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Portnoĭ Efim Lazarevich

Publications in Math-Net.Ru

  1. Generation of picosecond pulses by lasers with distributed feedback at a wavelength of 1064 nm

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:7 (2020),  12–15
  2. Emission regimes of 1.06 $\mu$m spectral bandwidth two-sectional lasers with quantum dot based active layer

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:21 (2018),  30–39
  3. Mode-locked lasers with “thin” quantum wells in 1.55 $\mu$m spectral range

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:4 (2018),  95–102
  4. Switching between the mode-locking and Q-switching modes in two-section QW lasers upon a change in the absorber properties due to the Stark effect

    Fizika i Tekhnika Poluprovodnikov, 50:6 (2016),  843–847
  5. Emission spectra of a laser based on an In(Ga)As/GaAs quantum-dot superlattice

    Fizika i Tekhnika Poluprovodnikov, 49:10 (2015),  1379–1385
  6. Power increase in Q-switched two-sectional quantum well lasers due to Stark effect

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 41:20 (2015),  30–36
  7. RF linewidth in passively mode locked quantum well lasers

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 39:3 (2013),  41–48
  8. Polarization dependences of electroluminescence and absorption of vertically correlated InAs/GaAs QDs

    Fizika i Tekhnika Poluprovodnikov, 46:1 (2012),  96–102
  9. The effect of barrier width in coupled asymmetric double quantum well structure on passive mode-locking region of existence

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 38:7 (2012),  31–39
  10. Harmonic mode-locking in quantum dot lasers with tunnel-coupled waveguides

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 38:2 (2012),  25–31
  11. Room-temperature optical absorption in the InAs/GaAs quantum-dot superlattice under an electric field

    Fizika i Tekhnika Poluprovodnikov, 45:8 (2011),  1095–1101
  12. Passive mode-locked laser based on quantum dot superlattice

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 37:18 (2011),  31–36
  13. Features of mode locking in laser with quantum well in broad waveguide layer

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 36:22 (2010),  29–36
  14. Генерация пикосекундных (${\tau=1.7}$ пс) импульсов излучения в InGaAsP/InP (${\lambda=1.535}$ мкм) гетеролазере со сверхбыстрым насыщающимся поглотителем

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 18:3 (1992),  38–41
  15. CROSS-CORRELATIONAL MEASUREMENTS OF THE TIME PARAMETERS OF OPTICAL SIGNALS WITH THE AID OF A PICOSECOND SEMICONDUCTOR-LASER

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 17:18 (1991),  1–4
  16. EFFECT OF NONLINEAR AMPLIFICATION ON CHARACTERISTICS OF QUALITY MODULATION REGIME IN SEMICONDUCTING LASER WITH FAST SATURATED ABSORBERS

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 17:11 (1991),  49–54
  17. HIGH-SPEED PROPERTIES OF INGAASP-INP (LAMBDA=1.55 MU-M) ROS-LASERS WITH SHORT-WAVE TUNING

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 16:21 (1990),  61–65
  18. CONTACT-FREE ELECTROOPTICAL MEASUREMENT OF ULTRA-SHORT ELECTRIC SIGNALS VIA PICOSECOND SEMICONDUCTING LASERS

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 16:14 (1990),  84–89
  19. CHARACTERISTICS OF OBLITERATION OF WAVE-GUIDE PROFILE SURFACE IN INGAASP/INP ROS LASERS

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 16:8 (1990),  5–9
  20. LIFETIME OF NONEQUILIBRIUM CHARGE-CARRIERS IN PROTON-IRRADIATED GAAS

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 16:4 (1990),  89–93
  21. ELECTROOPTICAL GATING USING THE PICOSECOND INJECTION-LASER

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 16:2 (1990),  29–33
  22. SPATIAL CHARACTERISTICS OF ALGAAS-HETEROLASERS EMISSION WITH CURRENT LIMITATION IN THE INTERNAL RELIABILITY MODULATION REGIME

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 15:21 (1989),  81–86
  23. EFFECT OF THE SATURATING ABSORBER DOMAIN ON CHARACTERISTICS OF INGAASP/INP DFB-LASERS WITH STRONG SHORT-WAVE DETUNING

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 15:17 (1989),  47–51
  24. GENERATION AND STROBING OF PICOSECOND ELECTRIC PULSES BY DEVICES BASED ON THE USE OF SEMICONDUCTING LASER

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 15:13 (1989),  72–75
  25. GENERATION AND REGISTRATION OF PICOSECOND OPTICAL PULSES IN INGAASP/INP (LAMBDA= 1.5-1.6 MU-M) LASERS WITH PASSIVE QUALITY MODULATION

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 15:13 (1989),  6–9
  26. CHARACTERISTICS OF HETEROLASERS WITH A SATURATING ABSORBER OBTAINED BY THE DEEP IONIC IMPLANTATION

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 15:11 (1989),  44–48
  27. INTERIOR GENERATION OF 2-ND HARMONICS IN INGAASP/INP (LAMBDA=1,55 MU-M) SEPARATE CONFINEMENT LASERS

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 15:9 (1989),  67–72
  28. Динамика излучения гетеролазера с насыщающимся поглотителем, полученным глубокой имплантацией ионов кислорода

    Fizika i Tekhnika Poluprovodnikov, 22:7 (1988),  1208–1212
  29. Время жизни неравновесных носителей заряда в $p$-GaAs, облученном ионами кислорода

    Fizika i Tekhnika Poluprovodnikov, 22:2 (1988),  352–354
  30. LIGHT-ABSORPTION IN GAAS THIN-FILMS, IMPLANTED BY NITROGEN AND OXYGEN HIGH-ENERGY IONS

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:20 (1988),  1870–1875
  31. DFB-GENERATION IN INGAASP/INP-LASERS WHERE (LAMDA=1.5-1.6 MU-M) WITH A COMPOUND ACTIVE LAYER

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:12 (1988),  1082–1088
  32. CHARACTERISTICS OF THE GENERATION IN INGAASP/INP HIGHLY DETUNED ROS-LASERS

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:3 (1988),  267–273
  33. Continuous-wave distributed-feedback InGaAsP (λ = 1.55 μm) injection heterolasers

    Kvantovaya Elektronika, 15:11 (1988),  2196–2198
  34. RADIATIVE CHARACTERISTICS OF LASERS AND SUPERLUMINESCENT DIODES WITH GRADIENT WAVE-GUIDES

    Zhurnal Tekhnicheskoi Fiziki, 57:5 (1987),  913–917
  35. Heteroepitaxial $Al_{x}\,Ga_{1-x}\,P$ wave-guides with parabolic shape of the index of refraction for hybride integral-optical systems

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:18 (1987),  1098–1103
  36. Spike regime in distributed feedback heterolasers

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:10 (1987),  601–604
  37. Heterolasers with distributed feedback ($\lambda=1.55$ mu-m), operating in continuous regime at room-temperature

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:9 (1987),  513–517
  38. Time characteristics of $In\,Ga\,As\,P/In\,P$ emission of injection-lasers with quantum-dimensional active layers, obtained by the liquid epitaxy method

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:3 (1987),  141–146
  39. INFLUENCE OF GROWING CONDITIONS ON PARAMETERS OF MULTIWAVE DHS-LASERS

    Zhurnal Tekhnicheskoi Fiziki, 56:6 (1986),  1142–1149
  40. LIQUID EPITAXY, CONTROLLED BY TEMPERATURE AND CURRENT CHANGES (LECTCC)

    Zhurnal Tekhnicheskoi Fiziki, 56:2 (1986),  353–360
  41. Threshold Characteristics of an Injection Laser with One Lightly Doped Heterojunction

    Fizika i Tekhnika Poluprovodnikov, 20:11 (1986),  2061–2064
  42. Experimental Observation of Size-Quantization Effects in Heterolaser Structures with Random Variations of Quantum-Size Active-Layer Thickness

    Fizika i Tekhnika Poluprovodnikov, 20:7 (1986),  1222–1226
  43. Generation of picosecond pulses in hetero-lasers with a modulated durability

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:18 (1986),  1093–1098
  44. Index of $Ga\,In\,As\,P$ solid-solution refraction on the wavelength of laser generation

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:13 (1986),  827–831
  45. Continuous single-mode injection $Ga\,Al\,As$ heterolasers, obtained by gasophase and liquid-phase epitaxial hybrid technology

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:10 (1986),  577–582
  46. Injection heterolasers $Jn\,Ga\,As\,P/Jn\,P$ ($\lambda=1,5$-mu-m) with the distributed feedback obtained by liquid-phase and gaseous epitaxies

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:5 (1986),  296–300
  47. Investigation of temperature stability of distributed reflection spectral bands in monolith-hybrid Bragg heterolasers

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:5 (1986),  268–274
  48. Influence of random changes in the quantum-dimensional active layer thickness on heterolaser emitting characteristics

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:4 (1986),  205–210
  49. INJECTION INGAASP/INP HETEROLASER WITH DISTRIBUTED FEEDBACK OBTAINED BY INTERFERENCE LASER ANNEALING

    Zhurnal Tekhnicheskoi Fiziki, 55:10 (1985),  2034–2036
  50. MULTIWAVE LASER EMITTERS BASED ON ALXGA(1-X)AS SOLID-SOLUTIONS

    Zhurnal Tekhnicheskoi Fiziki, 55:10 (1985),  1962–1966
  51. Dispersion of the refractive-index and radiofrequency spectra of heterolaser intramode beating in an external dispersion resonator

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:22 (1985),  1362–1365
  52. Phase principles of light-reflection by the Bregg mirror, caused by the dielectric permittivity jump on its boundary

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:16 (1985),  989–993
  53. Epitaxy $In\,Ga\,As\,P/In\,P$ from the migrating limited liquid-phase volume

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:16 (1985),  961–968
  54. Spectral and time characteristics of monolithic hybrid heterolaser emissions with Bragg mirrors

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:10 (1985),  606–611
  55. Investigation of injection Bragg heterolasers with high-temperature stability of the emission wave-length

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:9 (1985),  524–530
  56. Non-conformity of lattice periods and the intensity of photoluminescence in $Ga\,In\,Sb\,As/Ga\,Sb$ heterocompositions

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:4 (1985),  193–197
  57. Optical commutation of the high-frequency signal by the semiconductor-laser emission

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:1 (1985),  53–56
  58. DIFFUSION SUBSTANCE TRANSFER IN CRYSTALLIZED MULTI-COMPONENT SOLUTION-FUSION

    Zhurnal Tekhnicheskoi Fiziki, 54:10 (1984),  2004–2010
  59. CONCENTRATING HOLOGRAPHIC DIFFRACTION LATTICE .2. EXPERIMENTAL RESULTS

    Zhurnal Tekhnicheskoi Fiziki, 54:10 (1984),  1948–1955
  60. CONCENTRATING HOLOGRAPHIC DIFFRACTION LATTICE .1. THEORY

    Zhurnal Tekhnicheskoi Fiziki, 54:10 (1984),  1942–1947
  61. SPECTRAL DEPENDENCY OF REFLECTION COEFFICIENTS OF BRAGG MIRRORS

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 10:15 (1984),  945–949
  62. STUDY OF PICOSECOND PHOTOCONDUCTIVITY IN INP POLYINSULATING AT LOW-LEVELS OF OPTICAL STIMULATION

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 10:6 (1984),  342–345
  63. Влияние относительного спектрального положения полосы усиления и линии генерации на динамику излучения гетеролазера с брэгговскими зеркалами

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 10:3 (1984),  133–138
  64. POLARIZATION PECULIARITIES OF COHERENT EMISSION, GENERATED IN MULTILAYERED HETEROSTRUCTURES

    Zhurnal Tekhnicheskoi Fiziki, 53:9 (1983),  1843–1845
  65. POLARIZATION EFFECTS IN HETEROLASERS WITH DISTRIBUTED REVERSE COUPLING

    Zhurnal Tekhnicheskoi Fiziki, 53:8 (1983),  1560–1567
  66. К вопросу о механизмах лазерного отжига полупроводников

    Fizika i Tekhnika Poluprovodnikov, 17:12 (1983),  2224–2228
  67. Интерференционный лазерный отжиг полупроводников

    Fizika i Tekhnika Poluprovodnikov, 17:2 (1983),  235–241
  68. О возможностях метода фотолюминесценции в исследовании лазерной аморфизации арсенида галлия

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 9:21 (1983),  1298–1301
  69. Полупроводниковый лазер (${\lambda=1.55}$ мкм) с распределенной обратной связью в первом порядке, полученной импульсным лазерным отжигом

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 9:21 (1983),  1294–1297
  70. Полупроводниковая волноводная гетероструктура монолитно-интегрированная с оптической схемой интерференционной засветки

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 9:17 (1983),  1047–1050
  71. Перестраиваемые полупроводниковые лазеры с распределенной обратной связью и накачкой инжекционным гетеролазером

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 9:17 (1983),  1043–1046
  72. Эпитаксиальная кристаллизация напыленных слоев кремния на подложках GaP в условиях интерференционного лазерного отжига

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 9:14 (1983),  850–853
  73. Инжекционный брэгговский гетеролазер с высокой температурной стабильностью длины волны излучения

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 9:8 (1983),  456–460

© Steklov Math. Inst. of RAS, 2026