Shveikin Vasilii Ivanovich

Publications in Math-Net.Ru

1. New diode lasers with leaking emission in an optical cavity
   
   Kvantovaya Elektronika, 32:8 (2002),  683–688
2. Experimental determination of the factor representing spontaneous emission into a mode of a semiconductor laser operating on a leaky wave
   
   Kvantovaya Elektronika, 27:2 (1999),  131–133
3. Angular distribution of the radiation from quantum-well ‘leaky-wave’ InGaAs/GaAs lasers
   
   Kvantovaya Elektronika, 26:1 (1999),  33–36
4. Efficiency and intensity distribution in a semiconductor laser operating in the ‘leaky’ regime
   
   Kvantovaya Elektronika, 26:1 (1999),  28–32
5. Effects of irradiation on GaAlAs — GaAs and InGaAsP — InP lasers
   
   Kvantovaya Elektronika, 24:9 (1997),  773–775
6. Laser diode module with distributed feedback, single-mode fibre waveguide, and optical isolator
   
   Kvantovaya Elektronika, 22:7 (1995),  653–655
7. Quantum-well InGaAsP\/InP lasers
   
   Kvantovaya Elektronika, 22:2 (1995),  105–107
8. Characteristics of the emission of 805 — 810 nm radiation by linear injection-laser arrays used to pump solid-state lasers
   
   Kvantovaya Elektronika, 22:2 (1995),  101–104
9. Waveguiding properties of heterolasers based on InGaAs/GaAs strained quantum-well structures and characteristics of their gain spectra
   
   Kvantovaya Elektronika, 21:7 (1994),  633–639
10. Spectral investigation of the radiation emitted by strained InGaAs/GaAlAs quantum-well heterostructures
    
    Kvantovaya Elektronika, 21:5 (1994),  405–408
11. Compact neodymium laser with semiconductor-laser pumping and frequency conversion to the fourth harmonic
    
    Kvantovaya Elektronika, 17:2 (1990),  165–166
12. Gallium arsenide electron-beam-pumped laser with a distributed feedback
    
    Kvantovaya Elektronika, 2:9 (1975),  1957–1962
13. Extraction of radiation from an electron-beam-excited semiconductor laser through a diffraction grating
    
    Kvantovaya Elektronika, 2:3 (1975),  621–622
14. Investigation of injection lasers with a wide active region
    
    Kvantovaya Elektronika, 1:5 (1974),  1220–1222
15. Injection laser with an average output power of 200 mW
    
    Kvantovaya Elektronika, 1:1 (1974),  163–164
16. Excitation of TE_n electromagnetic waves with a high transverse index and dependence of the threshold and efficiency of laser diodes on the order of excited mode
    
    Kvantovaya Elektronika, 1:1 (1974),  54–61
17. Some aspects of the degradation of heterojunction lasers
    
    Kvantovaya Elektronika, 1972, no. 3(9),  108–110
18. Internal parameters of injection lasers at 300°K
    
    Kvantovaya Elektronika, 1971, no. 5,  99–101
19. Dependence of the stimulated emission threshold of injection lasers on the duration of pumping current pulses
    
    Kvantovaya Elektronika, 1971, no. 5,  97–99