Shokhudzhaev N

Publications in Math-Net.Ru

1. Injection lasers made from graded-interface GalnAsP/lnP heterostructures
   
   Kvantovaya Elektronika, 20:3 (1993),  219–221
2. Service life characteristics of GaInAsP/InP heterostructure lasers emitting short-wavelength radiation
   
   Kvantovaya Elektronika, 15:2 (1988),  283–285
3. Influence of anlsotropic deformation on radiative characteristics of GaInAsP/InP injection lasers. II. Spectral characteristics and discussion
   
   Kvantovaya Elektronika, 13:8 (1986),  1610–1616
4. Influence of anisotropic deformation on the radiative characteristics of GaInAsP/InP injection lasers. I. Lasing threshold, polarization, and wattampere characteristic
   
   Kvantovaya Elektronika, 13:8 (1986),  1603–1609
5. Continuous-wave InGaAsP/InP injection lasers emitting short wavelengths
   
   Kvantovaya Elektronika, 13:1 (1986),  170–171
6. Reduction of the threshold current of InGaAsP/lnP heterolasers by unidirectional compression
   
   Kvantovaya Elektronika, 11:8 (1984),  1665–1667
7. Fabrication and investigation of GaInPAs/InP heterolasers
   
   Kvantovaya Elektronika, 9:12 (1982),  2402–2406
8. Diode simulators of solid-state lasers
   
   Kvantovaya Elektronika, 6:12 (1979),  2617–2618
9. Investigation of InP-lnGaPAs heterojunction lasers and light-emitting diodes operating in the 1.0–1.2 μ range
   
   Kvantovaya Elektronika, 6:11 (1979),  2436–2439
10. Characteristics of n-GaP_x As_1–x–pGa_1–yAl_yP_xAs_1–x heterojunction lasers emitting visible radiation
    
    Kvantovaya Elektronika, 4:8 (1977),  1821–1823
11. Investigation of Al_xGa_1–xAs injection heterolasers emitting visible radiation
    
    Kvantovaya Elektronika, 3:5 (1976),  1080–1084
12. Characteristics of diffused InP and lnP_xAs_1–x laser diodes
    
    Kvantovaya Elektronika, 2:4 (1975),  814–819
13. lnP_0.92As_0.08 injection laser
    
    Kvantovaya Elektronika, 1:8 (1974),  1875–1877