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Garbuzov Dmitry Zalmanovich

Publications in Math-Net.Ru

  1. Совершенствование процесса заращивания и получение одномодовых зарощенных InGaAsP/InP-лазеров ($\lambda=1.3$ мкм) с мощностью излучения 160 мВт

    Fizika i Tekhnika Poluprovodnikov, 25:8 (1991),  1414–1418
  2. GROWN SINGLE-MODE CONTINUOUS INGAASP/INP SEPARATE CONFINEMENT LASERS WITH (LAMBDA = 1.3 MU-M)

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 17:6 (1991),  17–21
  3. Direct amplitude modulation of the radiation emitted by (InGa)AsP/InP double-heterostructure lasers (λ = 1.3 μm) with separate confinement

    Kvantovaya Elektronika, 18:3 (1991),  281–286
  4. OPTICAL MODULE BASED ON QUANTUM-DIMENTIONAL INGAASP-INP LASER OF (LAMBDA=1.3 MU-M) WATT RANGE

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 16:21 (1990),  35–41
  5. DEPENDENCE OF THRESHOLD CURRENT-DENSITY AND DIFFERENTIAL QUANTUM EFFICIENCY OF SEPARATE CONFINEMENT DHS INGAASP/INP (LAMBDA=1,3MU-M) LASERS ON OUTLET LOSSES

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 16:9 (1990),  50–54
  6. Possibility of increasing the maximum radiation intensity in heterolasers with a wide waveguide

    Kvantovaya Elektronika, 17:11 (1990),  1411–1414
  7. Distribution and spatial coherence of radiation fields of InGaAsP/lnP double-heterostructure separate-confinement lasers emitting at λ = 1.3 μm

    Kvantovaya Elektronika, 17:1 (1990),  14–16
  8. OPTICAL REVERSIVE REGISTRATION OF INFORMATION ON VO2 FILMS

    Zhurnal Tekhnicheskoi Fiziki, 59:10 (1989),  174–177
  9. EFFECT OF INNER FLOWS IN ALLOY DURING THE EPITAXIAL LAYER GROWTH, ON THE MOVING SUBLAYER

    Zhurnal Tekhnicheskoi Fiziki, 59:1 (1989),  92–97
  10. FORMATION OF HIGH-FREQUENCY TRAIN OF PICOSECOND OPTICAL PULSES AT 1.32-MU-M WAVE-LENGTH

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 15:24 (1989),  64–68
  11. DOUBLE PUMPING OF INGAASP/GAAS-BASED YAG-LASERS (P1.06=320 MV, EFFICIENCY-12-PERCENT)

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 15:24 (1989),  15–21
  12. SOURCE OF PICOSECOND PULSES FOR HIGH-SPEED SOLITON SYSTEM OF INFORMATION-TRANSFER

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 15:9 (1989),  25–29
  13. OXIDE-BAND AND OVERGROWN ALGAAS/GAAS QUANTUM-DIMENSIONAL LASERS, MANUFACTURED BY THE MOC-HYDRIDE EPITAXY METHOD

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 15:1 (1989),  20–25
  14. Garnet chip laser pumped by an InGaAsP/GaAs laser

    Kvantovaya Elektronika, 16:12 (1989),  2423–2425
  15. Квантово-размерные лазерные AlGaAs/GaAs-гетероструктуры, полученные МОС гидридным методом. Квантовый выход люминесценции и пороги генерации

    Fizika i Tekhnika Poluprovodnikov, 22:12 (1988),  2111–2117
  16. Квантово-размерные AlGaAs/GaAs-гетероструктуры со 100%-м квантовым выходом излучательной рекомбинации, полученные методом молекулярно-пучковой эпитаксии

    Fizika i Tekhnika Poluprovodnikov, 22:12 (1988),  2105–2110
  17. Влияние насыщения усиления на пороговые характеристики квантово-размерных InGaAsP/GaAs-гетеролазеров

    Fizika i Tekhnika Poluprovodnikov, 22:6 (1988),  1035–1039
  18. Квантово-размерные InGaAsP/GaAs (${\lambda=0.86\div0.78}$ мкм) лазеры раздельного ограничения (${J_{\text{п}}=100\,\text{А/см}^{2}}$, КПД${}=59$%)

    Fizika i Tekhnika Poluprovodnikov, 22:6 (1988),  1031–1034
  19. Оже-рекомбинация и разогрев носителей при высоком уровне фотовозбуждения квантово-размерных гетероструктур InGaAsP/InP (${\lambda=1.3}$ мкм) и InGaAsP/GaAs (${\lambda=0.85}$ мкм)

    Fizika i Tekhnika Poluprovodnikov, 22:4 (1988),  657–663
  20. BISTABLE REGIME OF GENERATION OF QUANTUM-DIMENSIONAL INGAASP/INP-LASERS WITH EXTERNAL DISPERSION RESONATOR

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:23 (1988),  2128–2132
  21. CURRENT RETUNING CHARACTERISTICS OF INGAASP/INP HETEROLASERS WITH AN EXTERNAL DISPERSION RESONATOR

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:23 (1988),  2116–2120
  22. POWER CONTINUOUS INGAASP/GAAS HETEROLASER WITH THE DIELECTRIC MIRROR (IPOR=100A/CM2,D=1.1WATT,EFFICIENCY=66-PERCENT,T=10-DEGREES-C

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:8 (1988),  699–702
  23. MULTI-LAYERED STRUCTURES IN THE JN-GA-AS-P SYSTEM PREPARED BY THE LIQUID EPITAXY METHOD

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:7 (1988),  593–597
  24. MS INGAASP/INP (LAMBDA=1.3-MU-M) QUANTUM DIMENSIONAL SEPARATE CONFINEMENT LASERS (JPOR=380A/CM2,P=0.5 BT, T=18-DEGREES-C)

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:3 (1988),  241–246
  25. OVERGROWN CONTINUOUS INGAASP-INP (LAMBDA=1,3-MU-M) SEPARATE CONFINEMENT LASERS (J=360A-CM2,P=360-MVT,T=18-DEGREES-C)

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:2 (1988),  99–104
  26. STUDY OF THE DURABILITY OF CONTINUOUS INGAASP/INP (LAMBDA=1.3 MU-M) MS SEPARATE CONFINEMENT LASERS

    Zhurnal Tekhnicheskoi Fiziki, 57:9 (1987),  1822–1824
  27. Low-Threshold Quantum-Dimensional InGaAsP/GaAs Double-Heterostructure Lasers of Separate Limitation Produced by Liquid Epitaxy (${\lambda=0.86}$ $\mu m$, ${I_{\text{п}}=90\,\text{A/cm}^{2}}$, ${L=\infty}$; ${I_{\text{п}}=165\,\text{A/cm}^{2}}$, ${L=1150}$ $\mu m$, ${T=300}$ K)

    Fizika i Tekhnika Poluprovodnikov, 21:8 (1987),  1501–1503
  28. Photoluminescent Studies of InGaAsP/InP Heterostructures with Active Region of $40\div 1000$ ÅThickness

    Fizika i Tekhnika Poluprovodnikov, 21:7 (1987),  1217–1222
  29. Influence of Amplification Saturation and Quantum-Dimensional Effects on Threshold Characteristics of Lasers with Superthin Active Regions

    Fizika i Tekhnika Poluprovodnikov, 21:6 (1987),  1085–1094
  30. Quantum-Dimensional InGaAsP/InP Double-Heterostructure Lasers of Separate Limitation with ${\lambda=1.3}$ $\mu m$ (${J_{\text{п}}=410\,\text{А/cm}^{2}}$, ${T=23^{\circ}}$С)

    Fizika i Tekhnika Poluprovodnikov, 21:5 (1987),  824–829
  31. Quantum-Dimensional Effects in Luminescence Spectra of Liquid-Phase InGaAsP/InP Heterostructures with Active Region of 230$-$60 ÅThickness

    Fizika i Tekhnika Poluprovodnikov, 21:3 (1987),  437–441
  32. Quantum-Dimensional Effects in Liquid-Phase InGaAsP/GaAs Heterostructures with Active-Ran Thickness between 40 and 300 Å

    Fizika i Tekhnika Poluprovodnikov, 21:1 (1987),  178–181
  33. Quantum-Dimensional InGaAsP/GaAs Separate-Limitation Double-Heterostructure Lasers Produced by Liquid-Epitaxy Method (${\lambda=0.79}\,\mu m,$ ${I_{\text{п}}=124\,\text{A/cm}^{2}}$, ${T=300}$ K)

    Fizika i Tekhnika Poluprovodnikov, 21:1 (1987),  162–164
  34. Continuous $In\,Ga\,As\,P/In\,P$ ($\lambda=1.3$ mu-m) separate confinement lasers of 270 mVt ($T=20^{\circ}$ C, $I=900$ mA, exterior dielectric mirror)

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:9 (1987),  552–557
  35. Power separate confinement $In\,Ga\,As\,P/In\,P$-based lasers for FOCD ($\lambda=1,55$ mu-m, $T=300$ K, $P=50$ mVt)

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:9 (1987),  535–537
  36. Visible $In\,Ga\,As\,P/Ga\,As\,P$ separate confinement lasers, manufactured by the liquid epitaxy-method ($\lambda=0.65\div0.67$ mu-m, $I_n=3\div0.8\,\text{kA}/\text{cm}^{2}$; $P=5$ mVt, $\lambda=0.665$ mu-m, $T=300$ K)

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:6 (1987),  372–374
  37. X-Ray Photoemission Studies of Liquid-Phase InGaAsP Heterostructures with Transient-Layer Extent of ${\leqslant20}$ Å

    Fizika i Tekhnika Poluprovodnikov, 20:12 (1986),  2206–2211
  38. Photoluminescence of InGaAsP/GaAs Quantum-Dimensional Heterostructures Produced by the Method of Liquid Epitaxy

    Fizika i Tekhnika Poluprovodnikov, 20:12 (1986),  2145–2149
  39. Lifetimes of Eigen Radiative Transitions in Quantum-Dimensional Heterostructures

    Fizika i Tekhnika Poluprovodnikov, 20:10 (1986),  1816–1822
  40. Luminescence Efficiency and Boundary-Recombination Rate in Heteroslructures in Al$-$Ga$-$As and In$-$Ga$-$As$-$P

    Fizika i Tekhnika Poluprovodnikov, 20:4 (1986),  708–712
  41. Continuous intrastrip $In\,Ga\,As\,P/In\,P$ SL DH-lasers with $\lambda=1.3$-mu-m – reduction of thresholds and the capacity increase

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:11 (1986),  660–663
  42. Formation of transition layers in heterostructures based on $Ga\,As-Al\,As$ solid-solutions during the liquid-phase epitaxy

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:6 (1986),  335–341
  43. Low-threshold in $In\,Ga\,As\,P/In\,P$ lasers of divided limitation with $\lambda=1.3$-mu-m and $\lambda =1.55$-mu-m ($I_{\text{threshold}}=600-700\,\text{A/cm}^{2}$)

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:4 (1986),  210–215
  44. SPONTANEOUS FRONT INGAASP/INP DGS EMITTER (LAMBDA=1.3, MKM) FOR FIBER LIGHT GUIDES WITH THE DIAMETER OF 50 MKM

    Zhurnal Tekhnicheskoi Fiziki, 55:4 (1985),  807–809
  45. Special Features of Temperature Dependence of Thresholds in InGaAsP/InP DH Lasers (${\lambda=1.3}\, \mu m$) with Separate Limitation and Thin Active Region

    Fizika i Tekhnika Poluprovodnikov, 19:8 (1985),  1496–1498
  46. Special Features of Threshold Characteristics of InGaAsP/InP DH Lasers (${\lambda=1.3}\,\mu m$) with Separate Limitation and Superthin Active Regions

    Fizika i Tekhnika Poluprovodnikov, 19:8 (1985),  1420–1423
  47. $0.677 \mu m$ – Continuous Injection InGaAsP/GaAsP DH Laser with Selective Limitation Produced by Liquid Epitaxy

    Fizika i Tekhnika Poluprovodnikov, 19:6 (1985),  1115–1118
  48. Auger Profiles of Composition and Luminescent Studies of Liquid-Phase InGaAsP Heterostructures with Active Regions ${(1.5\div5)\cdot10^{-6}}$  cm

    Fizika i Tekhnika Poluprovodnikov, 19:6 (1985),  1108–1114
  49. Injection Continuous 60 mVt Laser Based on Liquid-Phase InGaAsP Double-Heterostructure of Separate Limitation (${\lambda=1.35}\,\mu m$, ${T=300}$ K)

    Fizika i Tekhnika Poluprovodnikov, 19:3 (1985),  456–459
  50. Calculation of Threshold Currents for InGaAsP/InP and InGaAsP/GaAs Double-Heterostructure Lasers with Separate Limitation

    Fizika i Tekhnika Poluprovodnikov, 19:3 (1985),  449–455
  51. Continuous Separately-Limited Laser on InGaAsP/GaAs Double Heterostructures Grown by Liquid Epitay of 77 mWt Power (${T=300}$ K, ${\lambda=0.87}$ $\mu$m)

    Fizika i Tekhnika Poluprovodnikov, 19:1 (1985),  136–138
  52. Separate-confinement $Al\,Ga\,As/Ga\,As$ heterolasers obtained by the modified method of liquid epitaxy ($I_{\text{p}}=260$ A/cm$^{2}$, $\lambda= 0.86-0.83\,\mu m$, $T= 300$ K)

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:23 (1985),  1409–1413
  53. High-power mesastrip PO $In\,Ga\,As/In\,P$ lasers for FOCD ($\lambda=1.3$ mu-m, $t=18^\circ$ C, $i=300$ mA, $p=28$ mVt in the fiber of $50\,\mu m$ diameter

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:22 (1985),  1345–1349
  54. Continuous $In\,Ga\,As\,P/In\,P$ RO DGS laser with $17\%$ ($\lambda=1.32\,\mu m$, $t=290$ K) efficiency

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:19 (1985),  1157–1162
  55. Continuous short-wave ($\lambda=0,677\,\mu m$) injection-laser based on $In\,Ga\,As\,P/Ga\,As\,P$ RO DGS with $10$ mVt power

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:19 (1985),  1153–1157
  56. Band lasers based on PO $In\,Ga\,As\,P/Ga\,As$ DHS ($\lambda\simeq0.87\,\mu m$) with the thin active area

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:4 (1985),  205–209
  57. Инжекционные РО InGaAsP/InP ДГС лазеры с порогом $300\,\text{А/см}^{2}$ (четырехсколотые образцы, ${\lambda=1.25}$ мкм, ${T=300}$ K)

    Fizika i Tekhnika Poluprovodnikov, 18:11 (1984),  2057–2060
  58. Спонтанные и когерентные излучательные переходы в InGaAsP/InP ДГС с тонкой активной областью (${d_{\text{а}}=2\cdot10^{-5}\div2\cdot10^{-6}}$ см), полученные методом жидкостной эпитаксии

    Fizika i Tekhnika Poluprovodnikov, 18:11 (1984),  2041–2045
  59. Низкопороговые инжекционные InGaAsP/GaAs ДГС лазеры с раздельным ограничением, полученные методом жидкостной эпитаксии (${\lambda=0.78\div0.87}$ мкм, ${I_{\text{пор}}=460\,\text{А/см}^{2}}$, ${T=300}$ K)

    Fizika i Tekhnika Poluprovodnikov, 18:9 (1984),  1655–1659
  60. Recombination Processes in InGaAsP/InP Double Heterostructures with ${\lambda= 1\div1.5} \mu m$

    Fizika i Tekhnika Poluprovodnikov, 18:6 (1984),  1069–1076
  61. Review of the Book by L. M. Kogan «Semiconductor Light-Emitting Diodes»

    Fizika i Tekhnika Poluprovodnikov, 18:5 (1984),  964–965
  62. Low-Threshold Visible GalnAsP/GaAsP DH Lasers (${T=300}$ K, ${\lambda=0.70{-}0.66}\,\mu m,$ ${I_{\text{thresh}}\simeq1.5{-}3.2\,\text{кА}/\text{cm}^{2}}$)

    Fizika i Tekhnika Poluprovodnikov, 18:4 (1984),  757–758
  63. Visible Low-Threshold Pulsed and Continuous InGaAsP/InGaP/GaAs DH Lasers in the $0.73{-}0.79 \mu m$ Region (${T=300}$ K, ${I_{n}=3.5{-}1.3\,\text{mA}/\text{cm}^{2}}$)

    Fizika i Tekhnika Poluprovodnikov, 18:1 (1984),  162–165
  64. Luminescent and Threshold Characteristics of InGaAsP/InP Double Heterostructures (${0.94\mu m<\lambda<1.51 \mu m}$) under Optical Excitation

    Fizika i Tekhnika Poluprovodnikov, 18:1 (1984),  102–108
  65. SPONTANEOUS END INGAASP/INP DHS-EMITTERS FOR THE 200 MKM IN DIAMETER FOC (FIBER-OPTICAL COUPLER)

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 10:21 (1984),  1286–1290
  66. LASER TRANSFORMERS OF SHORT-WAVE EMISSION INTO THE INFRARED BASED ON INGAASP/INP DHS (DOUBLE HETEROSTRUCTURE) LASER (LAMBDA=1.0-DIVIDED-BY-1.35MKM,ETA-D=20-PERCENT,T=300-K)

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 10:16 (1984),  1010–1016
  67. FACE SPONTANEOUS EMITTERS BASED ON DHS (DOUBLE HETEROSTRUCTURES) INGAASP(GAMMA-CONGRUENT-TO-1,3MKM) WITH ETA-B-CONGRUENT-TO-6-PERCENT AT 300K

    Zhurnal Tekhnicheskoi Fiziki, 53:7 (1983),  1408–1411
  68. TIME CALCULATIONS OF AUGER-PROCESSES IN P-INGAASP SOLID-SOLUTIONS

    Zhurnal Tekhnicheskoi Fiziki, 53:2 (1983),  315–319
  69. Эффективный перенос возбуждения из эмиттера в активную область при фотолюминесценции InGaAsP/InP ДГС

    Fizika i Tekhnika Poluprovodnikov, 17:12 (1983),  2168–2172
  70. Форма краевой полосы в InGaAsP/InP ДГС (${\tau= 1.3}$ мкм) при низком и высоком уровне фотовозбуждения

    Fizika i Tekhnika Poluprovodnikov, 17:9 (1983),  1652–1655
  71. Излучательные и оже-процессы в фотовозбужденной электронно-дырочной плазме ДГ-InGaAsP/InP-структур (${\lambda=1.3}$ мкм)

    Fizika i Tekhnika Poluprovodnikov, 17:9 (1983),  1557–1563
  72. Сравнение краев поглощения в бинарных и многокомпонентных прямозонных соединениях A$^{\text{III}}$B$^{\text{V}}$ на основе системы InGaAsP

    Fizika i Tekhnika Poluprovodnikov, 17:8 (1983),  1402–1405
  73. Температурная зависимость порога генерации в ДГ-InGaAsP/GaAs-структурах (${\lambda_{\text{ген}}=729}$ нм, ${T\geqslant300}$ K, ${J_{\text{пор}}\geqslant5\cdot10^{3}\,\text{А/см}^{2}}$)

    Fizika i Tekhnika Poluprovodnikov, 17:5 (1983),  843–846
  74. Фотолюминесцентные исследования перераспределения неравновесных носителей заряда в InGaAsP/InP с двумя активными областями

    Fizika i Tekhnika Poluprovodnikov, 17:4 (1983),  714–717
  75. Влияние эффекта насыщения интенсивности люминесценции на пороги генерации ДГ-InGaAsP/InP-лазеров (${\lambda=1.3}$ мкм) при ${T\geqslant300}$ K

    Fizika i Tekhnika Poluprovodnikov, 17:3 (1983),  538–540
  76. Исследование эффекта насыщения интенсивности люминесценции в ДГ-InGaAsP/InP-структурах (${\lambda=1.3}$ мкм) при высоких уровнях возбуждения

    Fizika i Tekhnika Poluprovodnikov, 17:3 (1983),  464–468
  77. Фотолюминесценция двойной гетероструктуры при возбуждении широкозонного эмиттера

    Fizika i Tekhnika Poluprovodnikov, 17:2 (1983),  242–246
  78. Торцевые суперкороткие AlGaAs-излучатели с ${\eta_{e}\approx10}$% (${T=300^{\circ}}$ K)

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 9:15 (1983),  900–906
  79. Model of a YAG:Nd3+ laser with a semiconductor converter in the pump system

    Kvantovaya Elektronika, 3:6 (1976),  1349–1352

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