Shveĭkin V I

Publications in Math-Net.Ru

1. RESOURCE CHARACTERISTICS OF SEPARATE OPTICAL AND ELECTRON CONFINEMENT LASERS OBTAINED BY LOW-TEMPERATURE LIQUID-PHASE EPITAXY TECHNIQUE
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 17:3 (1991),  89–93
2. Laser diode emitting cw 663 nm radiation at room temperature
   
   Kvantovaya Elektronika, 18:7 (1991),  824–825
3. Low-threshold buried 1.3-μm injection lasers with two-channel lateral confinement and n-type InP substrates
   
   Kvantovaya Elektronika, 16:3 (1989),  457–462
4. MODULATION IN THE BAND UP TO 5-HECTOHERTZ OF INGAASP LASER ON THE P-TYPE SUBSTRATE WITH SEMIINSULATING LAYERS
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:17 (1988),  1580–1583
5. Miniature solid-state laser with semiconductor pumping and frequency conversion, emitting in the ultraviolet spectral range
   
   Kvantovaya Elektronika, 15:7 (1988),  1323–1324
6. High-efficiency solid-state laser emitting green light
   
   Kvantovaya Elektronika, 15:5 (1988),  962–963
7. Radiation sources for fiber-optic communication lines with wavelength-division multiplexing of data channels in the range 1.3–1.6 μm
   
   Kvantovaya Elektronika, 15:4 (1988),  702–704
8. CONTINUOUS GENERATION AND HIGH-TEMPERATURE LASER TESTS UNDER 100-DEGREES-C BASED ON INGAASP/INP
   
   Zhurnal Tekhnicheskoi Fiziki, 57:8 (1987),  1570–1574
9. Study of retuned characteristics of single-frequency semiconducting lasers with the spectral high-resolution
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:12 (1987),  718–723
10. Low-threshold InGaAsP/InP injection lasers
    
    Kvantovaya Elektronika, 14:11 (1987),  2201–2202
11. Injection heterolasers and integrated laser-photodetector pairs, prepared by microcleaving
    
    Kvantovaya Elektronika, 13:6 (1986),  1195–1200
12. SPONTANEOUS FRONT INGAASP/INP DGS EMITTER (LAMBDA=1.3, MKM) FOR FIBER LIGHT GUIDES WITH THE DIAMETER OF 50 MKM
    
    Zhurnal Tekhnicheskoi Fiziki, 55:4 (1985),  807–809
13. Three-layer waveguide InGaAsP/lnP injection lasers
    
    Kvantovaya Elektronika, 11:3 (1984),  631–633
14. SPATIAL-TIME CHARACTERISTICS OF IRRADIATION OF UNIMODE INJECTION-LASERS
    
    Zhurnal Tekhnicheskoi Fiziki, 53:12 (1983),  2408–2410
15. LOW-THRESHOLD BAND THICK HETEROLASERS BASED ON INGAASP/INP(GAMMA-CONGRUENT-TO-1,3 MKM), OBTAINED BY HYBRID TECHNOLOGY
    
    Zhurnal Tekhnicheskoi Fiziki, 53:7 (1983),  1413–1414
16. Инжекционный лазер видимого диапазона с высокой яркостью
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 9:10 (1983),  590–593
17. Влияние отражающих покрытий на пороговые характеристики инжекционных лазеров
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 9:3 (1983),  137–139
18. Radiative characteristics of injection lasers with short resonators
    
    Kvantovaya Elektronika, 10:2 (1983),  364–370
19. Matching of single-mode optical waveguides to semiconductor lasers
    
    Kvantovaya Elektronika, 9:11 (1982),  2197–2203
20. Temperature dependences of the emission characteristics of GaInPAs/InP injection lasers
    
    Kvantovaya Elektronika, 9:9 (1982),  1902–1904
21. Tunable cw emission in the 1.3/J range from a GaInPAs/InP heterolaser with an external dispersive resonator
    
    Kvantovaya Elektronika, 9:7 (1982),  1504–1506
22. Radiative characteristics of an injection laser with a zigzag mesastripe AlGaAs–GaAs heterostructure
    
    Kvantovaya Elektronika, 8:7 (1981),  1565–1567
23. Electron-beam-pumped semiconductor laser operating at low acceleration voltages
    
    Kvantovaya Elektronika, 8:5 (1981),  1128–1131
24. An integrated GaAs distributed-feedback oscillator–amplifier system
    
    Kvantovaya Elektronika, 8:2 (1981),  250–255
25. Characteristics of a channel injection heterojunction laser
    
    Kvantovaya Elektronika, 8:1 (1981),  193–196