Kryukova Irina Vasil'evna

Publications in Math-Net.Ru

1. Overheating of an electron–hole plasma in an active element of an externally pumped semiconductor laser
   
   Kvantovaya Elektronika, 17:7 (1990),  872–876
2. Pulse-periodic operation of a multicomponent semiconductor laser excited by an electron beam
   
   Kvantovaya Elektronika, 15:10 (1988),  2015–2018
3. Passive switch with a mixture of saturable absorbers for mode locking in solid-state lasers
   
   Kvantovaya Elektronika, 14:4 (1987),  813–815
4. Pulse-periodic semiconductor laser pumped by an electron beam
   
   Kvantovaya Elektronika, 14:3 (1987),  605–607
5. Dye lasers pumped by radiation from high-power semiconductor lasers
   
   Kvantovaya Elektronika, 14:1 (1987),  218–220
6. Investigation of the degradation of sealed electron-beam-pumped semiconductor lasers
   
   Kvantovaya Elektronika, 13:12 (1986),  2529–2531
7. Electron-beam and optical strength of semiconductors subjected to pulsed excitation by a high-intensity electron beam
   
   Kvantovaya Elektronika, 13:10 (1986),  2132–2135
8. Pulsive uncooled semiconductive lasers based on zinc-oxide
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:3 (1985),  136–140
9. Pulsed multielement semiconductor laser with an unstable resonator
   
   Kvantovaya Elektronika, 12:7 (1985),  1519–1521
10. Uncooled pulsed cadmium sulfide and gallium arsenide lasers pumped longitudinally by an electron beam
    
    Kvantovaya Elektronika, 12:7 (1985),  1517–1519
11. Spectral and time dependences of the radiation emitted by cadmium sulfide crystals
    
    Kvantovaya Elektronika, 8:8 (1981),  1790–1796
12. Tunable $Ga_xIn_{1-x}As_ySb_{1-y}$ quaternary semiconductor laser
    
    Kvantovaya Elektronika, 7:3 (1980),  644–646
13. Efficient generation of an electron–hole plasma in electronbeam excited GaAs
    
    Kvantovaya Elektronika, 6:11 (1979),  2425–2428
14. Spectral and temporal characteristics of emission from degenerate electron–hole plasma in GaAs and CdS at 300°K
    
    Kvantovaya Elektronika, 6:7 (1979),  1507–1512
15. Mechanisms of laser action in epitaxial InAs subjected to electron beam excitation
    
    Kvantovaya Elektronika, 6:7 (1979),  1401–1408
16. Degradation of uncooled electron-pumped gallium arsenide lasers
    
    Kvantovaya Elektronika, 6:5 (1979),  1109–1111
17. Efficient room-temperature stimulated emission from a Ga_xln_1–xAs_ySb_1–y semiconductor laser in the spectral range 1.8–2.4 μ
    
    Kvantovaya Elektronika, 5:1 (1978),  126–128
18. Spontaneous and stimulated emission from Ga_xIn_1–xAs, GaAs_xSb_1–x, and Ga_xIn_1–xAs_1–yP_y solid solutions
    
    Kvantovaya Elektronika, 3:11 (1976),  2490–2494
19. Investigation of degradation of electron-beam-pumped cadmium sulfide lasers
    
    Kvantovaya Elektronika, 3:11 (1976),  2475–2477
20. Electron-beam-pumped InAs and Pb_xSn_1–xSe semiconductor lasers
    
    Kvantovaya Elektronika, 3:10 (1976),  2302–2303
21. Spectral and power characteristics of electron-beam-excited gallium antimonide lasers
    
    Kvantovaya Elektronika, 3:10 (1976),  2205–2214
22. Electron-beam-excited stimulated emission from InAs
    
    Kvantovaya Elektronika, 3:7 (1976),  1601–1605
23. Luminescence and stimulated emission from Ga_xln_1–xAs_ySb_1–y
    
    Kvantovaya Elektronika, 3:4 (1976),  932–934
24. Self-damage in electron-beam-pumped gallium arsenide lasers
    
    Kvantovaya Elektronika, 2:9 (1975),  1969–1977
25. Influence of imperfections in the crystal structure of gallium arsenide on the parameters of electron-beam excited lasers
    
    Kvantovaya Elektronika, 2:5 (1975),  1058–1062
26. Electron-beam-pumped Al_xGa_1–xSb semiconductor laser
    
    Kvantovaya Elektronika, 2:1 (1975),  68–72
27. Investigation of the photoluminescence and parameters of laser radiation generated by electron excitation of Al$_x$Ga$_{1-x}$As solid solutions
    
    Kvantovaya Elektronika, 1:12 (1974),  2602–2607
28. Influence of structure defects on the radiative recombination in gallium arsenide crystals
    
    Kvantovaya Elektronika, 1:3 (1974),  673–675
29. Parameters of electron-beam-pumped Al_xGa_1–xAs lasers in the visible part of the spectrum
    
    Kvantovaya Elektronika, 1:1 (1974),  178–180
30. KGS-3: An electron-beam-pumped gallium antimonide laser
    
    Kvantovaya Elektronika, 1:1 (1974),  114–118
31. Kinetics of recovery of luminescence properties of gallium arsenide single crystals irradiated with high-energy electrons
    
    Kvantovaya Elektronika, 1972, no. 5(11),  108–111
32. Electron-beam tube with a semiconductor target. An electron-beam-pumped scanning laser
    
    Kvantovaya Elektronika, 1972, no. 3(9),  110–112
33. KGP-2: An electron-beam-pumped cadmium sulfide laser
    
    Kvantovaya Elektronika, 1972, no. 3(9),  99–101
34. Characteristics of a gallium arsenide laser pumped by a high-energy electron beam
    
    Kvantovaya Elektronika, 1971, no. 3,  29–33