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Bulaev Petr Valentinovich

Publications in Math-Net.Ru

  1. Influence of features of QW InGaAs/(Al)GaAs heterostructures grown by MOCVD on the emission spectrum of single-mode laser diodes

    Kvantovaya Elektronika, 32:3 (2002),  216–218
  2. High-power semiconductor 0.89 – 1.06-μm lasers with a low emission divergence based on strained quantum-well InGaAs/(Al)GaAs structures

    Kvantovaya Elektronika, 32:3 (2002),  213–215
  3. Continuous-wave 1-W injection lasers emitting near 808 nm with a total efficiency up to 50%

    Kvantovaya Elektronika, 25:4 (1998),  303–304

  4. Errata to the article: Influence of features of QW InGaAs/(Al)GaAs heterostructures grown by MOCVD on the emission spectrum of single-mode laser diodes

    Kvantovaya Elektronika, 32:6 (2002),  564


© Steklov Math. Inst. of RAS, 2026