Vyvenko Oleg Fedorovich

Publications in Math-Net.Ru

1. Ultraviolet cathodoluminescence of ion-induced defects in hexagonal boron nitride
   
   Pis'ma v Zh. Èksper. Teoret. Fiz., 121:1 (2025),  3–9
2. Выращивание кристаллов K$_2$O $\times$ 8Ga$_2$O$_3$ из раствора в расплаве KF и исследование их свойств
   
   Optics and Spectroscopy, 133:11 (2025),  1150–1153
3. Dislocation structure of bulk AlN crystals under indentation
   
   Fizika i Tekhnika Poluprovodnikov, 59:5 (2025),  306–309
4. Complexes of intrinsic point defects in silicon formed as a result of high-energy xenon ion implantation and post-implantation annealing
   
   Fizika i Tekhnika Poluprovodnikov, 59:5 (2025),  298–301
5. The crystallization of $\beta$-Ga$_2$O$_3$ from a solution-melt and the study of the obtained crystals by cathodoluminescence
   
   Fizika i Tekhnika Poluprovodnikov, 58:10 (2024),  548–551
6. Structure and recombination properties of twin boundaries in $\kappa$-phase of gallium oxide
   
   Fizika Tverdogo Tela, 65:12 (2023),  2194–2197
7. Effect of combined ion and electron irradiation on 2 eV luminescence band in hexagonal boron nitride
   
   Zhurnal Tekhnicheskoi Fiziki, 93:7 (2023),  921–927
8. Atomic configuration and charge state of hydrogen at dislocations in silicon
   
   Fizika i Tekhnika Poluprovodnikov, 51:3 (2017),  305–310
9. On the luminescence of freshly introduced $a$-screw dislocations in low-resistance GaN
   
   Fizika i Tekhnika Poluprovodnikov, 49:9 (2015),  1217–1222
10. Orbital quantization in a system of edge Dirac fermions in nanoperforated graphene
    
    Pis'ma v Zh. Èksper. Teoret. Fiz., 98:4 (2013),  242–246
11. The electrically active centers in oxygen-implanted silicon
    
    Fizika i Tekhnika Poluprovodnikov, 47:2 (2013),  251–254
12. Regularities in the formation of dislocation networks on the boundary of bonded Si(001) wafers
    
    Fizika i Tekhnika Poluprovodnikov, 47:2 (2013),  228–232
13. Electron levels and luminescence of dislocation networks formed by the hydrophilic bonding of silicon wafers
    
    Fizika i Tekhnika Poluprovodnikov, 47:2 (2013),  223–227
14. Optimization of cerrelation procedure in the methods of thermostimulated relaxation spectroscopy of semiconductors
    
    Fizika i Tekhnika Poluprovodnikov, 26:10 (1992),  1693–1700
15. Negative photoacoustic effect in glass-like arsenic selenide
    
    Fizika i Tekhnika Poluprovodnikov, 26:9 (1992),  1653–1656
16. Nonlinear percolation conduction in $\mathrm{CdS}$ with dislocations
    
    Fizika Tverdogo Tela, 33:7 (1991),  2020–2030
17. Фотоэлектрические процессы в сульфиде кадмия с изовалентной примесью теллура
    
    Fizika i Tekhnika Poluprovodnikov, 25:10 (1991),  1745–1750
18. Об определении энергии ионизации глубоких уровней из данных DLTS
    
    Fizika i Tekhnika Poluprovodnikov, 24:12 (1990),  2208–2210
19. Двухзарядный метастабильный центр, обусловленный дислокациями в CdS
    
    Fizika i Tekhnika Poluprovodnikov, 24:9 (1990),  1650–1658
20. TREATMENT-STIMULATED TRANSFORMATION OF YBA2CU3OY TETRAGONAL PHASE TO RHOMBIC SUPERCONDUCTING PHASE AT 520-K
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 16:6 (1990),  84–87
21. Метастабильность дефектов, связанных с дислокациями, в сульфиде кадмия
    
    Fizika i Tekhnika Poluprovodnikov, 23:8 (1989),  1521–1524
22. DEFORMATIONS OF CRYSTALLINE CERAMICS LATTICE OF BI-CA-SR-CU-O COMPOSITION UNDER THE HEATING AND THERMOSORPTION OF VOLATILE COMPONENTS
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 15:3 (1989),  23–26
23. Anisotropic conductivity caused by edge prismatic dislocations in $\mathrm{CdS}$
    
    Fizika Tverdogo Tela, 29:3 (1987),  855–857
24. Using Double Optical Excitation in Surface-Photo E. M. F. Spectroscopy
    
    Fizika i Tekhnika Poluprovodnikov, 20:1 (1986),  146–149


25. Ion-beam modification of the local luminescent properties of hexagonal boron nitride
    
    Zhurnal Tekhnicheskoi Fiziki, 92:7 (2022),  1166–1171