Dolginov L M

Publications in Math-Net.Ru

1. Continuous-wave lasing at room temperature in InGaSbAs/GaAlSbAs injection heterostructures emitting in the spectral range 2.2–2.4 μm
   
   Kvantovaya Elektronika, 15:11 (1988),  2171–2172
2. Injection InGaSbAs laser emitting at 2.4μ (300K)
   
   Kvantovaya Elektronika, 13:10 (1986),  2119–2120
3. Injection InGaSbAs lasers emitting radiation of wavelengths 1.9–2.3μ at room temperature
   
   Kvantovaya Elektronika, 12:6 (1985),  1309–1311
4. Optical properties of $\mathrm{Ga}_{x}\mathrm{In}_{1-x}\mathrm{As}_{y}\mathrm{Sb}_{1-y}$
   
   Fizika Tverdogo Tela, 26:1 (1984),  145–150
5. LOW-THRESHOLD INJECTION-LASERS BASED ON THICK GAINPAS/INP (1.2-1.6 MKM) HETEROSTRUCTURES
   
   Zhurnal Tekhnicheskoi Fiziki, 54:3 (1984),  551–557
6. Injection InGaAsP/lnP lasers with a threshold current density of 0.5 kA/cm² at 300 К
   
   Kvantovaya Elektronika, 11:4 (1984),  645–646
7. Three-layer waveguide InGaAsP/lnP injection lasers
   
   Kvantovaya Elektronika, 11:3 (1984),  631–633
8. Temperature dependences of the emission characteristics of GaInPAs/InP injection lasers
   
   Kvantovaya Elektronika, 9:9 (1982),  1902–1904
9. Continuous-wave injection lasers emitting in the 1.5–1.6 μ range
   
   Kvantovaya Elektronika, 9:9 (1982),  1749
10. Mode composition of radiation from mesastripe GalnPAs–lnP heterojunction lasers buried in InP or GalnPAs
    
    Kvantovaya Elektronika, 8:9 (1981),  1994–1996
11. Buried mesastripe cw room-temperature $GaInPAs/InP$ heterojunction lasers in the $1,24-1,28\mu m$ wavelength range
    
    Kvantovaya Elektronika, 7:9 (1980),  1990–1992
12. Properties of AIGaAsSb–GaSb heterojunction injection lasers in the 1.4–1.8 $\mu m$ wavelength range
    
    Kvantovaya Elektronika, 7:1 (1980),  91–96
13. High-efficiency GaInPAs/InP light-emitting diodes
    
    Kvantovaya Elektronika, 5:11 (1978),  2488–2489
14. Injection heterolaser based on InGaAsSb four-component solid solution
    
    Kvantovaya Elektronika, 5:3 (1978),  703–704
15. Efficient room-temperature stimulated emission from a Ga_xln_1–xAs_ySb_1–y semiconductor laser in the spectral range 1.8–2.4 μ
    
    Kvantovaya Elektronika, 5:1 (1978),  126–128
16. Multicomponent solid solutions of IV-VI compounds
    
    Kvantovaya Elektronika, 4:4 (1977),  904–907
17. Spontaneous and stimulated emission from Ga_xIn_1–xAs, GaAs_xSb_1–x, and Ga_xIn_1–xAs_1–yP_y solid solutions
    
    Kvantovaya Elektronika, 3:11 (1976),  2490–2494
18. Multicomponent semiconductor solid solutions and their laser applications (review)
    
    Kvantovaya Elektronika, 3:7 (1976),  1381–1393
19. Investigation of Al_xGa_1–xAs injection heterolasers emitting visible radiation
    
    Kvantovaya Elektronika, 3:5 (1976),  1080–1084
20. Luminescence and stimulated emission from Ga_xln_1–xAs_ySb_1–y
    
    Kvantovaya Elektronika, 3:4 (1976),  932–934
21. New uncooled injection heterolaser emitting in the 1.5–1.8 μ range
    
    Kvantovaya Elektronika, 3:2 (1976),  465–466
22. Heterojunction lasers made of Ga_xIn_1–xAs_yP_1–y and Al_xGa_1–xSb_yAs_1–y solid solutions
    
    Kvantovaya Elektronika, 1:10 (1974),  2294–2295
23. Parameters of electron-beam-pumped Al_xGa_1–xAs lasers in the visible part of the spectrum
    
    Kvantovaya Elektronika, 1:1 (1974),  178–180


24. Лозовский В. Н., Лунин Л. С., Попов В. П. Зонная перекристаллизация градиентом температуры полупроводниковых материалов. М.: Металлургия, 1987. 233 с.
    
    Fizika i Tekhnika Poluprovodnikov, 22:7 (1988),  1334–1335