Shastin Valerii Nikolaevich

Publications in Math-Net.Ru

1. Multi-phonon relaxation of the 1$s(T_2)$ triplet of neutral magnesium donors in silicon
   
   Fizika i Tekhnika Poluprovodnikov, 58:1 (2024),  7–13
2. Double magnesium donors as a potential active medium in the terahertz range
   
   Fizika i Tekhnika Poluprovodnikov, 57:6 (2023),  455–460
3. Optical excitation of spin-triplet states of two-electron donors in silicon
   
   Fizika i Tekhnika Poluprovodnikov, 57:5 (2023),  327–331
4. The mechanism of stimulated Raman scattering of light in silicon doped with helium-like donors
   
   Kvantovaya Elektronika, 53:5 (2023),  401–405
5. Detection of Ramsey oscillations in germanium doped with shallow donors upon the excitation of the $1s\to2p_0$ transition
   
   Pis'ma v Zh. Èksper. Teoret. Fiz., 116:3 (2022),  139–145
6. Photon echo in germanium with shallow donors
   
   Fizika i Tekhnika Poluprovodnikov, 56:8 (2022),  728–733
7. Quantitative analysis of valley–orbit coupling in germanium doped with group-V donors
   
   Fizika i Tekhnika Poluprovodnikov, 55:10 (2021),  901–907
8. Intervalley relaxation processes of shallow donor states in germanium
   
   Fizika i Tekhnika Poluprovodnikov, 55:9 (2021),  807–812
9. Relaxation of the excited states of arsenic in strained germanium
   
   Fizika i Tekhnika Poluprovodnikov, 54:10 (2020),  1145–1149
10. Electronic states of group V donors in germanium: variational calculation taking into account the short-range potential
    
    Fizika i Tekhnika Poluprovodnikov, 54:9 (2020),  938–944
11. Influence of uniaxial stress along [110] direction on relaxation of arsenic shallow donor states in germanium
    
    Fizika i Tekhnika Poluprovodnikov, 54:9 (2020),  918–921
12. Frequency tuning of terahertz stimulated emission under the intracenter optical excitation of uniaxially stressed Si:Bi
    
    Fizika i Tekhnika Poluprovodnikov, 54:8 (2020),  816–821
13. On the possibility of Ramsey interference in germanium doped with shallow impurities
    
    Fizika i Tekhnika Poluprovodnikov, 54:8 (2020),  807–811
14. Relaxation times and population inversion of excited states of arsenic donors in germanium
    
    Pis'ma v Zh. Èksper. Teoret. Fiz., 110:10 (2019),  677–682
15. On the intracenter relaxation of shallow antimony donors in strained germanium
    
    Fizika i Tekhnika Poluprovodnikov, 53:10 (2019),  1372–1377
16. Stimulated terahertz emission of bismuth donors in uniaxially strained silicon under optical intracenter excitation
    
    Fizika i Tekhnika Poluprovodnikov, 53:9 (2019),  1285–1288
17. Chemical shift and exchange interaction energy of the $1s$ states of magnesium donors in silicon. The possibility of stimulated emission
    
    Fizika i Tekhnika Poluprovodnikov, 53:9 (2019),  1263–1266
18. On the intracenter relaxation of shallow arsenic donors in stressed germanium. Population inversion under optical excitation
    
    Fizika i Tekhnika Poluprovodnikov, 52:12 (2018),  1469–1476
19. Low-temperature intracenter relaxation times of shallow donors in germanium
    
    Pis'ma v Zh. Èksper. Teoret. Fiz., 106:9 (2017),  555–560
20. Polarization of the induced THz emission of donors in silicon
    
    Fizika i Tekhnika Poluprovodnikov, 50:12 (2016),  1701–1705
21. Terahertz absorption and emission upon the photoionization of acceptors in uniaxially stressed silicon
    
    Fizika i Tekhnika Poluprovodnikov, 50:11 (2016),  1479–1483
22. Terahertz emission at impurity electrical breakdown in Si(Li)
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:20 (2016),  18–23
23. Terahertz-range spontaneous emission under the optical excitation of donors in uniaxially stressed bulk silicon and SiGe/Si heterostructures
    
    Fizika i Tekhnika Poluprovodnikov, 49:1 (2015),  15–20
24. Terahertz lasers based on intracentre transitions of group V donors in uniaxially deformed silicon
    
    Kvantovaya Elektronika, 45:2 (2015),  113–120
25. Stimulated emission on impurity – band optical transitions in semiconductors
    
    Kvantovaya Elektronika, 45:2 (2015),  105–112
26. Terahertz intracenter photoluminescence of silicon with lithium at interband excitation
    
    Pis'ma v Zh. Èksper. Teoret. Fiz., 100:12 (2014),  876–880
27. On the phonon-assisted relaxation of excited bismuth donor states in uniaxially stressed silicon
    
    Fizika i Tekhnika Poluprovodnikov, 48:8 (2014),  1044–1049
28. Shallow-donor lasers in uniaxially stressed silicon
    
    Fizika i Tekhnika Poluprovodnikov, 47:2 (2013),  199–205
29. Tunable narrowband laser that operates on interband transitions of hot holes in germanium
    
    Kvantovaya Elektronika, 20:2 (1993),  142–148
30. Перестройка спектра излучения лазера на $p$-Ge при одноосной деформации
    
    Fizika i Tekhnika Poluprovodnikov, 24:12 (1990),  2151–2154
31. Исследование $n$-HgTe в сильных электрических полях
    
    Fizika i Tekhnika Poluprovodnikov, 24:9 (1990),  1616–1617
32. Анизотропия валентной зоны и стимулированное излучение горячих дырок $p$-Ge в скрещенных электрическом и магнитном полях
    
    Fizika i Tekhnika Poluprovodnikov, 23:10 (1989),  1728–1736
33. FINE-STRUCTURE OF A SPECTRUM OF STIMULATED LONG-WAVE IR RADIATION OF RHO-GE IN STRONG E AND H FIELDS
    
    Zhurnal Tekhnicheskoi Fiziki, 57:9 (1987),  1847–1850
34. Directed stimulated laser-emission on $Ge$ hot holes
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:2 (1987),  65–68
35. Long-wavelength infrared laser utilizing hot holes in germanium
    
    Kvantovaya Elektronika, 14:4 (1987),  702–704
36. Rearranged laser of long-wave infrared-emission on germanium hot holes
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:16 (1985),  1000–1004
37. Photomagnetization of $\mathrm{CdCr}_{2}\mathrm{Se}_{4}$ magnetic semiconductor
    
    Fizika Tverdogo Tela, 25:12 (1983),  3706–3708
38. Observation of population inversion of holes in $\mathrm{Ge}$ in crossed $E$ and $H$ fields by the spontaneous far IR emission
    
    Dokl. Akad. Nauk SSSR, 267:2 (1982),  339–343