Bogdankevich Oleg Vladimirovich

Publications in Math-Net.Ru

1. Resolving power requirements of laser electron-beam tubes (quantoscopes)
   
   Kvantovaya Elektronika, 25:4 (1998),  381–384
2. Resolving power of laser electron-beam tubes (quantoscopes)
   
   Kvantovaya Elektronika, 23:2 (1996),  161–166
3. Electron-beam-pumped semiconductor lasers
   
   Kvantovaya Elektronika, 21:12 (1994),  1113–1136
4. Limits of validity of models of a homogeneously broadened emission line of a CdS laser
   
   Kvantovaya Elektronika, 17:7 (1990),  887–888
5. Laser effect in PbSSe compounds pumped longitudinally with an electron beam
   
   Kvantovaya Elektronika, 16:10 (1989),  2020–2022
6. Off-axial oscillation modes in longitudinally pumped semiconductor lasers
   
   Kvantovaya Elektronika, 16:9 (1989),  1775–1780
7. Characteristics of the evolution of lasing in electron-beam-pumped semiconductor lasers
   
   Kvantovaya Elektronika, 15:12 (1988),  2504–2507
8. Pulse-periodic operation of a multicomponent semiconductor laser excited by an electron beam
   
   Kvantovaya Elektronika, 15:10 (1988),  2015–2018
9. Variable-gap $Al_xGa_{1-x}As$ heterostructure for an electron-beam-pumped laser
   
   Kvantovaya Elektronika, 14:9 (1987),  1809–1811
10. Inhomogeneous broadening of an emission line of a semiconductor laser
    
    Kvantovaya Elektronika, 14:5 (1987),  1096–1098
11. Pulse-periodic semiconductor laser pumped by an electron beam
    
    Kvantovaya Elektronika, 14:3 (1987),  605–607
12. Dye lasers pumped by radiation from high-power semiconductor lasers
    
    Kvantovaya Elektronika, 14:1 (1987),  218–220
13. Influence of a longitudinal inhomogeneity of the excitation on the output characteristics of semiconductor lasers pumped longitudinally by an electron beam
    
    Kvantovaya Elektronika, 13:12 (1986),  2373–2377
14. Electron-beam and optical strength of semiconductors subjected to pulsed excitation by a high-intensity electron beam
    
    Kvantovaya Elektronika, 13:10 (1986),  2132–2135
15. Pulsive uncooled semiconductive lasers based on zinc-oxide
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:3 (1985),  136–140
16. Pulsed multielement semiconductor laser with an unstable resonator
    
    Kvantovaya Elektronika, 12:7 (1985),  1519–1521
17. Uncooled pulsed cadmium sulfide and gallium arsenide lasers pumped longitudinally by an electron beam
    
    Kvantovaya Elektronika, 12:7 (1985),  1517–1519
18. Lasing threshold and divergence of radiation emitted by semiconductor lasers pumped longitudinally by an electron beam
    
    Kvantovaya Elektronika, 12:4 (1985),  848–851
19. Investigation of the relationships governing the formation of images in a scanning laser microscope
    
    Kvantovaya Elektronika, 11:5 (1984),  998–1003
20. Influence of deep impurity levels on the threshold characteristics of electronbeam-pumped lasers made of $n-Ga_{1-x}Al_xAs$
    
    Kvantovaya Elektronika, 11:4 (1984),  833–835
21. Distribution of the excitation density in electron-beam-pumped semiconductor lasers
    
    Kvantovaya Elektronika, 10:11 (1983),  2236–2246
22. Electron-beam-pumped lasers using heteroepitaxial zinc selenide obtained from organoelemental compounds
    
    Kvantovaya Elektronika, 10:5 (1983),  1007–1009
23. Investigation of the refractive index profiles of multilayer Ga_1–xAl_xAs laser heterostructures
    
    Kvantovaya Elektronika, 10:2 (1983),  426–427
24. Electron-beam-pumped multicomponent semiconductor laser emitting visible radiation
    
    Kvantovaya Elektronika, 9:8 (1982),  1732–1733
25. Transport of a high-intensity electron beam in neutral gases
    
    Kvantovaya Elektronika, 9:2 (1982),  234–247
26. Electron-beam-pumped semiconductor laser operating at low acceleration voltages
    
    Kvantovaya Elektronika, 8:5 (1981),  1128–1131
27. Electron-beam control of the radiation emitted by injection light sources
    
    Kvantovaya Elektronika, 8:5 (1981),  1126–1128
28. Influence of an oxide film on the surfaces of Ga_1–xAl_xAs solid solutions on the threshold current density of an electron-beam-pumped laser
    
    Kvantovaya Elektronika, 8:5 (1981),  1124–1126
29. Influence of doping of Ga_0.68Al_0.32As on its cathodoluminescence and threshold current density of a laser pumped by an electron beam
    
    Kvantovaya Elektronika, 8:1 (1981),  201–204
30. Influence of carrier migration processes on threshold characteristics of semiconductor lasers pumped longitudinally by an electron beam
    
    Kvantovaya Elektronika, 7:7 (1980),  1447–1450
31. Multilayer $GaAs-AlAs$ heterostructure laser pumped transversely by an electron beam
    
    Kvantovaya Elektronika, 7:6 (1980),  1209–1212
32. Scanning optical microscope based on an electron-beampumped semiconductor laser
    
    Kvantovaya Elektronika, 6:7 (1979),  1525–1528
33. Influence of the scanning velocity of an electron beam on the output parameters of a longitudinally pumped semiconductor laser
    
    Kvantovaya Elektronika, 6:4 (1979),  789–796
34. Two-dimensional variable-gap structures in longitudinally pumped semiconductor lasers
    
    Kvantovaya Elektronika, 5:9 (1978),  2035–2038
35. Variable-gap structures in electron-beam-pumped semiconductor lasers
    
    Kvantovaya Elektronika, 5:6 (1978),  1310–1317
36. Electron-beam-pumped ZnSe-ZnS heterolaser
    
    Kvantovaya Elektronika, 3:3 (1976),  612–614
37. Continuous tuning of the emission frequency of electronbeam- pumped lasers
    
    Kvantovaya Elektronika, 2:10 (1975),  2231–2237
38. Influence of amplified spontaneous radiation on parameters of a longitudinally pumped laser
    
    Kvantovaya Elektronika, 2:8 (1975),  1757–1762
39. Longitudinal mode selection in a resonator with a periodic permittivity distribution
    
    Kvantovaya Elektronika, 2:7 (1975),  1459–1464
40. High-power multielement longitudinally pumped semiconductor laser
    
    Kvantovaya Elektronika, 2:6 (1975),  1335–1336
41. Formation of a television image on a large screen with the aid of a laser electron-beam tube
    
    Kvantovaya Elektronika, 1:11 (1974),  2521–2523
42. Dynamics of emission from a semiconductor laser excited longitudinally by an electron beam
    
    Kvantovaya Elektronika, 1:5 (1974),  1266–1267
43. Forced locking of longitudinal modes in an electron-beam-pumped semiconductor laser
    
    Kvantovaya Elektronika, 1:5 (1974),  1264–1265
44. Influence of the excitation inhomogeneity on the threshold of electron-beam-pumped lasers
    
    Kvantovaya Elektronika, 1:2 (1974),  357–364
45. Investigation of the dynamics of emission from a "radiating mirror" semiconductor laser with an external resonator
    
    Kvantovaya Elektronika, 1:1 (1974),  149–151
46. Construction and some potential applications of electron-beam-excited semiconductor lasers (review)
    
    Kvantovaya Elektronika, 1973, no. 6(18),  5–22
47. Divergence of the output radiation of electron-beam-pumped "radiating mirror" lasers
    
    Kvantovaya Elektronika, 1972, no. 6(12),  110–111
48. Kinetics of recovery of luminescence properties of gallium arsenide single crystals irradiated with high-energy electrons
    
    Kvantovaya Elektronika, 1972, no. 5(11),  108–111
49. Waveguide resonator structure of an electron-beam-pumped semiconductor laser
    
    Kvantovaya Elektronika, 1972, no. 2(8),  61–68
50. Cadmium sulfide single crystals suitable for electron-beam-pumped lasers
    
    Kvantovaya Elektronika, 1972, no. 7,  44–47
51. Waveguide structure of a resonator in electron-beam pumped laser
    
    Dokl. Akad. Nauk SSSR, 201:6 (1971),  1316–1318
52. Multielement semiconductor laser of the "emitting mirror" type
    
    Kvantovaya Elektronika, 1971, no. 5,  95–96
53. Pumping of a semiconductor laser by an electron beam modulated at a microwave frequency
    
    Kvantovaya Elektronika, 1971, no. 4,  97–99
54. Characteristics of a gallium arsenide laser pumped by a high-energy electron beam
    
    Kvantovaya Elektronika, 1971, no. 3,  29–33
55. Electron-beam-pumped high-power semiconductor laser
    
    Kvantovaya Elektronika, 1971, no. 2,  92–93
56. Semiconducting quantum generator on gallium arsenide with a plane cavity
    
    Dokl. Akad. Nauk SSSR, 168:6 (1966),  1283–1286
57. Radiation in a single $\mathrm{GaSe}$ crystal induced through excitation with fast electrons
    
    Dokl. Akad. Nauk SSSR, 161:5 (1965),  1059
58. The excitation of a semiconducting quantum generator by a bundle of fast electrons
    
    Dokl. Akad. Nauk SSSR, 155:4 (1964),  783