Poltoratskiĭ Éduard Alekseevich

Publications in Math-Net.Ru

1. Vacuum field-emission triode based on electron multiplier concentrator
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 36:20 (2010),  15–20
2. Catalytic growth of nanostructures from carbonaceous substrates: Properties and model notions
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 36:4 (2010),  48–53
3. Electron multiplier concentrator for integrated field-emission electronics
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 36:1 (2010),  44–51
4. Substrate parasite control in field-effect transistors on gallium arsenide
   
   Fizika i Tekhnika Poluprovodnikov, 26:5 (1992),  794–800
5. Частотная дисперсия крутизны в полевых транзисторах на основе $\delta$-легированных структур
   
   Fizika i Tekhnika Poluprovodnikov, 25:11 (1991),  1870–1876
6. Температурная зависимость эффекта управления транзистором через полуизолирующую подложку в интегральных схемах на арсениде галлия
   
   Fizika i Tekhnika Poluprovodnikov, 25:9 (1991),  1667–1670
7. EFFECT OF SCHOTTKY-BARRIER PROPERTIES ON FREQUENCY DISPERSION OF TRANSCONDUCTANCE OF FIELD TRANSISTOR WITH SCHOTTKY-BARRIER
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 17:14 (1991),  78–80
8. MECHANISMS OF PARASITIC CONTROL ON SUBSTRATE IN GAAS FIELD SCHOTTKY TRANSISTORS
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 17:14 (1991),  36–38
9. Физическая модель эффекта управления полевым транзистором через полуизолирующую подложку
   
   Fizika i Tekhnika Poluprovodnikov, 24:12 (1990),  2111–2116
10. Optimal self-compression of multisoliton pulses in an optical fiber
    
    Kvantovaya Elektronika, 16:9 (1989),  1925–1930
11. CHARACTERISTICS OF ELECTROPHYSICAL AND STRUCTURAL-PROPERTIES OF INSULATING LAYERS IN THE GAAS-ALAS SYSTEM OBTAINED BY THE HYDRID MOS METHOD
    
    Zhurnal Tekhnicheskoi Fiziki, 56:11 (1986),  2245–2247
12. Modulation of Negative Space Charge in the Insulator–Semiconductor Structures Produced in a GaAs$-$AlAs System
    
    Fizika i Tekhnika Poluprovodnikov, 20:10 (1986),  1782–1786
13. Influence of Composition on Electrohysical Properties of Al$_{x}$Ga$_{1-x}$As Insulating Layers Produced by MOC Hydride Method
    
    Fizika i Tekhnika Poluprovodnikov, 20:9 (1986),  1565–1571
14. Trapping of Carriers in Insulator–Semiconductor Structures Produced by MOS Hydride Method in the GaAs-AlAs System
    
    Fizika i Tekhnika Poluprovodnikov, 20:4 (1986),  757–759
15. Electrophysical Properties of Ga$_{1-x}$Al$_x$As Solid-Solution Insulating Layers Produced by MOS Hydride Method
    
    Fizika i Tekhnika Poluprovodnikov, 20:4 (1986),  594–602
16. FIELD TRANSISTOR WITH INSULATED SEALS
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 10:7 (1984),  420–422
17. Распространение света в прямоугольных активных волноводах
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 9:15 (1983),  945–950
18. Распространение света в активных связанных волноводах
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 9:15 (1983),  941–945