons
   
   Fizika i Tekhnika Poluprovodnikov, 57:6 (2023),  484–490
4. Effect of chemical passivation of GaAs(001) surface on anisotropy and orientation of gold nanoclusters formed on it and their plasmons
   
   Fizika i Tekhnika Poluprovodnikov, 56:7 (2022),  613–617
5. Optical and electronic properties of passivated InP(001) surfaces
   
   Fizika i Tekhnika Poluprovodnikov, 55:8 (2021),  644–648
6. Formation of stable charge regions in an array of germanium nanocrystallites inside SiO$_2$ using electrostatic force microscopy
   
   Zhurnal Tekhnicheskoi Fiziki, 85:5 (2015),  50–56
7. Reflectance anisotropy spectroscopy of metal nanoclusters formed on semiconductor surface
   
   Pis'ma v Zh. Èksper. Teoret. Fiz., 98:10 (2013),  687–692
8. Electron auger spectroscopy and reflectance anisotropy spectroscopy of monolayer nitride films on (001) surfaces of GaAs and GaSb crystals
   
   Fizika i Tekhnika Poluprovodnikov, 46:11 (2012),  1463–1467
9. Studying structure of thin copper phthalocyanine films by reflectance anisotropy spectroscopy
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 38:6 (2012),  68–76
10. Nitride chemical passivation of a GaAs (100) Surface: Effect on the electrical characteristics of Au/GaAs surface-barrier structures
    
    Fizika i Tekhnika Poluprovodnikov, 45:12 (2011),  1637–1641
11. Anisotropy of gallium-arsenide optical reflection in the range of fundamental-absorption edge
    
    Fizika i Tekhnika Poluprovodnikov, 26:7 (1992),  1264–1268
12. Потенциальные барьеры на поверхности $n$- и $p$-GaAs (100): кинетика движения поверхностного уровня Ферми при химической обработке
    
    Fizika i Tekhnika Poluprovodnikov, 25:8 (1991),  1406–1413
13. Исследование в сканирующем туннельном микроскопе поверхности арсенида галлия, пассивированной в водном растворе Na$_{2}$S
    
    Fizika i Tekhnika Poluprovodnikov, 25:3 (1991),  379–384
14. Изгиб зон в арсениде галлия при формировании омического контакта (омические исследования)
    
    Fizika i Tekhnika Poluprovodnikov, 24:6 (1990),  1031–1037
15. Влияние приповерхностного электрического поля на анизотропию оптического отарежения поверхности (110) арсенида галлия
    
    Fizika i Tekhnika Poluprovodnikov, 24:2 (1990),  353–358
16. Оптическое исследование закрепления уровня Ферми на поверхности (110) полупроводниковых соединений A$^{\text{III}}$B$^{\text{V}}$
    
    Fizika i Tekhnika Poluprovodnikov, 22:1 (1988),  66–71
17. Spectra of Optical Transitions between Eigen Electron States of the (110) Pure Surface of A$^{\text{III}}$B$^{\text{V}}$ Compounds
    
    Fizika i Tekhnika Poluprovodnikov, 21:3 (1987),  433–436
18. Oxidation of $Ga\,As(110)$ clean surface and fixing the Fermi level
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:13 (1987),  800–804
19. Optical-detection of physical and chemical sorption of oxygen on the clean surface of $Ga\,As (110)$
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:12 (1987),  709–713
20. Anisotropy in Optical Reflection of Cubic Semiconductors due to Surface Bend of Bands
    
    Fizika i Tekhnika Poluprovodnikov, 20:6 (1986),  1037–1041